Semiconductor processing tool and methods of operation

US12422755B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12422755-B2
Application numberUS-202418409132-A
CountryUS
Kind codeB2
Filing dateJan 10, 2024
Priority dateAug 6, 2021
Publication dateSep 23, 2025
Grant dateSep 23, 2025

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.

First claim

Opening claim text (preview).

What is claimed is: 1. A method, comprising: splitting at least one of a pre-pulse laser beam or a main-pulse laser beam into a first portion and a second portion; generating, based on the first portion, a primary laser beam having a first spatial energy-distribution profile; generating, based on the second portion, an auxiliary laser beam having a second spatial energy-distribution profile; and providing the primary laser beam and the auxiliary laser beam to generate a plasma from a deformed droplet of a target material. 2. The method of claim 1 , further comprising: generating the at least one of the pre-pulse laser beam or the main-pulse laser beam, wherein at least one of: the pre-pulse laser beam is generated based on providing a pre-pulse seed laser beam into a first amplifier chain, or the main-pulse laser beam is generated based on providing a main-pulse seed laser beam into a second amplifier chain. 3. The method of claim 2 , wherein the pre-pulse laser beam and the main-pulse laser beam are generated, wherein only the main-pulse laser beam is split into the first portion and the second portion, and wherein the pre-pulse laser beam is provided with the main-pulse laser beam and the auxiliary laser beam of the main-pulse laser beam to generate the plasma from the deformed droplet of the target material. 4. The method of claim 1 , wherein the at least one of the pre-pulse laser beam or the main-pulse laser beam is split into the first portion and the second portion via an optical component. 5. The method of claim 4 , further comprising: rotating the second portion, wherein the auxiliary laser beam is generated based on rotating the second portion. 6. The method of claim 1 , wherein the primary laser beam and the auxiliary laser beam are provided as a physically combined beam. 7. The method of claim 6 , wherein a spatial energy distribution profile of the physically combined beam has a greater spatial uniformity than a spatial energy distribution profile of each of the primary laser beam and the auxiliary laser beam. 8. A method, comprising: receiving a semiconductor substrate coated with a photoresist material; and exposing the semiconductor substrate to light generated by a plasma in an extreme ultraviolet (EUV) radiation source, wherein generating the plasma comprises: splitting at least one of a pre-pulse laser beam or a main-pulse laser beam into a first portion and a second portion; generating, based on the first portion, a primary laser beam having a first spatial energy-distribution profile; generating, based on the second portion, an auxiliary laser beam having a second spatial energy-distribution profile; and providing, to the EUV radiation source, the primary laser beam and the auxiliary laser beam to generate a deformed droplet from a droplet of a target material in a vessel of the EUV radiation source. 9. The method of claim 8 , wherein only the pre-pulse laser beam is split into the first portion and the second portion. 10. The method of claim 8 , wherein only the main-pulse laser beam is split into the first portion and the second portion. 11. The method of claim 8 , wherein the pre-pulse laser beam and the main-pulse laser beam are each split into the first portion and the second portion, wherein the primary laser beam and the auxiliary laser beam are generated for each of the pre-pulse laser beam and the main-pulse laser beam, and wherein the primary laser beam and the auxiliary laser beam for each of the pre-pulse laser beam and the main-pulse laser beam are provided to generate the deformed droplet. 12. The method of claim 8 , further comprising: generating the pre-pulse laser beam and the main-pulse laser beam, wherein each of the primary laser beam and the auxiliary laser beam corresponds to one of the pre-pulse laser beam or the main-pulse laser beam; and providing another one of the pre-pulse laser beam or the main-pulse laser beam to generate the deformed droplet from the droplet of the target material in the vessel of the EUV radiation source. 13. The method of claim 12 , wherein the primary laser beam and the auxiliary laser beam corresponding to one of the pre-pulse laser beam or the main-pulse laser beam are provided at a first location of a path of the droplet of the target material within the vessel of the EUV radiation source, and wherein the other one of the pre-pulse laser beam or the main-pulse laser beam is provided at a second location of the path of the droplet of the target material within the vessel of the EUV radiation source. 14. A method, comprising: providing, to a primary laser source associated with an extreme ultraviolet (EUV) radiation source, a first signal to cause the primary laser source to generate a first plurality of laser beams to generate a plasma from a first droplet of a target material; and providing, to an auxiliary laser source associated with the EUV radiation source, a second signal to cause the auxiliary laser source to generate a second plurality of laser beams to generate the plasma from a second droplet of the target material, wherein at least one of: a third signal is provided to the primary laser source to deactivate the primary laser source after the first plurality of laser beams are generated, a fourth signal is provided to the auxiliary laser source after the second plurality of laser beams are generated, or the second signal is to cause the auxiliary laser source to generate the second plurality of laser beams at least one of:  concurrently with the primary laser source generating a subset of the first plurality of laser beams, or  after the primary laser source finishes generating the first plurality of laser beams. 15. The method of claim 14 , further comprising: providing, to the primary laser source, the third signal to deactivate the primary laser source after the first plurality of laser beams are generated. 16. The method of claim 15 , wherein providing the second signal to cause the auxiliary laser source to generate the second plurality of laser beams comprises: providing the second signal to cause the auxiliary laser source to generate the second plurality of laser beams based on a timing offset, and wherein providing the third signal to deactivate the primary laser source comprises: providing the third signal to deactivate the primary laser source based on the timing offset. 17. The method of claim 15 , wherein providing the second signal to cause the auxiliary laser source to generate the second plurality of laser beams and providing the third signal to deactivate the primary laser source comprise: detecting a degradation of a power intensity of the first plurality of laser beams; and providing, based on detecting the degradation of the power intensity: the second signal to cause the auxiliary laser source to generate the second plurality of laser beams, and the third signal to deactivate the primary laser source. 18. The method of claim 14 , further comprising: providing the fourth signal to deactivate the auxiliary laser source after the second plurality of laser beams are generated. 19. The method of claim 14 , further comprising: providing a fifth signal to cause the primary laser source to generate a third plurality of laser beams to generate the plasma from a third droplet of the target material, wherein the fifth signal is to cause the primary laser source to generate the third plurality of laser beams at least one of: concurrently with the auxiliary laser source generating a su

Assignees

Inventors

Classifications

  • Optical arrangements for conveying the laser beam to the plasma generation location · CPC title

  • H05G2/0088Primary

    for preconditioning the plasma generating material · CPC title

  • Control of the laser beam · CPC title

  • by plasma extreme ultraviolet [EUV] sources · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US12422755B2 cover?
Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/…
Who is the assignee on this patent?
Taiwan Semiconductor Mfg Co Ltd
What technology area does this patent fall under?
Primary CPC classification H05G2/0088. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 23 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 10 related publications on this page (citations in our corpus or others sharing the same primary CPC).