High temperature micro-zone electrostatic chuck
US-11482444-B2 · Oct 25, 2022 · US
US12400896B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12400896-B2 |
| Application number | US-202318201332-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 24, 2023 |
| Priority date | May 24, 2023 |
| Publication date | Aug 26, 2025 |
| Grant date | Aug 26, 2025 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A device includes a first plate including a first dielectric material and having a first set of electrodes embedded therein, a second plate including a second dielectric material and having a second set of electrodes embedded therein, and an inorganic dielectric bond including an inorganic dielectric material disposed between the first plate and the second plate. The first plate and the second plate are disposed on a base structure.
Opening claim text (preview).
What is claimed is: 1. A substrate support assembly, comprising: a substrate support comprising: a first plate comprising a first dielectric material and having a first set of electrodes embedded therein; a second plate comprising the first dielectric material or a second dielectric material and having a second set of electrodes embedded therein; and an inorganic dielectric bond comprising an inorganic dielectric material disposed between the first plate and the second plate. 2. The substrate support assembly of claim 1 , wherein at least one of the first dielectric material or the second dielectric material is a ceramic material. 3. The substrate support assembly of claim 1 , wherein the first plate is an electrostatic chuck (ESC) plate and the first set of electrodes comprises a set of chucking electrodes, and wherein the second plate is a heater plate comprising a set of heating electrodes. 4. The substrate support assembly of claim 3 , the substrate support further comprising: a third plate comprising a second set of heating electrodes; and a bond disposed between the second plate and the third plate. 5. The substrate support assembly of claim 4 , wherein the bond is a second inorganic dielectric bond comprising a second inorganic dielectric material. 6. The substrate support assembly of claim 1 , wherein the first plate is a first heater plate and the first set of electrodes comprises a first set of heater electrodes, and wherein the second plate is a second heater plate and the second set of electrodes comprises a second set of heater electrodes. 7. The substrate support assembly of claim 6 , wherein: the first plate is a first one of: a primary heater plate comprising a set of primary heating electrodes to enable primary heating across multiple zones; or a secondary heater plate comprising a set of secondary heating electrodes to enable secondary heating across multiple sub-zones; and the second plate is a second one of: the secondary heater plate or the primary heater plate. 8. The substrate support assembly of claim 1 , wherein the inorganic dielectric material is different from the first dielectric material and the second dielectric material. 9. The substrate support assembly of claim 1 , wherein the inorganic dielectric material comprises a ceramic or glass comprising at least one of: Al, Si, Ba, Ca, Y, Mg, F, N, O or B. 10. The substrate support assembly of claim 1 , further comprising a cooling plate coupled to the substrate support, the cooling plate comprising a set of cooling channels. 11. The substrate support assembly of claim 1 , further comprising a shaft coupled to the substrate support. 12. A processing chamber comprising: a substrate support assembly comprising a substrate support coupled to a cooling plate comprising a set of cooling channels, the substrate support comprising: a first plate comprising a first dielectric material and having a first set of electrodes embedded therein; a second plate comprising the first dielectric material or a second dielectric material and having a second set of electrodes embedded therein; and an inorganic dielectric bond comprising an inorganic dielectric material disposed between the first plate and the second plate. 13. The processing chamber of claim 12 , wherein the first plate is an electrostatic chuck (ESC) plate and the first set of electrodes comprises a set of chucking electrodes, and wherein the second plate a heater plate. 14. The processing chamber of claim 13 , wherein the substrate support further comprises: a third plate comprising a second set of heating electrodes; and a second inorganic dielectric bond comprising a second inorganic dielectric material disposed between the second plate and the third plate. 15. The processing chamber of claim 12 , wherein the first plate is a first heater plate and the first set of electrodes comprises a first set of heater electrodes, and wherein the second plate is a second heater plate and the second set of electrodes comprises a second set of heater electrodes. 16. The processing chamber of claim 14 , wherein: the first plate is a first one of: a primary heater plate comprising a set of primary heating electrodes to enable primary heating across multiple zones; or a secondary heater plate comprising a set of secondary heating electrodes to enable secondary heating across multiple sub-zones; and the second plate is a second one of: the secondary heater plate or the primary heater plate. 17. The processing chamber of claim 12 , wherein the inorganic dielectric material comprises a ceramic or glass comprising at least one of: Al, Si, Ba, Ca, Y, Mg, F, N, O or B. 18. The processing chamber of claim 12 , wherein the substrate support assembly further comprises a cooling plate coupled to the substrate support, the cooling plate comprising a set of cooling channels. 19. The processing chamber of claim 12 , further comprising a shaft coupled to the substrate support. 20. A method comprising: forming a substrate support of a substrate support assembly, wherein forming the substrate support comprises bonding a first plate to a second plate using an inorganic dielectric bond comprising an inorganic dielectric material disposed between the first plate and the second plate, wherein the first plate comprises a first dielectric material having a first set of electrodes embedded therein, and wherein the second plate comprises the first dielectric material or a second dielectric material and having a second set of electrodes embedded therein; and attaching the substrate support to a base structure comprising a cooling plate having a set of cooling channels.
characterised by the mechanical construction of the susceptor, stage or support · CPC title
mainly by conduction · CPC title
Details of electrostatic chucks · CPC title
characterised by a coating, a hardness or a material · CPC title
using electrostatic chucks · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.