Pressure sensor chip, pressure transmitter, and method for manufacturing pressure sensor chip
US-2018275001-A1 · Sep 27, 2018 · US
US12411000B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12411000-B2 |
| Application number | US-202117907567-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 26, 2021 |
| Priority date | Mar 30, 2020 |
| Publication date | Sep 9, 2025 |
| Grant date | Sep 9, 2025 |
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A strain gauge includes a flexible resin substrate and a resistor formed of a film that includes Cr, CrN, and Cr2N, the resistor being situated on or above the substrate. A film thickness of the resistor is greater than or equal to 100 nm and less than or equal to 700 nm.
Opening claim text (preview).
The invention claimed is: 1. A strain gauge comprising: a flexible resin substrate; and a resistor formed of a film that includes a composite film of Cr, CrN, and Cr 2 N, the resistor being situated on or above the substrate, wherein a film thickness of the resistor is greater than or equal to 100 nm and less than or equal to 700 nm, and each of a creep amount and a creep recovery amount of a weighing instrument including the strain gauge is within ±0.0735% when measured with the weighing instrument according to International Organization of Legal Metrology (OIML) R60. 2. The strain gauge according to claim 1 , wherein the film thickness of the resistor is greater than or equal to 150 nm and less than or equal to 500 nm. 3. The strain gauge according to claim 2 , wherein the film thickness of the resistor is greater than or equal to 250 nm and less than or equal to 400 nm. 4. The strain gauge according to claim 1 , wherein a film thickness of the substrate is greater than or equal to 10 μm and less than or equal to 130 μm. 5. The strain gauge according to claim 4 , wherein the film thickness of the substrate is greater than or equal to 10 μm and less than or equal to 100 μm. 6. The strain gauge according to claim 5 , wherein the film thickness of the substrate is greater than or equal to 30 μm and less than or equal to 70 μm. 7. The strain gauge according to claim 1 , wherein a material of the substrate is polyimide. 8. The strain gauge according to claim 1 , wherein a gauge factor is 10 or more. 9. The strain gauge according to claim 1 , wherein CrN and Cr 2 N included in the resistor are at 20% by weight or less. 10. The strain gauge according to claim 1 , wherein a percentage of Cr 2 N in the CrN and Cr 2 N is greater than or equal to 80% by weight and less than 90% by weight.
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