Display device

Patent metadata

Field	Value
Publication number	US-10453965-B2
Application number	US-201815892513-A
Country	US
Kind code	B2
Filing date	Feb 9, 2018
Priority date	Mar 29, 2017
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

The purpose of the present invention is to realize the TFT of the oxide semiconductor having a superior characteristics and high reliability during the product's life. The structure of the present invention is as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed on the first oxide semiconductor, the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film, a gate electrode is formed on the first aluminum film.

First claim

What is claimed is:

1. A display device comprising:
a substrate including a display area where plural pixels are formed,
the pixel includes a first TFT of a first oxide semiconductor,
a first gate insulating film is formed on the first oxide semiconductor,
the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film,
a gate electrode is formed on the first aluminum film,
wherein an interlayer insulating film is formed covering the first gate insulating film and the first gate electrode,
defect density of the first silicon oxide film is less than defect density of the interlayer insulating film,
the defect density of the first silicon oxide film is 1×1018 (spins/cm3) or less by ESR (Electrode Spin Resonance) analysis.

2. The display device according to claim 1 ,
wherein a desorption of oxygen from the first silicon oxide film in TDS (Thermal Desorption Spectrometry) analysis, provided M/z=32, the desorption of oxygen (O2) is 1×1015 (molecules/cm2) or more at the temperature of 100 to 250 centigrade.

3. The display device according to claim 1 ,
wherein a desorption of N2O from the first silicon oxide film in TDS (Thermal Desorption Spectrometry) analysis, provided M/z=44, the desorption of oxygen (O2) is 8×1013 (molecules/cm2) or less at the temperature of 100 to 400 centigrade.

4. The display device according to claim 1 , wherein the first oxide semiconductor is formed on a second silicon oxide film, defect density of the second silicon oxide film is 1×1018 (spins/cm3) or less by ESR (Electrode Spin Resonance) analysis.

5. The display device according to claim 1 , wherein the first oxide semiconductor is formed on a second aluminum oxide film.

6. The display device according to claim 1 ,
a thickness of the first aluminum oxide film is 1 nm to 20 nm.

7. The display device according to claim 1 ,
the first gate insulating film is formed only under the first gate electrode.

8. The display device according to claim 1 ,
the first oxide semiconductor has a drain area that connects with the drain electrode, and a source electrode that connects with the source electrode,
a first protective layer of metal or alloy is formed between the drain area and the drain electrode, and
a second protective layer of metal or alloy is formed between the source area and the source electrode.

9. The display device according to claim 8 ,
the first protective layer and the second protective layer are formed by the same material as a video signal line.

10. The display device according to claim 1 ,
a second gate insulating film including a third silicon oxide film,
a second gate electrode is formed under the second gate insulating film,
the first oxide semiconductor film is formed on the third silicon oxide film.

11. The display device according to claim 10 ,
the second gate insulating film is a laminated film of the third silicon oxide film and a third aluminum oxide film,
the second gate electrode contacts with the third aluminum oxide film.

12. The display device according to claim 10 ,
the second gate electrode is formed by a laminated film of a metal and a third oxide semiconductor film,
the third oxide semiconductor film contacts with the second gate insulating film.

13. The display device according to claim 10 ,
the first oxide semiconductor has a drain area that connects with the drain electrode, and a source electrode that connects with the source electrode,
a first protective layer of metal or alloy is formed between the drain area and the drain electrode, and
a second protective layer of metal or alloy is formed between the source area and the source electrode.

14. The display device according to claim 13 ,
the substrate has a second TFT of a poly-silicon,
a distance between the poly-silicon and the substrate is shorter than a distance between the second gate electrode and the substrate.

15. The display device according to claim 10 ,
the substrate has a second TFT of a poly-silicon,
a distance between the poly-silicon and the substrate is shorter than a distance between the second gate electrode and the substrate.

16. A display device comprising:
a substrate including a display area where plural pixels are formed,
the pixel includes a first TFT of a first oxide semiconductor,
a first gate insulating film is formed on the first oxide semiconductor,
the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film,
a gate electrode is formed on the first aluminum film,
wherein the first gate electrode is formed by a laminated film that a second oxide semiconductor is laminated by a metal, and
wherein a thickness of the second oxide semiconductor is smaller than a thickness of the first oxide semiconductor.

17. A display device comprising:
a substrate including a display area where plural pixels are formed,
the pixel includes a first TFT of a first oxide semiconductor,
a first gate insulating film is formed on the first oxide semiconductor,
the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film,
a gate electrode is formed on the first aluminum film,
wherein the substrate has a second TFT of a poly-silicon,
a distance between the poly-silicon and the substrate is shorter than a distance between the first oxide semiconductor and the substrate.

18. The display device according to claim 17 ,
wherein the first oxide semiconductor has a drain area that connects with the drain electrode, and a source electrode that connects with the source electrode,
a first protective layer of metal or alloy is formed between the drain area and the drain electrode
a second protective layer of metal or alloy is formed between the source area and the source electrode, and
the substrate has a second TFT of a poly-silicon,
a distance between the poly-silicon and the substrate is shorter than a distance between the first oxide semiconductor and the substrate.

Assignees

• Japan Display Inc

Inventors

• Yamaguchi Yohei
• Suzumura Isao

Classifications

• G02F2202/104

  poly-Si · CPC title

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• G02F1/136286

  Wiring, e.g. gate line, drain line · CPC title

• G02F2202/10

  semiconductor · CPC title

• H01L27/124

  Electricity · mapped topic