Device and method for sensing an over-temperature of a power semiconductor

Patent metadata

Field	Value
Publication number	US-12416528-B2
Application number	US-202017789721-A
Country	US
Kind code	B2
Filing date	Dec 17, 2020
Priority date	Jan 21, 2020
Publication date	Sep 16, 2025
Grant date	Sep 16, 2025

Abstract

The present invention concerns a device and a method for sensing an over-temperature of a power semiconductor. The invention: provides a current pulse source through control electrodes of the power semiconductor, duplicates the current provided by the current pulse source and provides the duplicated current to an emulating device, compares the voltage across the control electrodes to the voltage across the emulating device, notifies the result of the comparison.

First claim

The invention claimed is:

1. A device for sensing an over-temperature of a power semiconductor, wherein the device comprises:
a current pulse source that is provided through control electrodes of the power semiconductor,
a current copier that duplicates the current provided by the current pulse source, and that provides the duplicated current to an emulating device,
a comparator that compares the voltage across the control electrodes to the voltage across the emulating device, and
a controller configured to notify the result of the comparison, wherein
the emulating device comprises a resistor and a capacitor connected in series,
the resistor value is equal or lower than a gate resistance value of the power semiconductor when the power semiconductor is at a temperature equal to one degree Celsius less than the maximum junction temperature of the power semiconductor.

2. The device according to claim 1 , wherein the controller is configured to control the switching pattern of the power semiconductor according to the signal outputted by the comparator by modifying a pattern applied to the power semiconductor device based on the comparator indicating that the resistance of the power semiconductor is greater than the resistance of the resistor.

3. The device according to claim 1 , wherein the control electrodes the current source is applied to are a gate and an emitter or a gate and a source.

4. The device according to claim 2 , wherein the current pulse source is provided to the power semiconductor when the power semiconductor is not switching or in a transition mode.

5. The device according to claim 1 , wherein the capacitor value is equal or lower than a gate capacitance value of the power semiconductor.

6. The device according to claim 5 , wherein the resistor value is adjusted during a calibration phase.

7. The device according to claim 6 , wherein the current pulse duration is equal to:

t
max

<

❘
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Vsupply
-

V
th

❘
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-

R
G

·
I

I

·

C
G

where Vth stands for the threshold voltage for the gate of the power semiconductor, Vsupply is the negative gate voltage that prevents the power semiconductor to turn-on or Vsupply is the positive gate voltage that prevents the power semiconductor to turn-off, Rg is the gate resistance value, Cg is the gate capacitance value of the power semiconductor and I is the current pulse value.

8. The device according to claim 1 , wherein the device further comprises at least one other comparator,
a first terminal of the resistor is connected to the current copier and a second terminal of the resistor is connected to the emulating device and the at least one other comparator compares the voltage at the electrode of the power semiconductor to the voltage at the second terminal of the at least one resistor.

9. A method for sensing an over-temperature of a power semiconductor, wherein the method comprises the steps of:
applying a current pulse through control electrodes of the power semiconductor,
duplicating the current pulse and providing the duplicated current pulse to an emulating device,
comparing the voltage across the control electrodes to the voltage across the emulating device,
notifying the result of the comparison using a controller, wherein
the emulating device comprises a resistor and a capacitor connected in series, the resistor value is equal or lower than a gate resistance value of the power semiconductor when the power semiconductor is at a temperature equal to one degree Celsius less than the maximum junction temperature of the power semiconductor.

10. The method according to claim 9 , wherein the method further comprises the step of adjusting the resistor value when the power semiconductor is heated at a predetermined temperature.

11. The device according to claim 1 , wherein the equivalent circuit of the power semiconductor being composed of a gate capacitor and a resistor connected in series with the gate capacitor, and the capacitor value is equal or lower than the gate capacitance value of the power semiconductor.

12. The method according to claim 9 , wherein the equivalent circuit of the power semiconductor being composed of a gate capacitor and a resistor connected in series with the gate capacitor, and the capacitor value is equal or lower than the gate capacitance value of the power semiconductor.

13. The method according to claim 1 , wherein the controller is configured to control the switching pattern of the power semiconductor according to the signal outputted by the comparator by reducing a switching speed of the switching pattern of the power semiconductor based on the comparator indicating that the resistance of the power semiconductor is greater than the resistance of the resistor.

Assignees

• Mitsubishi Electric Corp

Inventors

• Kawahara Chihiro
• Brandelero Julio
• Mollov Stefan

Classifications

• G01K2217/00

  Temperature measurement using electric or magnetic components already present in the system to be measured · CPC title

• G01K7/34

  using capacitative elements (capacitors per se H01G) · CPC title

• G01K7/183

  characterised by the use of the resistive element · CPC title

• G01K3/005 Primary

  Circuits arrangements for indicating a predetermined temperature (fire detection G08B17/00) · CPC title