Polishing head assembly having recess and cap

Patent metadata

Field	Value
Publication number	US-12420376-B2
Application number	US-202218065855-A
Country	US
Kind code	B2
Filing date	Dec 14, 2022
Priority date	Dec 23, 2021
Publication date	Sep 23, 2025
Grant date	Sep 23, 2025

Abstract

A polishing head assembly for polishing of semiconductor wafers includes a polishing head and a cap. The polishing head has a recess along a bottom portion. The recess has a recessed surface. The cap is positioned within the recess. The cap includes an annular wall secured to the polishing head and a floor joined to the annular wall at a joint. The floor extends across the annular wall, and the floor has an upper surface and a lower surface. The upper surface is spaced from the recessed surface to form a chamber therebetween. A deformation resistance of a portion of the floor proximate the joint is weakened to allow the portion of the floor proximate the joint to deflect relative to the polishing head by a change of pressure in the chamber.

First claim

What is claimed is:

1. A polishing head assembly for polishing of semiconductor wafers, the polishing head assembly comprising:
a polishing head having a recess along a bottom portion, the recess having a recessed surface; and
a cap positioned within the recess, the cap comprising:
an annular wall secured to the polishing head, the annular wall comprising a first portion having a first thickness and a second portion extending from the first portion and having a second thickness; and
a floor joined to the annular wall at a joint, the floor extending across the annular wall, the floor having an upper surface and a lower surface, the upper surface spaced from the recessed surface to form a chamber therebetween, wherein the first portion of the annular wall is joined to the floor and the first thickness is less than the second thickness to weaken a deformation resistance of a portion of the floor proximate the joint compared to other portions of the floor to allow the portion of the floor proximate the joint to deflect relative to the polishing head by a change of pressure in the chamber.

2. The polishing head assembly of claim 1 , wherein the first thickness is from about 3 mm to about 5 mm.

3. The polishing head assembly of claim 2 , wherein the first thickness is about 3 mm.

4. The polishing head assembly of claim 1 , wherein the floor has a continuous thickness of from about 5 mm to about 6 mm.

5. The polishing head assembly of claim 1 , wherein:
the polishing head has a top portion and holes extending from the top portion through the recessed surface;
the annular wall further comprises a shoulder extending from the second portion, the shoulder having apertures corresponding to the holes; and
the holes and the corresponding apertures receive fasteners to secure the shoulder of the annular wall to the recessed surface of the polishing head.

6. The polishing head assembly of claim 1 , wherein the annular wall tapers inwardly toward the joint from the second thickness to the first thickness such that the first thickness of the annular wall is proximate the joint to weaken the deformation resistance of the portion of the floor proximate the joint.

7. The polishing head assembly of claim 6 , wherein the first thickness of the annular wall proximate the joint is from about 3 mm to about 5 mm.

8. The polishing head assembly of claim 6 , wherein the first thickness of the annular wall proximate the joint is about 3 mm.

9. The polishing head assembly of claim 6 , wherein the floor has a continuous thickness of from about 5 mm to about 6 mm.

10. The polishing head assembly of claim 1 , wherein a thickness of the floor tapers inwardly toward the joint such that the thickness of the floor is smallest at the portion proximate the joint to weaken the deformation resistance of the portion of the floor proximate the joint.

11. The polishing head assembly of claim 10 , wherein the thickness of the floor is greatest at a center of the floor.

12. The polishing head assembly of claim 11 , wherein the thickness of the floor at the portion proximate the joint is about 3 mm and the thickness of the floor at the center is from about 5 mm to about 6 mm.

13. The polishing head assembly of claim 1 , wherein the cap is made of a metallic material.

14. The polishing head assembly of claim 1 , wherein the annular wall is secured to the polishing head with an adhesive.

15. A polishing head assembly for polishing of semiconductor wafers, the polishing head assembly comprising:
a polishing head having a top portion and a recess along a bottom portion, the recess having a recessed surface, and holes extending from the top portion through the recessed surface;
a cap positioned within the recess, the cap comprising:
an annular wall having apertures corresponding to the holes, wherein the holes and corresponding apertures receive fasteners to secure the annular wall to the recessed surface; and

a floor joined to the annular wall at a joint, the floor extending across the annular wall, the floor having an upper surface and a lower surface, the upper surface spaced from the recessed surface to form a chamber therebetween, the floor capable of deflecting relative to the polishing head by a change of pressure in the chamber;
wherein a deformation resistance of a portion of the floor proximate the joint is weakened relative to other portions of the floor to allow the portion of the floor proximate the joint to deflect relative to the polishing head.

16. The polishing head assembly of claim 15 , wherein a thickness of the floor tapers inwardly toward the joint such that the thickness of the floor is smallest at the portion proximate the joint to weaken the deformation resistance of the portion of the floor proximate the joint.

17. The polishing head assembly of claim 16 , wherein the thickness of the floor at the portion proximate the joint is about 3 mm and the thickness of the floor at a center of the floor is from about 5 mm to about 6 mm.

18. The polishing head assembly of claim 15 , wherein the cap is made of a metallic material.

19. A polishing head assembly for polishing of semiconductor wafers, the polishing head assembly comprising:
a polishing head having a platform and holes extending through the platform; and
a cap having an annular wall secured to the polishing head and a floor joined to the annular wall at a joint, the annular wall having apertures corresponding to the holes, wherein the holes and corresponding apertures receive fasteners to secure the annular wall to the platform of the polishing head;
wherein the polishing head and the cap define a chamber between the polishing head and the floor of the cap;
wherein the floor is made from a metallic material capable of deflecting relative to the polishing head in response to a change in pressure in the chamber; and
wherein a thickness of at least one of the annular wall and the floor is reduced proximate the joint to weaken a deformation resistance of the floor proximate the joint compared to other portions of the floor.

Assignees

• Globalwafers Co Ltd

Inventors

• Hsu Chih Yuan
• Lin Jen Chieh
• Hu Chieh
• Huang Wei Chang
• Yang Yau-Ching

Classifications

• B24B37/10

  for single side lapping · CPC title

• B24B37/26 Primary

  characterised by the shape of the lapping pad surface, e.g. grooved · CPC title

• B24B37/30 Primary

  for single side lapping of plane surfaces · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title