Storage device, electronic apparatus, and method of manufacturing storage device

Patent metadata

Field	Value
Publication number	US-12424254-B2
Application number	US-202118252860-A
Country	US
Kind code	B2
Filing date	Nov 5, 2021
Priority date	Nov 20, 2020
Publication date	Sep 23, 2025
Grant date	Sep 23, 2025

Abstract

A storage device according to an aspect of the present disclosure includes a plurality of storage elements (e.g., MTJ element) each including a fixed layer with a fixed magnetization direction, a storage layer with a changeable magnetization direction, and an insulating layer provided between the fixed layer and the storage layer, an underlayer (e.g., lower insulating layer) on which the plurality of storage elements is provided in an array, and a semiconductor substrate having a surface on which the underlayer is laminated. The underlayer has an inclined surface inclined with respect to the surface, and any of the plurality of storage elements is provided on the inclined surface.

First claim

The invention claimed is:

1. A storage device, comprising:
a plurality of storage elements, each including
a fixed layer with a fixed magnetization direction,
a storage layer with a changeable magnetization direction, and
an insulating layer between the fixed layer and the storage layer;

an underlayer on which the plurality of storage elements is in an array; and
a semiconductor substrate having a surface on which the underlayer is laminated, wherein
the underlayer has a flat surface parallel to the surface and an inclined surface inclined with respect to the surface, and
the plurality of storage elements is on the flat surface and the inclined surface.

2. The storage device according to claim 1 , wherein
the underlayer includes a plurality of inclined surfaces including the inclined surface,
each of the plurality of inclined surfaces has different inclination angles with respect to the surface, and
the plurality of storage elements is on the flat surface and the plurality of inclined surfaces.

3. The storage device according to claim 1 , wherein
the underlayer includes a plurality of inclined surfaces including the inclined surface,
each of the plurality of inclined surfaces has different inclination directions with respect to the surface, and
at least one of the plurality of storage elements is on the plurality of inclined surfaces.

4. The storage device according to claim 3 , wherein
the underlayer includes the plurality of inclined surfaces in which a separation distance between the plurality of inclined surfaces gradually increases toward the surface.

5. The storage device according to claim 3 , wherein
inclination angles of the each of the plurality of inclined surfaces is same.

6. The storage device according to claim 3 , wherein
inclination angles of the each of the plurality of inclined surfaces is different.

7. The storage device according to claim 1 , wherein
the underlayer includes a through wiring electrically connected to the storage elements on the inclined surface.

8. The storage device according to claim 7 , wherein
the inclined surface includes an exposed surface on which the through wiring is exposed from the underlayer, and
the storage elements electrically connected to the through wiring is inside the exposed surface.

9. An electronic apparatus, comprising
a storage device that stores information,
the storage device including:
a plurality of storage elements each including
a fixed layer with a fixed magnetization direction,
a storage layer with a changeable magnetization direction, and
an insulating layer between the fixed layer and the storage layer,

an underlayer on which the plurality of storage elements is in an array, and
a semiconductor substrate having a surface on which the underlayer is laminated, wherein
the underlayer has a flat surface parallel to the surface and an inclined surface inclined with respect to the surface, and
the plurality of storage elements is on the flat surface and on the inclined surface.

10. A method of manufacturing a storage device, comprising
forming an underlayer having a flat surface which is parallel to a surface of a semiconductor substrate and an inclined surface which is inclined with respect to the surface of the semiconductor substrate, wherein the underlayer is laminated on the surface; and
forming, on the flat surface and the inclined surface, a plurality of storage elements, where each of the plurality of storage elements include a fixed layer with a fixed magnetization direction, a storage layer with a changeable magnetization direction, and an insulating layer provided between the fixed layer and the storage layer, wherein the plurality of storage elements is in an array on the underlayer.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Uchida Hiroyuki
• Sato Yo

Classifications

• H10N50/10

  Magnetoresistive devices · CPC title

• H10N50/01

  Manufacture or treatment · CPC title

• H10N50/80

  Constructional details · CPC title

• H10B61/22 Primary

  of the field-effect transistor [FET] type · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title