High energy implanter with small footprint

Patent metadata

Field	Value
Publication number	US-12431332-B2
Application number	US-202318474402-A
Country	US
Kind code	B2
Filing date	Sep 26, 2023
Priority date	Sep 26, 2023
Publication date	Sep 30, 2025
Grant date	Sep 30, 2025

Abstract

A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.

First claim

What is claimed is:

1. A high-energy ion implantation system comprising:
an ion source configured to form an ion beam along a beam path;
a mass analyzer configured to mass analyze the ion beam along the beam path;
a first linear accelerator configured to receive the ion beam at a first accelerator entrance thereof from the mass analyzer and to accelerate the ion beam to a first accelerator exit along the beam path;
a second linear accelerator configured to receive the ion beam at a second accelerator entrance thereof and to accelerate the ion beam to a second accelerator exit along the beam path;
a first magnet disposed between the first accelerator exit and the second accelerator entrance along the beam path, wherein the first magnet is configured to alter a trajectory of the beam path by greater than 90° along a first plane;
a beam shaping apparatus having a beam shaping entrance and a beam shaping exit along the beam path, wherein the beam shaping apparatus is configured to define a shape of the ion beam along the beam path; and
a second magnet disposed between the second accelerator exit and the beam shaping entrance along the beam path, wherein the second magnet is configured to alter the trajectory of the beam path by greater than 90° along a second plane, wherein the first plane and the second plane are not coplanar.

2. The high-energy ion implantation system of claim 1 , further comprising:
a third linear accelerator configured to receive the ion beam at a third accelerator entrance thereof from the second magnet and to accelerate the ion beam to a third accelerator exit along the beam path; and
a third magnet disposed between the third accelerator exit and the beam shaping entrance along the beam path, wherein the third magnet is configured to alter the trajectory of the beam path by greater than 90° along a third plane, wherein the third plane and the second plane are not co-planar.

3. The high-energy ion implantation system of claim 2 , wherein the first plane and the third plane are approximately parallel.

4. The high-energy ion implantation system of claim 2 , wherein the first magnet is configured to maximize a first energy spectrum of the ion beam passing between the first accelerator exit and the second accelerator entrance, wherein the second magnet is configured to maximize a second energy spectrum of the ion beam passing between the second accelerator exit and the third accelerator entrance, and wherein the third magnet is configured to maximize a third energy spectrum of the ion beam passing between the second accelerator exit and the beam shaping entrance.

5. The high-energy ion implantation system of claim 2 , wherein the first linear accelerator, the first magnet, and the second linear accelerator generally define a first U-shape of the beam path, wherein the second linear accelerator, the second magnet, and the third linear accelerator generally define a second U-shape of the beam path, and wherein the third linear accelerator, the third magnet, and the beam shaping apparatus generally define a third U-shape of the beam path.

6. The high-energy ion implantation system of claim 2 , wherein the first linear accelerator, the second linear accelerator, and the third linear accelerator comprise respective first, second, and third RF acceleration stages of an RF linear accelerator comprising a plurality of RF resonators configured to generate an accelerating RF field.

7. The high-energy ion implantation system of claim 1 , wherein the first linear accelerator, the first magnet, and the second linear accelerator generally define a first U-shape of the beam path, and wherein the second linear accelerator, the second magnet, and the beam shaping apparatus generally define a second U-shape of the beam path.

8. The high-energy ion implantation system of claim 1 , wherein the first linear accelerator and the second linear accelerator comprise respective first and second RF acceleration stages of an RF linear accelerator.

9. The high-energy ion implantation system of claim 1 , wherein the first magnet is configured to maximize a first energy spectrum of the ion beam passing between the first accelerator exit and the second accelerator entrance, and wherein the second magnet is configured to maximize a second energy spectrum of the ion beam passing between the second accelerator exit and the beam shaping entrance.

10. The high-energy ion implantation system of claim 1 , wherein the beam shaping apparatus comprises:
a scanner apparatus configured to scan the ion beam in a first direction, thereby defining a scanned ion beam; and
an angle corrector lens configured to parallelize and shift the scanned ion beam.

11. The high-energy ion implantation system of claim 1 , further comprising a final energy magnet comprising an energy defining aperture, wherein the final energy magnet is configured to bend the ion beam at a predetermined angle, and wherein the energy defining aperture is configured to pass only desired ions at a desired energy therethrough.

12. The high-energy ion implantation system of claim 1 , wherein the first plane is offset from the second plane by greater than approximately 45°.

13. The high-energy ion implantation system of claim 4 , wherein the first plane is offset from the second plane by approximately 90°.

14. The high-energy ion implantation system of claim 1 , wherein one or more of the first magnet and the second magnet are configured to minimize an energy dispersion of the ion beam.

15. The high-energy ion implantation system of claim 1 , wherein the first magnet is configured to alter the trajectory of the beam path by approximately 180° along the first plane.

16. The high-energy ion implantation system of claim 15 , wherein the second magnet is configured to alter the trajectory of the beam path by approximately 180° along the second plane.

17. The high-energy ion implantation system of claim 1 , wherein one or more of the first magnet and the second magnet comprise a plurality of pole faces configured to minimize energy dispersion of the ion beam.

18. The high-energy ion implantation system of claim 1 , wherein one or more of the first magnet and the second magnet comprises one of a magnetic quadrupole and an electrostatic quadrupole.

19. The high-energy ion implantation system of claim 1 , wherein the beam shaping apparatus defines an S-shaped bend in the beam path of the ion beam.

20. A high-energy ion implantation system comprising:
an ion source configured to form an ion beam along a beam path;
a mass analyzer configured to mass analyze the ion beam along the beam path;
a first RF linear accelerator configured to receive the ion beam at a first accelerator entrance thereof from the mass analyzer and to accelerate the ion beam to a first accelerator exit along the beam path;
a second RF linear accelerator configured to receive the ion beam at a second accelerator entrance thereof and to accelerate the ion beam to a second accelerator exit along the beam path;
a first magnet disposed between the first accelerator exit and the second accelerator entrance along the beam path, wherein the first magnet is configured to alter a trajectory of the beam path by approximately 180° along a first plane;
a third RF linear accelerator configured to receive the ion beam at a third accelerator entrance thereof and to accelerate the ion beam to a third accelerator exit along the beam path;
a second magnet disposed between the second accelerator exit and the third accelerator entrance a

Assignees

• Axcelis Tech Inc

Inventors

• Platow Wilhelm
• Satoh Shu
• Bassom Neil

Classifications

• H01J2237/1508

  Combined electrostatic-electromagnetic means · CPC title

• H01J2237/05

  Arrangements for energy or mass analysis · CPC title

• H01J2237/0473

  accelerating · CPC title

• H01J37/147

  Arrangements for directing or deflecting the discharge along a desired path ({H01J37/045 take precedence;} lenses H01J37/10) · CPC title

• C23C14/48

  Ion implantation · CPC title