Device with dielectric metal oxide layers and semiconductor apparatus including the same

Patent metadata

Field	Value
Publication number	US-12408353-B2
Application number	US-202117552680-A
Country	US
Kind code	B2
Filing date	Dec 16, 2021
Priority date	Aug 23, 2021
Publication date	Sep 2, 2025
Grant date	Sep 2, 2025

Abstract

Provided are a semiconductor device and a semiconductor apparatus including the same, the semiconductor device including: a first electrode; a second electrode apart from the first electrode; a dielectric structure provided between the first electrode and the second electrode and including a dielectric layer including a metal oxide represented by MxOy; and a leakage current reducing layer including a metal oxide represented by Lay′M′y′Oz′.

First claim

What is claimed is:

1. An electronic component comprising:
a first electrode;
a second electrode apart from the first electrode; and
a dielectric structure between the first electrode and the second electrode, the dielectric structure including
a dielectric layer including a metal oxide represented by M x O y , where M is at least one of Ca, Sr, Ba, Sc, Y, La, Ti, Zr, Hf, Nb, Ta, Ce, Pr, Nd, Gd, Dy, Yb, or Lu, and
a leakage current reducing layer including a metal oxide represented by La x ′M′ y ′O z ′, where M′ is at least one of Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, Nb, Ta, Ce, Pr, Nd, Gd, Dy, Yb, or Lu,

wherein a thickness of the leakage current reducing layer is within a range of 0.1 Å to 4.5 Å.

2. The electronic component of claim 1 , wherein
the dielectric layer comprises first and second dielectric layers, and
the leakage current reducing layer is between the first dielectric layer and the second dielectric layer.

3. The electronic component of claim 1 , wherein the leakage current reducing layer is between the first electrode and the dielectric layer.

4. The electronic component of claim 1 , wherein the leakage current reducing layer is between the second electrode and the dielectric layer.

5. The electronic component of claim 1 , wherein a total thickness of the dielectric structure is about 50 Å or less.

6. The electronic component of claim 1 , wherein the dielectric layer has at least one of a single-layer structure.

7. The electronic component of claim 1 , wherein the dielectric layer has a multi-layer structure in which different materials are stacked.

8. The electronic component of claim 1 , wherein each of the first and second electrodes comprises at least one of W, TaN, TiN, RuO 1-3 , NbN, Sc, Al, Mo, MON, Pd, Pt, Sn, La, or Ru.

9. The electronic component of claim 1 , wherein one of the first and second electrodes comprises a semiconductor material.

10. A semiconductor apparatus comprising:
a field effect transistor; and
a capacitor electrically connected to the field effect transistor, the capacitor comprising
a first electrode,
a second electrode apart from the first electrode, and
a dielectric structure between the first electrode and the second electrode, the dielectric structure including
a dielectric layer including a metal oxide represented by M x O y , where M is at least one of Ca, Sr, Ba, Sc, Y, La, Ti, Zr, Hf, Nb, Ta, Ce, Pr, Nd, Gd, Dy, Yb, and Lu, and
a leakage current reducing layer including a metal oxide represented by La x M′ y ′O z ′, where M′ is at least one of Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, Nb, Ta, Ce, Pr, Nd, Gd, Dy, Yb, and Lu,

wherein a thickness of the leakage current reducing layer is within a range of 0.1 Å to 4.5 Å.

11. The semiconductor apparatus of claim 10 , wherein the field effect transistor comprises:
a channel layer between a source and a drain;
a gate layer on the channel layer; and
a gate electrode on the gate layer.

12. The semiconductor apparatus of claim 10 , wherein
the dielectric layer comprises first and second dielectric layers, and
the leakage current reducing layer is between the first dielectric layer and the second dielectric layer.

13. The semiconductor apparatus of claim 10 , wherein the leakage current reducing layer is between the dielectric layer and at least one of the first electrode or the second electrode.

14. The semiconductor apparatus of claim 10 ,
wherein a total thickness of the dielectric structure is about 50 Å or less.

15. The semiconductor apparatus of claim 10 ,
wherein each of the first and second electrodes comprises at least one of W, TaN, TiN, RuO 1-3 , NbN, Sc, Al, Mo, MON, Pd, Pt, Sn, La, or Ru.

16. An electronic device comprising a plurality of the semiconductor apparatus of claim 10 .

Assignees

• Samsung Electronics Co Ltd

Inventors

• Han Narae
• Song Jeonggyu
• Kim Yongsung
• Lee Jooho
• Cho Eunae

Classifications

• H10D84/403

  Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors · CPC title

• H10B12/34

  the transistor being at least partially in a trench in the substrate · CPC title

• H10B12/315

  with the capacitor higher than a bit line · CPC title

• H10D1/692 Primary

  Electrodes · CPC title

• H10B12/30

  DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells · CPC title