Short-wavelength spin wave transducer

US12431602B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12431602-B2
Application numberUS-202318185756-A
CountryUS
Kind codeB2
Filing dateMar 17, 2023
Priority dateMar 17, 2022
Publication dateSep 30, 2025
Grant dateSep 30, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A device that produces spin waves includes a base substrate, a transducer that includes a first plane defined by a first magnetic film and a second plane defined by a plurality of metal strips, and a second magnetic film having a spin-wave phase velocity lower than the first magnetic film. The second magnetic film is adjacent to the first magnetic film, and the first plane and the second plane are parallel. The plurality of metal strips are configured to receive a first signal, such that the first signal excites a first spin wave in the first magnetic film. The second magnetic film is configured to produce a second spin wave having a wavelength shorter than the first spin wave.

First claim

Opening claim text (preview).

What is claimed is: 1. A device that produces ultra-small-wavelength spin waves, comprising: a base substrate; a transducer, comprising: a first plane defined by a first magnetic film; and a second plane defined by a plurality of metal strips; and a second magnetic film, having a spin-wave phase velocity lower than the first magnetic film, wherein the second magnetic film is adjacent to the first magnetic film, wherein the first plane and the second plane are parallel, the plurality of metal strips are configured to receive a first signal, such that the first signal excites a first spin wave in the first magnetic film, and the second magnetic film is configured to produce a second spin wave having a wavelength shorter than the first spin wave. 2. The device of claim 1 , wherein the transducer comprises a third plane defined by an insulator. 3. The device of claim 2 , wherein the insulator is silicon dioxide. 4. The device of claim 1 , wherein the first signal is a radio-frequency electrical signal. 5. The device of claim 4 , wherein the radio-frequency electrical signal is 0.7 GHz to 150 GHz. 6. The device of claim 1 , wherein the base substrate is gadolinium gallium garnet. 7. The device of claim 1 , wherein the first magnetic film is Supermalloy film. 8. The device of claim 1 , wherein the second magnetic film is yttrium iron garnet. 9. The device of claim 1 , wherein the plurality of metal strips comprises three parallel metal strips. 10. The device of claim 9 , wherein each of the three metal strips are separated from another of the three metal strips by a distance of 30 nm to 10 mm. 11. The device of claim 9 , wherein the three metal strips have a width between 30 nm to 10 mm. 12. The device of claim 9 , wherein the three metal strips are electrical conductors. 13. A device that produces ultra-small-wavelength spin waves, comprising: a base substrate; a transducer, comprising: a first plane defined by a first magnetic film; a second plane defined by an insulator; and a third plane defined by a plurality of metal strips; and a second magnetic film, having a spin-wave phase velocity lower than the first magnetic film, wherein the second magnetic film is adjacent to the first magnetic film, wherein: the first plane, the second plane, and the third plane are parallel, such that the third plane abuts the second plane, the second plane abuts the first plane, and the first plane abuts the base substrate, the plurality of metal strips are configured to receive a first signal, such that the first signal excites a first spin wave in the first magnetic film, and the second magnetic film is configured to produce a second spin wave having a wavelength shorter than the first spin wave. 14. The device of claim 13 , wherein the second magnetic film is yttrium iron garnet. 15. A method to produce ultra-small-wavelength spin waves, comprising: placing a transducer on a base substrate, the transducer comprising: a first plane defined by a first magnetic film; and a second plane defined by a plurality of metal strips; and placing a second magnetic film on the base substrate, the second magnetic film having a spin-wave phase velocity lower than the first magnetic film, wherein the second magnetic film is adjacent to the first magnetic film, wherein the first plane and the second plane are parallel, the plurality of metal strips are configured to receive a first signal, such that the first signal excites a first spin wave in the first magnetic film, and the second magnetic film is configured to produce a second spin wave having a wavelength shorter than the first spin wave. 16. The method of claim 15 , wherein the transducer comprises a third plane defined by an insulator. 17. The method of claim 16 , wherein the insulator is silicon dioxide. 18. The method of claim 15 , wherein the first signal is a radio-frequency electrical signal. 19. The method of claim 18 , wherein the radio-frequency electrical signal has a frequency of between 0.7 GHz to 150 GHz. 20. The method of claim 15 , wherein the plurality of metal strips comprises three parallel metal strips.

Assignees

Inventors

Classifications

  • Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates H01F41/302)} · CPC title

  • Garnets {(in general H01F1/346; multilayers, e.g. superlattices H01F10/3209; applying magnetic garnet films to substrates by sputtering H01F41/186)} · CPC title

  • H01P1/218Primary

    the ferromagnetic material acting as a frequency selective coupling element, e.g. YIG-filters · CPC title

  • Exchange coupling of garnet multilayers · CPC title

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What does patent US12431602B2 cover?
A device that produces spin waves includes a base substrate, a transducer that includes a first plane defined by a first magnetic film and a second plane defined by a plurality of metal strips, and a second magnetic film having a spin-wave phase velocity lower than the first magnetic film. The second magnetic film is adjacent to the first magnetic film, and the first plane and the second plane …
Who is the assignee on this patent?
Univ Notre Dame Du Lac
What technology area does this patent fall under?
Primary CPC classification H01P1/218. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 30 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).