Semiconductor device and method for fabricating semiconductor device

Patent metadata

Field	Value
Publication number	US-12426352-B2
Application number	US-202318507125-A
Country	US
Kind code	B2
Filing date	Nov 13, 2023
Priority date	Feb 21, 2020
Publication date	Sep 23, 2025
Grant date	Sep 23, 2025

Abstract

Provided is a semiconductor device including a semiconductor substrate; a transistor portion provided in the semiconductor substrate; a current sensing portion for detecting current flowing through the transistor portion; an emitter electrode set to an emitter potential of the transistor portion; a sense electrode electrically connected to the current sensing portion; and a Zener diode electrically connected between the emitter electrode and the sense electrode. Provided is a semiconductor device fabricating method including providing a transistor portion in a semiconductor substrate; providing a current sensing portion for detecting current flowing through the transistor portion; providing an emitter electrode set to an emitter potential of the transistor portion; providing a sense electrode electrically connected to the current sensing portion; and providing a Zener diode electrically connected between the emitter electrode and the sense electrode.

First claim

What is claimed is:

1. A semiconductor device fabricating method comprising:
providing a transistor portion in a semiconductor substrate;
providing a current sensing portion for detecting current flowing through the transistor portion;
providing an emitter electrode set to an emitter potential of the transistor portion;
providing a sense electrode electrically connected to the current sensing portion;
providing a Zener diode electrically connected to the sense electrode;
providing an emitter potential electrode that is set to the emitter potential and electrically connected to the Zener diode such that the Zener diode is electrically connected between the emitter potential electrode and the sense electrode;
arranging for the emitter potential electrode to surround the sense electrode on all sides such that the emitter potential electrode defines an enclosed area and the sense electrode is located inside the enclosed area in plan view; and
providing a cathode pad between the emitter potential electrode and the emitter electrode, wherein the sense electrode is provided between an anode pad and the cathode pad.

2. The semiconductor device fabricating method according to claim 1 , wherein
a PN structure of the Zener diode is formed by using a process common to a PN structure of a diode of a temperature sensing portion.

3. The semiconductor device fabricating method according to claim 1 , comprising:
providing a well region of a second conductivity type that is provided in the semiconductor substrate and set to the emitter potential;
providing an interlayer dielectric film between the emitter potential electrode and the well region;
providing a contact hole in the interlayer dielectric film; and
providing, in the contact hole, a contact portion that electrically connects the emitter potential electrode and the well region.

4. The semiconductor device fabricating method according to claim 2 , comprising:
providing a well region of a second conductivity type that is provided in the semiconductor substrate and set to the emitter potential;
providing an interlayer dielectric film between the emitter potential electrode and the well region;
providing a contact hole in the interlayer dielectric film; and
providing, in the contact hole, a contact portion that electrically connects the emitter potential electrode and the well region.

5. The semiconductor device fabricating method according to claim 1 , comprising:
providing an electrode connecting portion connecting the emitter potential electrode and the emitter electrode, above the semiconductor substrate.

6. The semiconductor device fabricating method according to claim 2 , comprising:
providing an electrode connecting portion connecting the emitter potential electrode and the emitter electrode, above the semiconductor substrate.

7. The semiconductor device fabricating method according to claim 3 , comprising:
providing an electrode connecting portion connecting the emitter potential electrode and the emitter electrode, above the semiconductor substrate.

8. The semiconductor device fabricating method according to claim 4 , comprising:
providing an electrode connecting portion connecting the emitter potential electrode and the emitter electrode, above the semiconductor substrate.

9. The semiconductor device fabricating method according to claim 1 , wherein
a region of a first conductivity type of the Zener diode is formed by using a process common to an emitter region of the first conductivity type of the transistor portion.

10. A semiconductor device fabricating method comprising:
providing a transistor portion in a semiconductor substrate;
providing a current sensing portion for detecting current flowing through the transistor portion;
providing an emitter electrode set to an emitter potential of the transistor portion;
providing a sense electrode electrically connected to the current sensing portion;
providing a Zener diode electrically connected to the sense electrode;
providing an emitter potential electrode that is set to the emitter potential and is electrically connected to the Zener diode such that the Zener diode is electrically connected between the emitter potential electrode and the sense electrode;
arranging for the emitter potential electrode to surround the sense electrode;
providing one or more of a gate pad and an anode pad between the emitter potential electrode and at least a portion of the emitter electrode;
providing a well region of a second conductivity type that is provided in the semiconductor substrate and set to the emitter potential;
providing an interlayer dielectric film between the emitter potential electrode and the well region;
providing a contact hole in the interlayer dielectric film; and
providing, in the contact hole, a contact portion that electrically connects the emitter potential electrode and the well region in order to set the emitter potential electrode to the emitter potential.

11. The semiconductor device fabricating method according to claim 10 , wherein the emitter potential electrode surrounds the sense electrode on all sides such that the emitter potential electrode defines an enclosed area and the sense electrode is located inside the enclosed area in plan view,
a cathode pad is provided between the emitter potential electrode and the emitter electrode, and
the sense electrode is provided between an anode pad and the cathode pad.

Assignees

• Fuji Electric Co Ltd

Inventors

• Mitsuzuka Kaname
• Onozawa Yuichi

Classifications

• H10W40/00

  Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60) · CPC title

• H10P74/273 Primary

  Interconnections for measuring or testing, e.g. probe pads · CPC title

• H10D62/393

  Body regions of DMOS transistors or IGBTs  (cell layout of DMOS H10D62/127) · CPC title

• H10D12/441

  Vertical IGBTs · CPC title

• H10D12/032

  of vertical IGBTs · CPC title