Signal processing circuit for tunneling magnetoresistance sensor

Patent metadata

Field	Value
Publication number	US-12411188-B2
Application number	US-202318540872-A
Country	US
Kind code	B2
Filing date	Dec 15, 2023
Priority date	Apr 10, 2023
Publication date	Sep 9, 2025
Grant date	Sep 9, 2025

Abstract

A signal processing circuit for a tunneling magnetoresistance sensor comprises thirty-eight MOS transistors, two capacitors and ten switches. A first switch, a second switch, a third switch, a fourth switch, a first MOS transistor, a second MOS transistor, a third MOS transistor and a fourth MOS transistor form a high-frequency modulation circuit. A fifth switch, a sixth switch, a seventh switch, an eighth switch, a seventeenth transistor, a twenty-second MOS transistor and a twenty-third MOS transistor form a high-frequency demodulation circuit. A signal output by a tunneling magnetoresistance sensor is modulated to a chopping frequency by the high-frequency modulation circuit, and is then demodulated by the high-frequency demodulation circuit.

First claim

What is claimed is:

1. A signal processing circuit for a tunneling magnetoresistance sensor, wherein the signal processing circuit comprises a first metal-oxide-semiconductor (MOS) transistor, a second MOS transistor, a third MOS transistor, a fourth MOS transistor, a fifth MOS transistor, a sixth MOS transistor, a seventh MOS transistor, an eighth MOS transistor, a ninth MOS transistor, a tenth MOS transistor, an eleventh MOS transistor, a twelfth MOS transistor, a thirteenth MOS transistor, a fourteenth MOS transistor, a fifteenth MOS transistor, a sixteenth MOS transistor, a seventeenth MOS transistor, an eighteenth MOS transistor, a nineteenth MOS transistor, a twentieth MOS transistor, a twenty-first MOS transistor, a twenty-second MOS transistor, a twenty-third MOS transistor, a thirtieth MOS transistor, a thirty-first MOS transistor, a thirty-second MOS transistor, a thirty-third MOS transistor, a thirty-fourth MOS transistor, a thirty-fifth MOS transistor, a thirty-sixth MOS transistor, a thirty-seventh MOS transistor, a thirty-eighth MOS transistor, a first capacitor, a second capacitor and ten switches, wherein the ten switches are all analog switches, each switch has two connecting terminals which are referred to as a first connecting terminal and a second connecting terminal respectively and two clock control terminals which are referred to as a first clock terminal and a second clock terminal respectively, the ten switches are referred to a first switch, a second switch, a third switch, a fourth switch, a fifth switch, a sixth switch, a seventh switch, an eighth switch, a ninth switch and a tenth switch respectively, the first MOS transistor, the second MOS transistor, the third MOS transistor, the fourth MOS transistor, the fifth MOS transistor, the sixth MOS transistor, the seventh MOS transistor, the eleventh MOS transistor, the twelfth MOS transistor, the thirteenth MOS transistor, the fourteenth MOS transistor, the fifteenth MOS transistor, the sixteenth MOS transistor, the seventeenth MOS transistor, the eighteenth MOS transistor, the nineteenth MOS transistor, the thirtieth MOS transistor, the thirty-first MOS transistor, the thirty-second MOS transistor, the thirty-third MOS transistor, the thirty-fifth MOS transistor and the thirty-seventh MOS transistor are all PMOS transistors, and the eighth MOS transistor, the ninth MOS transistor, the tenth MOS transistor, the twentieth MOS transistor, the twenty-first MOS transistor, the twenty-second MOS transistor, the twenty-third MOS transistor, the thirty-fourth MOS transistor, the thirty-sixth MOS transistor and the thirty-eighth MOS transistor are all NMOS transistors; the first connecting terminal of the first switch and the first connecting terminal of the second switch are connected and a connecting terminal thereof is a positive input terminal Vin+ of the signal processing circuit and is connected to a positive output terminal of the tunneling magnetoresistance sensor, the first connecting terminal of the third switch and the first connecting terminal of the fourth switch are connected and a connecting terminal thereof is a negative input terminal Vin− of the signal processing circuit and is connected to a negative output terminal of the tunneling magnetoresistance sensor, the second connecting terminal of the first switch, the second connecting terminal of the third switch, a gate of the first MOS transistor and a gate of the third MOS transistor are connected, the second connecting terminal of the second switch, the second connecting terminal of the fourth switch, a gate of the second MOS transistor and a gate of the fourth MOS transistor are connected, a drain of the first MOS transistor and a source of the third MOS transistor are connected, a drain of the second MOS transistor and a source of the fourth MOS transistor are connected, a drain of the third MOS transistor and a gate of the ninth MOS transistor are connected, a drain of the fourth MOS transistor and gate of the tenth MOS transistor are connected, a source of the first MOS transistor, a source of the second MOS transistor and a drain of the sixth MOS transistor are connected, a source of the sixth MOS transistor and a drain of the fifth MOS transistor are connected, a source of the fifth MOS transistor, a source of the eleventh MOS transistor, a source of the twelfth MOS transistor, a source of the fifteenth MOS transistor, a source of the eighteenth MOS transistor, a source of the nineteenth MOS transistor, a source of the seventh MOS transistor, a source of the thirtieth MOS transistor and a source of the thirty-first MOS transistor are connected and a connecting terminal thereof allows a supply voltage VCC accessed thereto, a source of the ninth MOS transistor, a source of the tenth MOS transistor, a source of the twenty-second MOS transistor, a source of the twenty-third MOS transistor, a gate of the eighth MOS transistor, a source of the eighth MOS transistor and one terminal of the second capacitor are connected and a connecting terminal thereof is a negative output terminal Vout− of the signal processing circuit and is connected to a ground GND, a drain of the ninth MOS transistor, a drain of the thirteenth MOS transistor, a gate of the thirteenth MOS transistor, a gate of the fourteenth MOS transistor, the first connecting terminal of the fifth switch and the first connecting terminal of the sixth switch are connected, a drain of the tenth MOS transistor, a drain of the fourteenth MOS transistor, the first connecting terminal of the seventh switch and the first connecting terminal of the eighth switch are connected, a source of the thirteenth MOS transistor, a drain of the eleventh MOS transistor and the first connecting terminal of the ninth switch are connected, a source of the fourteenth MOS transistor, a drain of the twelfth MOS transistor and the first connecting terminal of the tenth switch are connected, the second connecting terminal of the ninth switch, the second connecting terminal of the tenth switch, a gate of the eleventh MOS transistor and a gate of the twelfth MOS transistor are connected, the second connecting terminal of the fifth switch, the second connecting terminal of the seventh switch, a gate of the sixteenth MOS transistor and the other terminal of the second capacitor are connected, the second connecting terminal of the sixth switch, the second connecting terminal of the eighth switch and a gate of the seventeenth MOS transistor are connected, a source of the sixteenth MOS transistor, a source of the seventeenth MOS transistor and a drain of the fifth MOS transistor are connected, a drain of the sixteenth MOS transistor, a drain of the twenty-second MOS transistor and a source of the twentieth MOS transistor are connected, a drain of the seventeenth MOS transistor and one terminal of the first capacitor are connected, a gate of the fifth MOS transistor, a gate of the fifteenth MOS transistor, a drain of the eighteenth MOS transistor, a drain of the twentieth MOS transistor, a gate of the eighteenth MOS transistor, a gate of the nineteenth MOS transistor, a gate of the thirtieth MOS transistor, a gate of the thirtieth-first MOS transistor, a drain of the thirtieth-second MOS transistor and a source of the thirtieth-fifth MOS transistor are connected, a gate of the sixth MOS transistor, a gate of the twentieth MOS transistor, a gate of the twenty-first MOS transistor, a gate of the thirty-second MOS transistor, a gate of the thirty-third MOS transistor, a drain of the thirty-fifth MOS transistor and a source of the thirty-seventh MOS transistor are connected, a drain of the nineteenth MOS transistor, a drain of the twenty-first MOS transistor and a gate of the seventh MOS transistor are connected, the other terminal of the first capacitor, a drain of the seventh MOS transistor and a drain of the eighth MOS transistor are connected and a connecting terminal thereof i

Assignees

• Univ Wenzhou

Inventors

• Wang Pengjun
• Li Xiangyu
• Chen Bo
• Ye Hao

Classifications

• G01R33/098 Primary

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• G01R33/0029 Primary

  Treating the measured signals, e.g. removing offset or noise · CPC title