Structure with photodiode, high electron mobility transistor, surface acoustic wave device and fabricating method of the same

Patent metadata

Field	Value
Publication number	US-12406973-B2
Application number	US-202218077192-A
Country	US
Kind code	B2
Filing date	Dec 7, 2022
Priority date	Nov 10, 2022
Publication date	Sep 2, 2025
Grant date	Sep 2, 2025

Abstract

A structure with a photodiode, an HEMT and an SAW device includes a photodiode and an HEMT. The photodiode includes a first electrode and a second electrode. The first electrode contacts a P-type III-V semiconductor layer. The second electrode contacts an N-type III-V semiconductor layer. The HEMT includes a P-type gate disposed on an active layer. A gate electrode is disposed on the P-type gate. Two source/drain electrodes are respectively disposed at two sides of the P-type gate. Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate. Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, and between one of the two source/drain electrodes and the active layer and between the other one of two source/drain electrodes and the active layer.

First claim

What is claimed is:

1. A structure with a photodiode, a high electron mobility transistor (HEMT) and a surface acoustic wave (SAW) device, comprising: a photodiode, comprising:
a first III-V semiconductor layer;
a first N-type III-V semiconductor layer disposed on and contacting the first III-V semiconductor layer;
a multi-quantum well (MQW) layer disposed on and contacting the first N-type III-V semiconductor layer;
a second III-V semiconductor layer disposed on and contacting the MQW layer;
a P-type III-V semiconductor layer disposed on and contacting the second III-V semiconductor layer;
a first electrode disposed on and contacting the P-type III-V semiconductor layer; and
a second electrode disposed on and contacting the first N-type III-V semiconductor layer;

an HEMT comprising:
a channel layer;
an active layer disposed on the channel layer;
a P-type gate disposed on the active layer;
a gate electrode disposed on and contacting the P-type gate; and
two source/drain electrodes respectively disposed at two sides of the P-type gate, wherein the two source/drain electrodes are embedded within the active layer and the channel layer;

wherein Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate, Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, between one of the two source/drain electrodes and the active layer and between the other one of two source/drain electrodes and the active layer.

2. The structure with a photodiode, an HEMT and an SAW device of claim 1 , further comprising:
an SAW device, wherein the SAW device comprises:
a piezoelectric layer;
an interdigital transducer disposed on and contacting the piezoelectric layer;
wherein Schottky contact is between the interdigital transducer and the piezoelectric layer.

3. The structure with a photodiode, an HEMT and an SAW device of claim 1 , further comprising two second N-type III-V semiconductor layers embedded within the channel layer, and each of the two second N-type III-V semiconductor layers respectively contacting one of the two source/drain electrodes.

4. The structure with a photodiode, an HEMT and an SAW device of claim 3 , wherein the first III-V semiconductor layer and the two second N-type III-V semiconductor layers are made of the same material.

5. The structure with a photodiode, an HEMT and an SAW device of claim 4 , wherein the first III-V semiconductor layer and the two second N-type III-V semiconductor layers are made of N-type gallium nitride.

6. The structure with a photodiode, an HEMT and an SAW device of claim 1 , wherein the P-type III-V semiconductor layer and the P-type gate are made of the same material.

7. The structure with a photodiode, an HEMT and an SAW device of claim 6 , wherein the P-type III-V semiconductor layer and the P-type gate are made of P-type gallium nitride.

8. The structure with a photodiode, an HEMT and an SAW device of claim 1 , wherein the two source/drain electrodes and the second electrode are made of the same material.

9. The structure with a photodiode, an HEMT and an SAW device of claim 8 , wherein the two source/drain electrodes and the second electrode are made of ohmic metal, and the ohmic metal comprises Ti/Al/TiN, Si/Ti/Al/TiN, Si/Ti/Ta/Al/TiN or Si/Ti/Al/Ti/Au.

10. The structure with a photodiode, an HEMT and an SAW device of claim 2 , wherein the first electrode, the gate electrode and the interdigital transducer are made of the same material.

11. The structure with a photodiode, an HEMT and an SAW device of claim 2 , wherein the first electrode, the gate electrode and the interdigital transducer are made of Schottky metal and the Schottky metal comprises TIN/Al/TIN, Ni/Au, W/Au or Ni/Ag.

Assignees

• United Microelectronics Corp

Inventors

• Lin da-jun
• Chang Chih-Wei
• Tsai Fu-Yu
• Tsai Bin-Siang
• Chiu Chung-Yi

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10D64/258

  characterised by the relative positions of the source or drain electrodes with respect to the gate electrode · CPC title

• H10D64/64

  Electrodes comprising a Schottky barrier to a semiconductor · CPC title

• H10D64/01

  Manufacture or treatment · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title