Fabrication process for flexible single-crystal perovskite devices

Patent metadata

Field	Value
Publication number	US-12410537-B2
Application number	US-202118010335-A
Country	US
Kind code	B2
Filing date	Jun 24, 2021
Priority date	Jun 25, 2020
Publication date	Sep 9, 2025
Grant date	Sep 9, 2025

Abstract

A method of fabricating an ionic crystal includes providing a single crystal substrate of an ionic crystal material is provided. A patterned mask is applied over the single crystal substrate A growth solution is introduced over the single crystal substrate. The growth solution includes precursors for epitaxial growth of the ionic crystal material on the single crystal substrate such that epitaxial crystals grow over time through pattern openings in the patterned mask into a crystal structure with one or more morphologies.

First claim

The invention claimed is:

1. A method of fabricating an ionic crystal, comprising:
providing a single crystal substrate of an ionic crystal material;
applying a patterned mask over the single crystal substrate;
introducing a growth solution over the single crystal substrate, the growth solution including precursors for epitaxial growth of the ionic crystal material on the single crystal substrate such that epitaxial crystals grow over time through pattern openings in the patterned mask into a crystal structure with one or more morphologies;
removing from the growth solution the patterned mask and the crystal structure grown on the substrate as an assembled unit; and
detaching the single crystal substrate from the patterned mask and the crystal structure so that a subassembly of the patterned mask and the crystal structure remains;
applying an antisolvent to a surface of the second substrate or a surface of the crystal structure prior to transferring and
transferring the subassembly onto a second substrate.

2. The method of claim 1 further comprising removing the patterned mask from the subassembly so that the crystal structure remains attached to the second substrate.

3. The method of claim 1 further comprising applying a layer of the growth solution onto a surface of the second substrate prior to the transferring.

4. The method of claim 3 further comprising heating the second substrate after the transferring to facilitate a secondary re-growth process of crystals from the growth solution.

5. The method of claim 1 further comprising changing a concentration of the precursors in the growth solution while the crystal structure is growing to thereby form a compositionally graded crystal structure.

6. The method of claim 5 wherein the concentration of the precursors is continuously changed during at least a portion of time that the crystal structure is growing.

7. The method of claim 1 wherein the ionic crystal material includes a perovskite.

8. The method of claim 7 wherein the perovskite includes an organic-inorganic hybrid perovskite.

9. The method of claim 1 further comprising adjusting a rate of growth of the crystals in different directions by adjusting a growth capping agent, growth temperature, and/or a concentration of the precursors.

10. The method of claim 1 wherein the growth solution is a supersaturated growth solution.

11. The method of claim 1 wherein the patterned mask is formed from a polymer or metal.

12. The method of claim 1 wherein the patterned mask is flexible.

13. The method of claim 1 wherein the patterned mask is rigid.

14. The method of claim 1 wherein the one or more morphologies of the crystal structure are selected from the group consisting of a thin film, a cubic structure and a pyramidal structure.

15. A method of fabricating an ionic crystal, comprising:
providing a single crystal substrate of an ionic crystal material;
applying a patterned mask over the single crystal substrate;
introducing a growth solution over the single crystal substrate, the growth solution including precursors for epitaxial growth of the ionic crystal material on the single crystal substrate such that epitaxial crystals grow over time through pattern openings in the patterned mask into a crystal structure with one or more morphologies;
changing a concentration of the precursors in the growth solution while the crystal structure is growing to thereby form a compositionally graded crystal structure; and
removing from the growth solution the patterned mask and the crystal structure grown on the substrate as an assembled unit.

16. A method of fabricating an ionic crystal, comprising:
providing a single crystal substrate of an ionic crystal material;
applying a patterned mask over the single crystal substrate, wherein the patterned mask is rigid;
introducing a growth solution over the single crystal substrate, the growth solution including precursors for epitaxial growth of the ionic crystal material on the single crystal substrate such that epitaxial crystals grow over time through pattern openings in the patterned mask into a crystal structure with one or more morphologies; and
removing from the growth solution the patterned mask and the crystal structure grown on the substrate as an assembled unit.

Assignees

• Univ California

Inventors

• Xu Sheng
• Lei Yusheng
• Chen Yimu

Classifications

• C30B29/12 Primary

  Halides · CPC title

• C30B7/005

  Epitaxial layer growth · CPC title

• C30B7/06 Primary

  using non-aqueous solvents · CPC title