Multilayer electronic component having external electrode including alloy layer between base electrode layer and plating layer

Patent metadata

Field	Value
Publication number	US-12400795-B2
Application number	US-202318222087-A
Country	US
Kind code	B2
Filing date	Jul 14, 2023
Priority date	Mar 15, 2023
Publication date	Aug 26, 2025
Grant date	Aug 26, 2025

Abstract

A multilayer electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode including a base electrode layer disposed on the body and including a first metal element, and an alloy layer and a plating layer, sequentially disposed on the base electrode layer. The alloy layer includes a first alloy layer disposed to contact the base electrode layer and including an alloy of the first metal element and Sn, and a second alloy layer disposed to contact the first alloy layer and including an alloy of Ni and Sn, and the plating layer includes an Ni plating layer disposed to contact the second alloy layer.

First claim

What is claimed is:

1. A multilayer electronic component comprising:
a body including a dielectric layer and an internal electrode; and
an external electrode including a base electrode layer disposed on the body and including a first metal element, and an alloy layer and a plating layer, sequentially disposed on the base electrode layer,
wherein the alloy layer includes a first alloy layer disposed to contact the base electrode layer and including an alloy of the first metal element and Sn, and a second alloy layer disposed to contact the first alloy layer and including an alloy of Ni and Sn, and
the plating layer includes an Ni plating layer disposed to contact the second alloy layer.

2. The multilayer electronic component of claim 1 , wherein the alloy layer has the highest Sn amount on an interface between the first alloy layer and the second alloy layer.

3. The multilayer electronic component of claim 1 , wherein a first metal element amount of the first alloy layer is highest on an interface with the base electrode layer, and is lowest on an interface with the second alloy layer.

4. The multilayer electronic component of claim 1 , wherein a first metal element amount of the first alloy layer decreases from an interface with the base electrode layer toward an interface with the second alloy layer.

5. The multilayer electronic component of claim 1 , wherein a Ni amount of the second alloy layer is highest on an interface with the Ni plating layer, and is lowest on an interface with the first alloy layer.

6. The multilayer electronic component of claim 1 , wherein a Ni amount of the second alloy layer decreases from an interface with the Ni plating layer toward an interface with the first alloy layer.

7. The multilayer electronic component of claim 1 , wherein a first metal element amount of the alloy layer is highest on an interface with the base electrode layer, and is lowest on an interface with the Ni plating layer, and
a Ni amount of the alloy layer is lowest on an interface with the base electrode layer, and is highest on an interface with the Ni plating layer.

8. The multilayer electronic component of claim 1 , wherein a first metal element amount of the alloy layer decreases from an interface with the base electrode layer toward an interface with the Ni plating layer, and
a Ni amount of the alloy layer increases from an interface with the base electrode layer toward an interface with the Ni plating layer.

9. The multilayer electronic component of claim 8 , wherein a Sn amount of the alloy layer increases from an interface with the base electrode layer toward an interface between the first alloy layer and the second alloy layer, and decreases from an interface between the first alloy layer and the second alloy layer toward an interface with the Ni plating layer.

10. The multilayer electronic component of claim 1 , wherein Sn included in the alloy layer is provided as an alloy with at least one of the first metal element or Ni.

11. The multilayer electronic component of claim 1 , wherein an average thickness of the alloy layer is 0.2 μm or less.

12. The multilayer electronic component of claim 1 , wherein an average thickness of the first alloy layer and an average thickness of the second alloy layer are 0.1 μm or less, respectively.

13. The multilayer electronic component of claim 1 , wherein the first metal element is at least one of metal elements other than Ni and Sn.

14. The multilayer electronic component of claim 1 , wherein the first metal element is at least one of Cu or Ag.

15. The multilayer electronic component of claim 1 , wherein the plating layer further comprises a Sn plating layer disposed on the Ni plating layer.

16. A multilayer electronic component comprising:
a body including a dielectric layer and an internal electrode; and
an external electrode including a base electrode layer disposed on the body and including a first metal element, and an alloy layer and a Ni plating layer, sequentially disposed on the base electrode layer,
wherein the alloy layer includes an alloy of the first metal element, Sn, and Ti, and
an average thickness of the alloy layer is 0.2 μm or less.

17. The multilayer electronic component of claim 16 , the average thickness of the alloy layer is 0.01 μm or more.

18. The multilayer electronic component of claim 16 , wherein the alloy layer has the highest Sn amount in a region away from the Ni plating layer and the base electrode layer.

19. The multilayer electronic component of claim 16 , wherein the alloy layer has the highest first metal element amount on an interface with the base electrode layer and has the lowest first metal element amount on an interface with the nickel layer.

20. The multilayer electronic component of claim 16 , wherein a first metal element amount in the alloy layer decreases from an interface with the base electrode layer toward an interface with the Ni plating layer.

21. The multilayer electronic component of claim 16 , wherein the alloy layer has the highest Ni amount on an interface with the Ni plating layer and has the lowest Ni amount on an interface with the base electrode layer.

22. The multilayer electronic component of claim 16 , wherein a Ni amount in the alloy layer increases from an interface with the base electrode layer toward an interface with the Ni plating layer.

23. The multilayer electronic component of claim 16 , wherein the first metal element includes at least one of Cu or Ag.

24. The multilayer electronic component of claim 16 , wherein the alloy layer is in contact with the Ni plating layer and the base electrode layer.

25. The multilayer electronic component of claim 16 , wherein the external electrode layer further comprises a Sn plating layer disposed on the Ni plating layer.

Assignees

• Samsung Electro Mech

Inventors

• Lee Chung Yeol
• Kim Cheong
• Lee Jong Rock
• Kang Jun Il
• Okada Hiroki
• Jung Hee Jung

Classifications

• H01G4/30 Primary

  Stacked capacitors (H01G4/33 takes precedence) · CPC title

• H01G4/012

  Form of non-self-supporting electrodes · CPC title

• H01G4/232

  electrically connecting two or more layers of a stacked or rolled capacitor · CPC title

• H01G4/2325 Primary

  characterised by the material of the terminals · CPC title

• H01G4/008

  Selection of materials · CPC title