Shadow mask apparatus and methods for variable etch depths

Patent metadata

Field	Value
Publication number	US-12417892-B2
Application number	US-202217722874-A
Country	US
Kind code	B2
Filing date	Apr 18, 2022
Priority date	Feb 13, 2020
Publication date	Sep 16, 2025
Grant date	Sep 16, 2025

Abstract

Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.

First claim

What is claimed is:

1. A shadow mask apparatus, comprising:
a shadow mask positioned over a grating material, wherein at least a portion of the shadow mask is separated from the grating material by a distance;
a plurality of openings provided through the shadow mask, each of the plurality of openings defined by a leading edge and a trailing edge relative to a direction of travel of an ion beam; and
a raised surface feature along the leading edge or the trailing edge of at least one opening of the plurality of openings, wherein an uppermost surface of the raised surface feature extends above an uppermost surface of the shadow mask, and wherein the uppermost surface of the raised surface feature extends at a non-zero angle relative to the uppermost surface of the shadow mask.

2. The shadow mask apparatus of claim 1 , wherein the raised surface feature is positioned along the leading edge of the at least one opening, and wherein a second raised surface feature is positioned along the trailing edge of the at least one opening.

3. The shadow mask apparatus of claim 2 , wherein a first shape of the raised surface feature is different than a second shape of the second raised surface feature.

4. The shadow mask apparatus of claim 2 , wherein the second raised surface feature extends towards the grating material from a bottom surface of the shadow mask.

5. The shadow mask apparatus of claim 4 , wherein the grating material is an optical grating material formed atop a substrate.

6. The shadow mask apparatus of claim 1 , wherein the grating material comprises a plurality of trenches and a plurality of fins, wherein each of the plurality of fins is oriented at a non-zero angle with respect to a vertical extending from the top surface of the grating material, and wherein a first depth of a first portion of the plurality of trenches is different than a second depth of a second portion of the plurality of trenches.

7. The shadow mask apparatus of claim 1 , wherein the distance between the shadow mask and the top surface of the etching material varies between the leading edge and the trailing edge of the at least one opening of the plurality of openings.

8. The shadow mask apparatus of claim 7 , wherein the distance between the shadow mask and the top surface of the etching material varies between a first side edge and a second side edge of the at least one opening of the plurality of openings.

9. A shadow mask positionable above an optical grating material, the shadow mask comprising:
a main body including an uppermost surface opposite a bottom surface;
a plurality of openings extending through the shadow mask, between the uppermost surface and the bottom surface, wherein each of the plurality of openings includes a leading edge and a trailing edge relative to a direction of travel of an ion beam; and
a raised surface feature along the leading edge or the trailing edge of at least one opening of the plurality of openings, wherein an uppermost surface of the raised surface feature extends above the uppermost surface of the main body, and wherein the uppermost surface of the raised surface feature extends at a non-zero angle relative to the uppermost surface of the main body.

10. The shadow mask apparatus of claim 9 , wherein the raised surface feature is positioned along the leading edge of the at least one opening, and wherein a second raised surface feature is positioned along the trailing edge of the at least one opening.

11. The shadow mask apparatus of claim 10 , wherein a first shape of the raised surface feature is different than a second shape of the second raised surface feature.

12. The shadow mask apparatus of claim 10 , wherein the second raised surface feature extends towards the optical grating material from the bottom surface of the main body.

13. A shadow mask positionable above an optical grating material during etching of the optical grating material, the shadow mask comprising:
a main body including an uppermost surface opposite a bottom surface, wherein the uppermost surface and the bottom surface are parallel to one another;
a plurality of openings extending through the shadow mask, between the uppermost surface and the bottom surface, wherein each of the plurality of openings includes a leading edge and a trailing edge relative to a direction of travel of an angled ion beam; and
a raised surface feature along the leading edge of at least one opening of the plurality of openings, wherein an uppermost surface of the raised surface feature extends above the uppermost surface of the main body, and wherein the uppermost surface of the raised surface feature extends at a non-zero angle relative to the uppermost surface of the main body.

Assignees

• Applied Materials Inc

Inventors

• Olson Joseph C
• Evans Morgan
• Soldi Thomas
• Meyer Timmerman Thijssen Rutger
• Peploski Maurice Emerson

Classifications

• H01J37/3056

  for microworking, e. g. etching of gratings or trimming of electrical components · CPC title

• H01J37/20

  Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support · CPC title

• H01J2237/0453

  multiple apertures · CPC title

• H01J37/08 Primary

  Ion sources; Ion guns · CPC title

• H01J37/3053 Primary

  for evaporating or etching · CPC title