Temperature detection using negative temperature coefficient resistor in GaN setting

Patent metadata

Field	Value
Publication number	US-12416530-B2
Application number	US-202217931670-A
Country	US
Kind code	B2
Filing date	Sep 13, 2022
Priority date	Sep 13, 2022
Publication date	Sep 16, 2025
Grant date	Sep 16, 2025

Abstract

A structure includes a negative temperature coefficient (NTC) resistor for use in gallium nitride (GaN) technology. The NTC resistor includes a p-type doped GaN (pGaN) layer, and a gallium nitride (GaN) heterojunction structure under the pGaN layer. The GaN heterojunction structure includes a barrier layer and a channel layer. An isolation region extends across an interface of the barrier layer and the channel layer, and a first metal electrode is on the pGaN layer spaced from a second metal electrode on the pGaN layer. The NTC resistor can be used as a temperature compensated reference in a structure providing a temperature detection circuit. The temperature detection circuit includes an enhancement mode HEMT sharing parts with the NTC resistor and includes temperature independent current sources including depletion mode HEMTs.

First claim

What is claimed is:

1. A structure, comprising:
a negative temperature coefficient (NTC) resistor including:
a p-type doped gallium nitride (pGaN) layer;
a gallium nitride (GaN) heterojunction structure under the pGaN layer, the GaN heterojunction structure including a barrier layer and a channel layer;
an isolation region extending across an interface of the barrier layer and the channel layer; and
a first metal electrode on the pGaN layer spaced from a second metal electrode on the pGaN layer.

2. The structure of claim 1 , wherein the barrier layer includes aluminum gallium nitride (AlGaN) having an aluminum (Al) mole fraction between 15-25%.

3. The structure of claim 1 , wherein the pGaN layer and the first and second metal electrodes are adjacent a high electron mobility transistor (HEMT).

4. The structure of claim 3 , wherein the first metal electrode and the pGaN layer form part of a gate of the HEMT structure.

5. The structure of claim 1 , wherein the isolation region includes an amorphizing dopant species including at least one of argon and nitrogen.

6. The structure of claim 1 , wherein the isolation region is directly under the pGaN layer.

7. The structure of claim 1 , wherein the barrier layer includes a portion directly under the pGaN layer, and the isolation region surrounds the portion of the barrier layer.

8. The structure of claim 1 , wherein the NTC resistor is part of a temperature detection circuit including:
a first temperature independent current source;
a second temperature independent current source;
an enhancement mode high electron mobility transistor (EM HEMT) having a gate, a first source/drain region and a second source/drain region;
a first node coupling the first temperature independent current source, the first metal electrode of the NTC resistor and the gate of the EM HEMT;
a second node coupling the first source/drain region of the EM HEMT and the second metal electrode of the NTC resistor to ground; and
an output node coupling the second source/drain region of the EM HEMT and the second temperature independent current source,
wherein in response to a temperature crossing a threshold, a voltage change at the NTC resistor and at the gate of EM HEMT causes the EM HEMT to change states.

9. The structure of claim 8 , wherein the first temperature independent current source and the second temperature independent current source each include a depletion mode HEMT (DM HEMT) having a gate, a first source/drain region and a second source/drain region, and a zero-temperature coefficient (ZTC) resistor coupled between the first source/drain region and the gate of the DM HEMT, wherein the second source/drain region of the DM HEMT is coupled to a voltage source.

10. The structure of claim 9 , wherein the ZTC resistor includes a silicon-chromium resistor.

11. A structure, comprising:
a first temperature independent current source;
a second temperature independent current source;
an enhancement mode high electron mobility transistor (EM HEMT) having a gate, a first source/drain region and a second source/drain region;
a negative temperature coefficient (NTC) resistor including a first metal electrode and a second metal electrode;
a first node coupling the first temperature independent current source, the first metal electrode of the NTC resistor and the gate of the EM HEMT;
a second node coupling the first source/drain region of the EM HEMT and the second metal electrode of the NTC resistor to ground; and
an output node coupling the second source/drain region of the EM HEMT and the second temperature independent current source.

12. The structure of claim 11 , wherein in response to a temperature crossing a threshold, a voltage change at the NTC resistor and at the gate of EM HEMT causes the EM HEMT to change states.

13. The structure of claim 11 , wherein the first temperature independent current source and the second temperature independent current source each include a depletion mode HEMT (DM HEMT) having a gate, a first source/drain region and a second source/drain region, and a zero-temperature coefficient (ZTC) resistor coupled between the first source/drain region and the gate of the DM HEMT, wherein the second source/drain region of the DM HEMT is coupled to a voltage source.

14. The structure of claim 11 , wherein the NTC resistor includes:
a p-type doped gallium nitride (pGaN) layer;
a gallium nitride (GaN) heterojunction structure under the pGaN layer, the GaN heterojunction structure including a barrier layer and a channel layer;
an isolation region extending across an interface of the barrier layer and the channel layer; and
at least two spaced-apart metallic electrodes on the pGaN layer.

15. The structure of claim 14 , wherein the pGaN layer, the barrier layer, and the channel layer are shared with the EM HEMT.

16. The structure of claim 14 , wherein the barrier layer includes aluminum gallium nitride (AlGaN) having an aluminum (Al) mole fraction between 15-25%.

17. The structure of claim 14 , wherein the isolation region includes an amorphizing dopant species including at least one of argon and nitrogen.

18. The structure of claim 14 , wherein the isolation region is directly under the pGaN layer.

19. The structure of claim 14 , wherein the barrier layer includes a portion directly under the pGaN layer, and the isolation region surrounds the portion of the barrier layer.

20. A structure, comprising:
a first temperature independent current source and a second temperature independent current source, wherein the first temperature independent current source and the second temperature independent current source each include a depletion mode HEMT (DM HEMT) having a gate, a first source/drain region and a second source/drain region, and a zero-temperature coefficient (ZTC) resistor coupled between the first source/drain region and the gate of the DM HEMT, wherein the second source/drain region of the DM HEMT is coupled to a voltage source;
an enhancement mode high electron mobility transistor (EM HEMT) having a gate, a first source/drain region and a second source/drain region;
a negative temperature coefficient (NTC) resistor including a first metal electrode and a second metal electrode;
a first node coupling the first temperature independent current source, the first metal electrode of the NTC resistor and the gate of the EM HEMT;
a second node coupling the first source/drain region of the EM HEMT and the second metal electrode of the NTC resistor to ground; and
an output node coupling the second source/drain region of the EM HEMT and the second temperature independent current source,
wherein in response to a temperature crossing a threshold, a voltage change at the NTC resistor and at the gate of EM HEMT causes the EM HEMT to change states.

21. A negative temperature coefficient (NTC) resistor, comprising:
a p-type doped gallium nitride (pGaN) layer;
a gallium nitride (GaN) heterojunction structure under the pGaN layer, the GaN heterojunction structure including a barrier layer and a channel layer;
an isolation region extending across an interface of the barrier layer and the channel layer; and
a first metal electrode on the pGaN layer spaced from a second metal electrode on the pGaN layer.

Assignees

• Globalfoundries Us Inc

Inventors

• Sharma Santosh
• Zierak Michael J
• Bentley Steven J
• Kantarovsky Johnatan Avraham

Classifications

• H10W40/00

  Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60) · CPC title

• H10D84/01

  Manufacture or treatment · CPC title

• H10D64/111

  Field plates · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D62/824

  comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions · CPC title