Resistance alloy for use in shunt resistor, use of resistance alloy in shunt resistor, and shunt resistor using resistance alloy

Patent metadata

Field	Value
Publication number	US-12435391-B2
Application number	US-202118019755-A
Country	US
Kind code	B2
Filing date	May 20, 2021
Priority date	Aug 7, 2020
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

Provided is a resistance alloy enabling a decrease in the TCR of a shunt resistor for use in a current detection device capable of detecting large currents. A copper-manganese based resistance alloy for use in a shunt resistor further comprises tin and nickel and has a TCR less than or equal to −36×10 −6 /K at 100° C. with reference to 25° C.

First claim

The invention claimed is:

1. A copper-manganese based resistance alloy for use in a shunt resistor, the resistance alloy comprising 9.5 to 12.5 mass % of manganese, 2.5 to 5 mass % of tin, 1 to 3 mass % of nickel, and a balance of the resistance alloy being copper,
wherein the resistance alloy has a TCR less than or equal to −36×10 −6 /K at 100° C. with reference to 25° C.

2. A copper-manganese based resistance alloy for use in a shunt resistor, the resistance alloy comprising 9.5 to 12.5 mass % of manganese, 2.5 to 5 mass % of tin, 1 to 3 mass % of nickel, and a balance of the resistance alloy being copper,
wherein the resistance alloy has a TCR less than or equal to −10×10 −6 /K in a range of 0° C. to 175° C. with reference to 25° C.

3. Use of the resistance alloy according to any one of claims 1 to 2 in a resistive body of a shunt resistor for use in a current detection device.

4. A shunt resistor comprising a resistive body and an electrode,
wherein the resistive body is formed of a copper-manganese based resistance alloy, the resistance alloy comprising 9.5 to 12.5 mass % of manganese, 2.5 to 5 mass % of tin, 1 to 3 mass % of nickel, and a balance of the resistance alloy being copper, and having a TCR of less than or equal to −36×10 −6 /K at 100° C. with reference to 25° C.

5. A shunt resistor comprising a resistive body and an electrode,
wherein the resistive body is formed of a copper-manganese based resistance alloy, the resistance alloy comprising 9.5 to 12.5 mass % of manganese, 2.5 to 5 mass % of tin, 1 to 3 mass % of nickel, and a balance of the resistance alloy being copper, and having a TCR of less than or equal to −10×10 −6 /K in a range of 0° C. to 175° C. with reference to 25° C.

Assignees

• Koa Corp

Inventors

• KANAUCHI Naoki
• Kumeda Yoshitaka
• Yoshioka Tadahiko

Classifications

• H01C7/00

  Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material (consisting of loose powdered or granular material H01C8/00; resistors having potential barriers, e.g. field-effect resistors, H10D1/40 - H10D1/43, H10K10/10; semiconductor devices sensitive to electromagnetic or corpuscular radiation, e.g. photoresistors, H10F30/00; magnetic field controlled resistors H10N50/10; bulk negative resistance effect devices H10N80/00) · CPC title

• H01C1/14

  Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors · CPC title

• H01C7/06

  including means to minimise changes in resistance with changes in temperature · CPC title

• H01C13/00

  Resistors not provided for elsewhere · CPC title

• C22C9/05 Primary

  with manganese as the next major constituent · CPC title