Semiconductor device with temperature-detecting diode

Patent metadata

Field	Value
Publication number	US-9548294-B2
Application number	US-201614994018-A
Country	US
Kind code	B2
Filing date	Jan 12, 2016
Priority date	Aug 9, 2012
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

A capacitive component region is formed below a temperature detecting diode or below a protective diode. In addition, the capacitive component region is formed below an anode metal wiring line connecting the temperature detecting diode and an anode electrode pad and below a cathode metal wiring line connecting the temperature detecting diode and a cathode electrode pad. The capacitive component region is an insulating film interposed between polysilicon layers. Specifically, a first insulating film, a polysilicon conductive layer, and a second insulating film are sequentially formed on a first main surface of a semiconductor substrate, and the temperature detecting diode, the protective diode, the anode metal wiring line, or the cathode metal wiring line is formed on the upper surface of the second insulating film. Therefore, it is possible to improve the static electricity resistance of the temperature detecting diode or the protective diode.

First claim

What is claimed is:

1. A semiconductor device comprising:
an insulated gate semiconductor element that makes a current flow in a thickness direction of a semiconductor substrate;
a temperature detecting diode that detects a temperature of the insulated gate semiconductor element and is provided in an active region of the insulated gate semiconductor element;
an anode metal wiring line that is provided on a first main surface side of the semiconductor substrate and is connected to an anode of the temperature detecting diode;
a cathode metal wiring line that is provided on the first main surface side of the semiconductor substrate and is connected to a cathode of the temperature detecting diode;
a first insulating film that is formed on a first main surface of the semiconductor substrate between the anode and cathode metal wiring lines and the semiconductor substrate;
a first conductive layer that is formed on the first insulating film;
a second insulating film that is formed on the first conductive layer;
a first semiconductor layer that is formed between the second insulating film and the anode metal wiring line;
an interlayer insulating film that is formed between the first semiconductor layer and the anode metal wiring line;
a second semiconductor layer that is formed between the second insulating film and the cathode metal wiring line, the interlayer insulating film being formed between the second semiconductor layer and the cathode metal wiring line;
a second conductive layer that is formed on the first insulating film, the second insulating film being formed on the second conductive layer;
a first capacitor that has the second insulating film between the first semiconductor layer and the first conductive layer as a first capacitive component region;
a second capacitor that has the second insulating film between the second semiconductor layer and the first conductive layer as a second capacitive component region; and
a third capacitor that has the first insulating film between the first conductive layer and the semiconductor substrate as a third capacitive component region,
wherein the first semiconductor layer and the anode metal wiring line are electrically insulated, while the second semiconductor layer and the cathode metal wiring line are electrically insulated,
the first conductive layer and the second conductive layer are electrically connected to a gate electrode of the insulated gate semiconductor element, and
the second conductive layer is provided between the temperature detecting diode and the first conductive layer, and the active region.

2. The semiconductor device according to claim 1 ,
wherein the insulated gate semiconductor element includes:
a first semiconductor region of a first conductivity type that is formed in a surface layer on the first main surface side of the semiconductor substrate;
a second semiconductor region of a second conductivity type that is formed in a surface layer of the first semiconductor region which is close to the first main surface;
a trench that extends from a surface of the selectively formed second semiconductor region to the first semiconductor region;
a gate insulating film that is formed along a surface of the first semiconductor region and along an inner wall of the trench in the trench, the gate electrode being provided in the trench so as to come into contact with the gate insulating film; and
a third semiconductor region of the first conductivity type that is adjacent to a side wall of the trench and the gate insulating film, and
the interlayer insulating film is formed on the first main surface side of the gate electrode.

3. The semiconductor device according to claim 1 ,
wherein the temperature detecting diode includes:
the first insulating film that is formed on the first main surface of the semiconductor substrate;
a third conductive layer that is formed on the first insulating film, the second insulating film being formed on the third conductive layer;
a first-conductivity-type layer and a second-conductivity-type layer that are formed on the second insulating film;
a fourth capacitor that has the second insulating film between the third conductive layer and the first-conductivity-type layer as a fourth capacitive component region;
a fifth capacitor that has the second insulating film between the third conductive layer and the second-conductivity-type layer as a fifth capacitive component region; and
a sixth capacitor that has the first insulating film between the third conductive layer and the semiconductor substrate as a sixth capacitive component region,
wherein the third conductive layer is electrically insulated from the first conductive layer and the second conductive layer.

4. The semiconductor device according to claim 2 ,
wherein the first insulating film and the gate insulating film are each a portion, formed at a same time, of a same insulating film.

5. The semiconductor device according to claim 3 ,
wherein the first conductive layer, the second conductive layer, and the third conductive layer are each a portion, formed at a same time, of a same conductive layer.

6. A semiconductor device comprising:
an insulated gate semiconductor element that makes a current flow in a thickness direction of a semiconductor substrate;
a temperature detecting diode that detects a temperature of the insulated gate semiconductor element and is provided in an active region of the insulated gate semiconductor element;
an anode metal wiring line that is provided on a first main surface side of the semiconductor substrate and is connected to an anode of the temperature detecting diode;
a cathode metal wiring line that is provided on the first main surface side of the semiconductor substrate and is connected to a cathode of the temperature detecting diode;
a first insulating film that is formed on a first main surface of the semiconductor substrate between the anode and cathode metal wiring lines and the semiconductor substrate;
a first conductive layer that is formed on the first insulating film;
a second insulating film that is formed on the first conductive layer;
an interlayer insulating film that is formed between the second insulating film and the anode metal wiring line, the interlayer insulating film being formed between the second insulating film and the cathode metal wiring line;
a second conductive layer that is formed on the first insulating film, the second insulating film being formed on the second conductive layer; and
a first capacitor that has the first insulating film between the first conductive layer and the semiconductor substrate as a first capacitive component region,
wherein the first conductive layer and the anode metal wiring line are electrically insulated, while the first conductive layer and the cathode metal wiring line are electrically insulated,
the first conductive layer and the second conductive layer are electrically connected to a gate electrode of the insulated gate semiconductor element, and
the second conductive layer is formed between the temperature detecting diode and the first conductive layer, and the active region.

7. The semiconductor device according to claim 6 ,
wherein the insulated gate semiconductor element includes:
a first semiconductor region of a first conductivity type that is formed in a surface layer on the first main surface side of the semiconductor substrate;
a second semiconductor region of a second conductivity type that is formed in a surface layer of the first semiconductor region that is close to the first main surface;
a trench that extends from a surface of the selectively formed second semiconductor region to the first semiconductor region;
a gate insulating film that is formed along a

Assignees

• Fuji Electric Co Ltd

Inventors

• Nishimura Takeyoshi

Classifications

• H10W20/496

  Capacitor integral with wiring layers · CPC title

• H01L29/417

  Electricity · mapped topic

• H01L29/7813

  Electricity · mapped topic

• H01L29/66734

  Electricity · mapped topic

• H01L27/0629

  Electricity · mapped topic