Thermal inkjet printhead, a printing assembly comprising the thermal inkjet printhead and a printing apparatus comprising the thermal inkjet printhead
US-12083798-B2 · Sep 10, 2024 · US
Thermal inkjet printhead stack with amorphous metal resistor
US2016114584A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016114584-A1 |
| Application number | US-201314787729-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 12, 2013 |
| Priority date | Jul 12, 2013 |
| Publication date | Apr 28, 2016 |
| Grant date | — |
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Abstract
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The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous metal resistor, including an insulated substrate and a resistor applied to the insulated substrate. The resistor can include from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron; and from 5 atomic % to 90 atomic % each of a first and second metal of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum, where the second metal is different than the first metal. The metalloid, the first metal, and the second metal can account for at least 70 atomic % of the amorphous thin metal film.
First claim
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What is claimed is: 1 . A thermal inkjet printhead stack with an amorphous metal resistor, comprising: an insulated substrate; a resistor applied to the insulated substrate, the resistor comprising an amorphous layer of: 5 atomic % to 90 atomic % of a metalloid, wherein the metalloid is carbon, silicon, or boron, 5 atomic % to 90 atomic % of a first metal, wherein the first metal is titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palla…
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Operations & Transport · mapped topic
Operations & Transport · mapped topic
- B41J2/14129Primary
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
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- What does patent US2016114584A1 cover?
- The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous metal resistor, including an insulated substrate and a resistor applied to the insulated substrate. The resistor can include from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron; and from 5 atomic % to 90 atomic % each of a first and second metal of titanium, vanadium, chromium, cobalt, n…
- Who is the assignee on this patent?
- Hewlett Packard Development Co
- What technology area does this patent fall under?
- Primary CPC classification B41J2/14129. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Thu Apr 28 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).