Surface treatment of semiconductor sensors

Patent metadata

Field	Value
Publication number	US-12399148-B2
Application number	US-202318475640-A
Country	US
Kind code	B2
Filing date	Sep 27, 2023
Priority date	Jul 2, 2014
Publication date	Aug 26, 2025
Grant date	Aug 26, 2025

Abstract

A sensor component includes a sensor including a sensor surface and a reaction site in cooperation with the sensor and exposing the sensor surface. The reaction site including a reaction site surface. A surface agent is bound to the reaction site surface or the sensor surface. The surface agent includes a surface active functional group reactive with Bronsted base or Lewis acid functionality on the reaction site surface or the sensor surface and including distal functionality that does not have a donor electron pair.

First claim

What is claimed is:

1. A sensor device comprising:
an array of sensors including an array of wells operatively coupled to the array of sensors, each well of the array of wells providing a sidewall formed over each sensor;
a material layer formed over a sensor plate of each sensor and over at least a portion of the sidewall formed over each sensor; said material layer defining a sensor surface, and
a surface agent bound to the sensor surface or a sidewall surface, the surface agent comprising:
a surface reactive functional group including a phosphinate, a phosphonate, or a phosphate functional group; and
a distal function group including a secondary, tertiary or heterocyclic amine functional group.

2. The sensor device of claim 1 , wherein the sensor surface is formed from a metal.

3. The sensor device of claim 2 , wherein the metal forming the sensor surface comprises tungsten, titanium, tantalum, hafnium, aluminum, zirconium, gold, silver, platinum, copper and combinations thereof.

4. The sensor device of claim 1 , wherein the sensor surface is formed from a metal oxide, or a metal nitride, or combinations thereof.

5. The sensor device of claim 4 , wherein the metal oxide or metal nitride forming the sensor surface comprises titanium dioxide, titanium nitride tantalum oxide, hafnium oxide, zirconia, alumina or combinations thereof.

6. The sensor device of claim 1 , wherein the surface agent comprises a pyridine alkyl phosphonic acid, methyl ammonium phosphonic acid, ethyl ammonium phosphonic acid, imidazole phosphonic acid, 1-methyl-3-(hexylphosphonic acid) imidazolium, (12-dodecylphosphonic acid) methyltriazolium, (6-hexylphosphonic acid) imidazolium, (1-amino-1-phenylmethyl) phosphonic acid, fluorinated or chlorinated derivatives thereof, or combinations thereof.

7. The sensor device of claim 1 , wherein the surface agent comprises a bisphosphonic acid or a multidentate phosphonic acid comprising alendronic acid and derivatives thereof, ethylene diamine tetrakis (methylene phosphonic acid), diethylenetriamine penta (methylene phosphonic acid), hexamethylenediamine tetra (methylene phosphonic acid), tetramethylenediamine tetra (methylene phosphonic acid), or combinations thereof.

8. The sensor device of claim 1 , wherein the surface agent is bound in a monolayer to the sensor surface or the sidewall surface.

9. The sensor device of claim 1 , wherein the heterocyclic amine of the distal functional group comprises a pyrrolidine, a pyrrole, an imidazole, a piperidine, a pyridine, a pyrimidine, or a purine functional group.

10. The sensor device of claim 1 , wherein the sensor device is an ion-sensitive field effect transistor (ISFET) sensor device.

11. A sensor apparatus comprising:
a sensor device disposed in a flow cell, the sensor device comprising:
an array of sensors including an array of wells operatively coupled to the array of sensors, each well of the array of wells providing a sidewall formed over each sensor;
a material layer formed over a sensor plate of each sensor; said material layer defining a sensor surface, and
a surface agent comprising:
a surface active functional group reactive with Bronsted base or Lewis acid functionality on the sensor surface or sidewall surface; and
a distal function group including a secondary, tertiary or heterocyclic amine functional group; and

a reference electrode fluidically coupled to the flow cell.

12. The sensor apparatus of claim 11 , wherein the surface agent comprises a pyridine alkyl phosphonic acid, methyl ammonium phosphonic acid, ethyl ammonium phosphonic acid, imidazole phosphonic acid, 1-methyl-3-(hexylphosphonic acid) imidazolium, (12-dodecylphosphonic acid) methyltriazolium, (6-hexylphosphonic acid) imidazolium, (1-amino-1-phenylmethyl) phosphonic acid, fluorinated or chlorinated derivatives thereof, or combinations thereof.

13. The sensor apparatus of claim 11 , wherein the surface agent comprises a bisphosphonic acid or a multidentate phosphonic acid comprising alendronic acid and derivatives thereof, ethylene diamine tetrakis (methylene phosphonic acid), diethylenetriamine penta (methylene phosphonic acid), hexamethylenediamine tetra (methylene phosphonic acid), tetramethylenediamine tetra (methylene phosphonic acid), or combinations thereof.

14. The sensor apparatus of claim 11 , wherein the material layer is additionally formed over at least a portion of the sidewall of each well formed over each sensor.

15. The sensor apparatus of claim 14 , wherein the sensor surface is formed from a metal comprising tungsten, titanium, tantalum, hafnium, aluminum, zirconium, gold, silver, platinum, copper or combinations thereof.

16. The sensor apparatus of claim 15 , wherein the surface agent comprises a pyridine alkyl phosphonic acid, methyl ammonium phosphonic acid, ethyl ammonium phosphonic acid, imidazole phosphonic acid, 1-methyl-3-(hexylphosphonic acid) imidazolium, (12-dodecylphosphonic acid) methyltriazolium, (6-hexylphosphonic acid) imidazolium, (1-amino-1-phenylmethyl) phosphonic acid, fluorinated or chlorinated derivatives thereof, or combinations thereof.

17. The sensor apparatus of claim 15 , wherein the surface agent comprises a bisphosphonic acid or a multidentate phosphonic acid comprising alendronic acid and derivatives thereof, ethylene diamine tetrakis (methylene phosphonic acid), diethylenetriamine penta (methylene phosphonic acid), hexamethylenediamine tetra (methylene phosphonic acid), tetramethylenediamine tetra (methylene phosphonic acid), or combinations thereof.

18. The sensor apparatus of claim 14 , wherein the sensor surface is formed from a metal oxide, or a metal nitride comprising titanium dioxide, titanium nitride tantalum oxide, hafnium oxide, zirconia, alumina or combinations thereof.

19. The sensor apparatus of claim 11 , wherein the heterocyclic amine of the distal functional group comprises a pyrrolidine, a pyrrole, an imidazole, a piperidine, a pyridine, a pyrimidine, or a purine functional group.

20. The sensor apparatus of claim 11 , wherein the sensor device an ion-sensitive field effect transistor (ISFET) sensor device.

Assignees

• Life Technologies Corp

Inventors

• Cicero Ronald L
• Ball James A
• Mastroianni Alexander
• Inman Christina E
• Gray Jeremy
• Glazer Marc
• Wang Yufang
• Koscinski Joseph
• Waggoner Phil

Classifications

• G01N27/4145 Primary

  specially adapted for biomolecules, e.g. gate electrode with immobilised receptors · CPC title