Etching gas composition, substrate processing apparatus, and pattern forming method using the etching gas composition

Patent metadata

Field	Value
Publication number	US-12410368-B2
Application number	US-202318336070-A
Country	US
Kind code	B2
Filing date	Jun 16, 2023
Priority date	Jun 21, 2022
Publication date	Sep 9, 2025
Grant date	Sep 9, 2025

Abstract

An etching gas composition includes at least two C3 or C4 organic fluorine compounds and niobium fluoride, and the at least two C3 or C4 organic fluorine compounds are isomers.

First claim

What is claimed is:

1. An etching gas composition comprising:
at least two C 3 or C 4 organic fluorine compounds; and
niobium fluoride,
wherein the at least two C 3 or C 4 organic fluorine compounds are isomers, and wherein the niobium fluoride is included in an amount of about 1 part by volume to about 5 parts by volume based on 100 parts by volume of the etching gas composition.

2. The etching gas composition of claim 1 , wherein at least two C 3 or C 4 organic fluorine compounds each have a formula of C 3 H 2 F 6 .

3. The etching gas composition of claim 1 , wherein the niobium fluoride has a formula of NbF 5 .

4. The etching gas composition of claim 1 , wherein the at least two C 3 or C 4 organic fluorine compounds each have a formula of C 4 H 2 F 6 .

5. The etching gas composition of claim 1 , further comprising an inert gas and a reactive gas,
wherein the inert gas is selected from among argon (Ar), helium (He), neon (Ne), and any mixture thereof.

6. The etching gas composition of claim 5 , wherein the reactive gas is oxygen gas (O 2 ).

7. The etching gas composition of claim 1 , wherein the at least two C 3 or C 4 organic fluorine compounds are selected from among 1,1,1,3,3,3-hexafluoropropane, 1,1,1,2,3,3-hexafluoropropane, and 1,1,2,2,3,3-hexafluoropropane.

8. The etching gas composition of claim 7 , wherein the at least two C 3 or C 4 organic fluorine compounds comprise a first organic fluorine compound and a second organic fluorine compound,
the first organic fluorine compound is 1,1,1,2,3,3-hexafluoropropane, and
the second organic fluorine compound is selected from among 1,1,1,3,3,3-hexafluoropropane and 1,1,2,2,3,3-hexafluoropropane.

9. The etching gas composition of claim 7 , wherein the at least two C 3 or C 4 organic fluorine compounds comprise a first organic fluorine compound and a second organic fluorine compound,
the first organic fluorine compound is 1,1,1,3,3,3-hexafluoropropane, and
the second organic fluorine compound is 1,1,2,2,3,3-hexafluoropropane.

10. The etching gas composition of claim 1 , wherein the at least two C 3 or C 4 organic fluorine compounds are selected from among hexafluoroisobutene, (2Z)-1,1,1,4,4,4-hexafluoro-2-butene, 2,3,3,4,4,4-hexafluoro-1-butene, (2Z)-1,1,1,2,4,4-hexafluoro-2-butene, (2Z)-1,1,2,3,4,4-hexafluoro-2-butene, 1,1,2,3,4,4-hexafluoro-2-butene, (3R, 4S)-1,1,2,2,3,4-hexafluorocyclobutane, and 1,1,2,2,3,3-hexafluorocyclobutane.

11. The etching gas composition of claim 10 , wherein the at least two C 3 or C 4 organic fluorine compounds are a first organic fluorine compound and a second organic fluorine compound and the etching gas composition further comprises a third organic fluorine compound and a fourth organic fluorine compound,
the third organic fluorine compound is (2Z)-1,1,1,4,4,4-hexafluoro-2-butene, and
the fourth organic fluorine compound is selected from among hexafluoroisobutene and (3R, 4S)-1,1,2,2,3,4-hexafluorocyclobutane.

12. The etching gas composition of claim 10 , wherein the at least two C 3 or C 4 organic fluorine compounds are a first organic fluorine compound and a second organic fluorine compound and the etching gas composition further comprises a third organic fluorine compound and a fourth organic fluorine compound,
the third organic fluorine compound is hexafluoroisobutene, and
the fourth organic fluorine compound is (3R, 4S)-1,1,2,2,3,4-hexafluorocyclobutane.

13. A substrate processing apparatus comprising:
a chamber having a processing space in which substrate processing is performed;
a gas supply device configured to supply an etching gas composition to the processing space; and
a substrate support device disposed in the processing space and configured to support a substrate,
wherein the etching gas composition comprises at least two C 3 or C 4 organic fluorine compounds and niobium fluoride, and
the at least two C 3 or C 4 organic fluorine compounds are isomers, and wherein the niobium fluoride is included in an amount of about 1 part by volume to about 5 parts by volume based on 100 parts by volume of the etching gas composition.

14. The substrate processing apparatus of claim 13 , further comprising a shower head disposed above the substrate and having a plurality of gas supply holes.

15. A pattern forming method comprising:
forming a layer to be etched on a substrate;
forming an etching mask on the layer to be etched;
etching the layer to be etched through the etching mask by using plasma obtained from an etching gas composition; and
removing the etching mask,
wherein the etching gas composition comprises at least two C 3 or C 4 organic fluorine compounds and niobium fluoride, and
the at least two C 3 or C 4 organic fluorine compounds are isomers, and wherein the niobium fluoride is included in an amount of about 1 part by volume to about 5 parts by volume based on 100 parts by volume of the etching gas composition.

16. The pattern forming method of claim 15 , wherein the etching mask is at least one selected from among a photoresist (PR), a spin-on hardmask (SOH), and an amorphous carbon layer (ACL).

17. The pattern forming method of claim 15 , wherein the layer to be etched comprises at least one of silicon nitride or silicon oxide.

18. The pattern forming method of claim 15 , wherein a plasma source for obtaining the plasma is one of an inductively coupled plasma (ICP) or a capacitively coupled plasma (CCP).

Assignees

• Semes Co Ltd

Inventors

• MIN Kyungseok
• An Sukjune
• Shin Donggung

Classifications

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P72/0421 Primary

  for drying etching · CPC title

• H10B43/27

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title

• C09K13/00 Primary

  Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) · CPC title