Processing method and processing apparatus for ingot

Patent metadata

Field	Value
Publication number	US-12427604-B2
Application number	US-202217804695-A
Country	US
Kind code	B2
Filing date	May 31, 2022
Priority date	Jun 11, 2021
Publication date	Sep 30, 2025
Grant date	Sep 30, 2025

Abstract

An ingot is processed by applying exciting light, and detecting fluorescence occurring from an upper surface of the ingot. A distribution of the number of photons of the fluorescence on the upper surface of the ingot is stored as two-dimensional data in association with XY coordinate positions, and a Z-coordinate position at which the two-dimensional data is obtained is also stored. A laser beam forms a peeling layer by irradiating the ingot while positioning the condensing point of the laser beam at a depth corresponding to the thickness of a wafer from the upper surface of the ingot. A wafer is separated from the ingot with the peeling layer as a starting point, and three-dimensional data is generated representing the distribution of the number of photons of the fluorescence in the whole of the ingot on the basis of two-dimensional data at each Z-coordinate position of the ingot.

First claim

What is claimed is:

1. A processing method for an ingot, the processing method comprising:
a fluorescence detecting step of irradiating the ingot with exciting light of a predetermined wavelength from above the ingot and detecting the number of photons of fluorescence occurring from an upper surface of the ingot;
a storing step of storing a distribution of the number of photons of the fluorescence on the upper surface of the ingot, the fluorescence being detected in the fluorescence detecting step, as two-dimensional data in association with XY coordinate positions on an XY plane orthogonal to a height direction of the ingot, and storing a Z-coordinate position at which the two-dimensional data is obtained, the Z-coordinate position being a position in the height direction of the ingot, in association with the two-dimensional data;
a laser beam irradiating step of, after the storing step, forming a peeling layer in the ingot by irradiating the ingot with a laser beam of a wavelength transmissible through the ingot while positioning a condensing point of the laser beam at a depth corresponding to a thickness of a wafer to be produced, from the upper surface of the ingot, and moving the condensing point and the ingot relative to each other in an XY direction;
a wafer producing step of separating the wafer from the ingot with the peeling layer formed in the laser beam irradiating step, as a starting point; and
a three-dimensional data generating step of generating three-dimensional data representing the distribution of the number of photons of the fluorescence in a whole of the ingot, on a basis of two-dimensional data at each Z-coordinate position of the ingot, the two-dimensional data being stored in the storing step, after producing a plurality of wafers from the ingot by repeating the fluorescence detecting step, the storing step, the laser beam irradiating step, and the wafer producing step.

2. The processing method for an ingot according to claim 1 , further comprising:
a display step of displaying the three-dimensional data.

3. The processing method for an ingot according to claim 2 , wherein
the storing step sets a region in which the number of photons of the fluorescence detected in the fluorescence detecting step is equal to or more than a predetermined value as a non-facet region, sets a region in which the number of photons of the fluorescence is smaller than the predetermined value as a facet region, and stores XY coordinate positions of the non-facet region and the facet region, and
the display step displays a boundary between the facet region and the non-facet region in the whole of the ingot.

Assignees

• Disco Corp

Inventors

• Nomoto Asahi
• Sudo Yujiro
• Hirata Kazuya
• Takahashi Kunimitsu

Classifications

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10P90/12

  Preparing bulk and homogeneous wafers · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• B23K26/0853

  Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane · CPC title

• B23K2101/40

  Semiconductor devices · CPC title