Methods and devices for growing oxide crystals in oxygen atmosphere

Patent metadata

Field	Value
Publication number	US-12416096-B2
Application number	US-202318494746-A
Country	US
Kind code	B2
Filing date	Oct 25, 2023
Priority date	Aug 21, 2019
Publication date	Sep 16, 2025
Grant date	Sep 16, 2025

Abstract

The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.

First claim

What is claimed is:

1. A crystal, a formula of the crystal being (A 1-b B b ) 3 (P 1-q Q q ) 5 O 12 , wherein:
A consists of at least one of Gd, Lu, La, Yb, Sc, or Y;
B consists of at least one of Na, K, V, Mn, Fe, Co, Ni, Ti, Ge, Zr, or Hf;
P consists of at least one of Al, Ga, In, or Sc;
Q consists of Al;
b=0.2˜0.9; and
q=0˜1.

2. The crystal of claim 1 , wherein b=0.3˜0.8.

3. The crystal of claim 1 , wherein b=0.4˜0.7.

4. The crystal of claim 1 , wherein b=0.5˜0.6.

5. The crystal of claim 1 , wherein b=0.52˜0.58.

6. The crystal of claim 1 , wherein b=0.54˜0.56.

7. The crystal of claim 1 , wherein q=0.2˜0.9.

8. The crystal of claim 1 , wherein q=0.3˜0.8.

9. The crystal of claim 1 , wherein q=0.4˜0.7.

10. The crystal of claim 1 , wherein q=0.5˜0.6.

11. The crystal of claim 1 , wherein q=0.52˜0.58.

12. The crystal of claim 1 , wherein q=0.54˜0.56.

13. A method for growing a crystal, wherein:
a formula of the crystal is (A 1-b B b ) 3 (P 1-q Q q ) 5 O 12 , wherein:
A consists of at least one of Gd, Lu, La, Yb, Sc, or Y;
B consists of at least one of Na, K, Zn, V, Mn, Fe, Co, Ni, Ti, Ge, Zr, or Hf;
P consists of at least one of Al, Ga, In, or Sc;
Q consists of Al;
b=0.2˜0.9; and
q=0˜1; and

the method comprises:
weighing reactants based on a molar ratio of the reactants according to a reaction equation for generating the crystal;
placing the reactants into a crystal growth device;
introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and
operating the crystal growth device to execute a crystal growth operation based on Czochralski technique.

14. The method of claim 13 , wherein P consists of Ga, and a weight range of a reactant containing Ga is 0.01%˜10% in excess of a theoretical weight value of the reactant consisting of Ga calculated according to the reaction equation.

Assignees

• Meishan Boya Advanced Mat Co Ltd

Inventors

• Wang Yu
• Guan Weiming
• Li Min

Classifications

• C01F17/00

  Compounds of rare earth metals · CPC title

• C30B15/02

  adding crystallising materials or reactants forming it in situ to the melt · CPC title

• C01B33/20 Primary

  Silicates (persilicates C01B15/14 {; containing aluminium C01B33/26}) · CPC title

• C01P2002/52

  containing elements as dopants · CPC title

• C01B33/10

  Compounds containing silicon, fluorine, and other elements · CPC title