Substrate processing apparatus and substrate processing method

Patent metadata

Field	Value
Publication number	US-12400882-B2
Application number	US-202217878132-A
Country	US
Kind code	B2
Filing date	Aug 1, 2022
Priority date	Feb 26, 2019
Publication date	Aug 26, 2025
Grant date	Aug 26, 2025

Abstract

A substrate processing apparatus includes: a substrate holder configured to hold a substrate; a processing liquid supply part configured to supply a processing liquid to the substrate held by the substrate holder; a chemical liquid supply part configured to supply a chemical liquid as a component of the processing liquid to the processing liquid supply part; a pure water supply part configured to supply pure water as a component of the processing liquid to the processing liquid supply part; a low-dielectric constant solvent supply part configured to supply a low-dielectric constant solvent as a component of the processing liquid to the processing liquid supply part; and a controller configured to control a ratio of the chemical liquid, the pure water, and the low-dielectric constant solvent contained in the processing liquid by controlling the chemical liquid supply part, the pure water supply part, the low-dielectric constant solvent supply part.

First claim

What is claimed is:

1. A method performed by a substrate processing apparatus that comprises:
a substrate holder configured to hold a substrate;
a chemical liquid supply configured to supply a chemical liquid;
a pure water supply configured to supply pure water;
a low-dielectric constant solvent supply configured to supply a low-dielectric constant solvent;
a processing liquid supply configured to supply a processing liquid to the substrate held by the substrate holder, wherein the processing liquid supply includes:
a first mixer configured to mix the chemical liquid supplied from the chemical liquid supply with the pure water supplied from the pure water supply so as to generate a pure water-diluted chemical liquid;
a tank configured to store the pure water-diluted chemical liquid generated by the first mixer;
a circulation line through which the pure water-diluted chemical liquid flows, starting from the tank and returning to the tank;
a second mixer configured to mix the pure water-diluted chemical liquid from the circulation line with the low-dielectric constant solvent supplied from the low-dielectric constant solvent supply so as to generate the processing liquid; and
a nozzle configured to eject the processing liquid generated by the second mixer to the substrate held by the substrate holder; and

a controller configured to control a ratio of the chemical liquid, the pure water, and the low-dielectric constant solvent contained in the processing liquid by controlling the chemical liquid supply, the pure water supply, the low-dielectric constant solvent supply,
wherein the method comprises:
etching a film formed on the substrate by supplying the substrate with the processing liquid obtained by mixing the chemical liquid, the pure water, and the low-dielectric constant solvent.

2. The method of claim 1 , further comprising: supplying a rinsing liquid to the substrate, after the etching the film.

3. The method of claim 1 , wherein, in the etching the film, the chemical liquid, the pure water, and the low-dielectric constant solvent are mixed, and subsequently, ejected from the nozzle to the substrate as the processing liquid.

4. The method of claim 1 , wherein the etching the film includes:
generating the pure water-diluted chemical liquid by mixing the chemical liquid supplied from the chemical liquid supply with the pure water supplied from the pure water supply;
generating the processing liquid by mixing the pure water-diluted chemical liquid with the low-dielectric constant solvent supplied from the low-dielectric constant solvent supply; and
ejecting the processing liquid to the substrate from the nozzle.

5. The method of claim 1 , further comprising: adjusting a content of the low-dielectric constant solvent in the processing liquid so as to adjust an etching rate of the film or an etching selectivity of the film relative to another film.

Assignees

• Tokyo Electron Ltd

Inventors

• Sakurai Hiroki

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0404

  for general liquid treatment, e.g. etching followed by cleaning · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title