Surface treatment of semiconductor sensors

Patent metadata

Field	Value
Publication number	US-10809225-B2
Application number	US-201514789795-A
Country	US
Kind code	B2
Filing date	Jul 1, 2015
Priority date	Jul 2, 2014
Publication date	Oct 20, 2020
Grant date	Oct 20, 2020

Abstract

A sensor component includes a sensor including a sensor surface and a reaction site in cooperation with the sensor and exposing the sensor surface. The reaction site including a reaction site surface. A surface agent is bound to the reaction site surface or the sensor surface. The surface agent includes a surface active functional group reactive with Bronsted base or Lewis acid functionality on the reaction site surface or the sensor surface and including distal functionality that does not have a donor electron pair.

First claim

What is claimed is:

1. A sensor comprising:
a sensor surface of the sensor; said sensor formed in a semiconductor substrate, wherein the sensor surface defines an ion sensitive material layer formed of a metal, metal oxide, or metal nitride;
a structure disposed over the semiconductor substrate and defining a reaction site including a reaction site surface, the structure comprising a semi-metal oxide or nitride, wherein the reaction site provides access to the sensor surface through the structure; and
a surface agent bound to the ion sensitive material layer, the surface agent including:
a surface active functional group reactive with the sensor surface, the surface active functional group including phosphate, phosphinic acid, a bisphosphonic acid, multidentate phosphates or phosphonates, polyphosphates/phosphonates, or any combination thereof, and
a distal functionality including a positively charged functional group formed from an amine derived from a secondary, tertiary or heterocyclic amine.

2. The sensor of claim 1 , wherein the surface agent includes a functionalized amino bis(alkyl phosphonic acid).

3. The sensor of claim 1 , wherein the surface agent includes diethylenetriamine penta(methylene phosphonic acid), hexamethylenediamine tetra(methylene phosphonic acid), tetramethylenediamine tetra(methylene phosphonic acid), or any combination thereof.

4. The sensor of claim 1 , wherein the surface agent binds in a monolayer.

5. The sensor of claim 1 , wherein the sensor includes a field effect transistor.

6. The sensor of claim 5 , wherein the field effect transistor includes an ion sensitive field effect transistor.

7. The sensor of claim 1 , wherein the sensor is part of a sensor array and wherein the reaction site is a well of an array of wells operatively coupled to the sensor array.

8. The sensor of claim 1 , wherein the surface agent binds to the reaction site surface.

9. The sensor of claim 1 , wherein the surface agent includes imidazole phosphoric acid, chlorine or bromine salts of quaternary amino phosphonic acids, methyl ammonium phosphonic acid, ethyl ammonium phosphonic acid, (12-dodecylphosphonic acid) methyltriazolium bromide, (6-hexylphosphonic acid) imidazolium, pyridine alkyl phosphonic acids, (1-amino-1-phenylmethyl) phosphonic acid, fluorinated or chlorinated derivatives thereof, derivatives thereof; or any combination thereof.

10. The sensor of claim 1 , wherein the positively charged functional group is derived from a heterocyclic amine including pyrrolidine, pyrrole, imidazole, piperidine, pyridine, triazole, pyrimidine, purine, or combinations thereof.

11. A method of treating a sensor component, the method comprising:
washing a sensor component, the sensor component including a sensor formed in a semiconductor substrate and the sensor including a sensor surface defining an ion sensitive material layer formed of a metal, metal oxide, or metal nitride, the sensor component including a structure formed of an oxide or nitride of silicon and disposed over the semiconductor substrate, the structure defining a reaction site including a reaction site surface, wherein the reaction site provides access to the sensor surface, the sensor responsive to changes in ion concentration; and
binding a surface agent to the ion sensitive material layer by applying the surface agent to the sensor component, the surface agent including:
a surface active functional group reactive with the ion sensitive material layer, the surface active functional group including phosphate, phosphinic acid, a bisphosphonic acid, multidentate phosphates or phosphonates, polyphosphates/phosphonates, or any combination thereof; and
a distal functionality including a positively charged functional group formed from an amine derived from a secondary, tertiary or heterocyclic amine.

12. The method of claim 11 , further comprising washing the sensor component with alcohol after applying the surface agent.

13. The sensor of claim 11 , wherein binding the surface agent to the ion sensitive material layer comprises using a surface agent including imidazole phosphoric acid, chlorine or bromine salts of quaternary amino phosphonic acids, methyl ammonium phosphonic acid, ethyl ammonium phosphonic acid, (12-dodecylphosphonic acid) methyltriazolium bromide, (6-hexylphosphonic acid) imidazolium, pyridine alkyl phosphonic acids, (1-amino-1-phenylmethyl) phosphonic acid, fluorinated or chlorinated derivatives thereof, derivatives thereof; or any combination thereof.

14. The sensor of claim 11 , wherein binding the surface agent to the ion sensitive material layer comprises using a heterocyclic amine including pyrrolidine, pyrrole, imidazole, piperidine, pyridine, triazole, pyrimidine, purine, or combinations thereof.

15. A sensor comprising:
a semiconductor substrate, the sensor formed in the semiconductor substrate and including a sensor surface defining an ion sensitive material layer responsive to a change in ion concentration, the ion sensitive material layer comprising a metal, metal oxide, metal nitride, or combinations thereof;
a structure disposed over the substrate and ion sensitive material layer and defining a well including a well wall surface, wherein the well provides access to and exposes the ion sensitive material layer through the structure, the structure formed of semi-metal oxide or nitride; and
a surface agent bound to the ion sensitive material layer, the surface agent including:
a surface active functional group reactive with the sensor surface, the surface active functional group including an alkyl phosphonic acid, a salt of quaternary amino phosphonic acids, a fluorinated or chlorinated derivative thereof, or a combination thereof; and
a distal functionality including a positively charged functional group formed from an amine derived from a secondary, tertiary or heterocyclic amine.

16. The sensor of claim 15 , wherein the surface agent includes chlorine or bromine salts of quaternary amino phosphonic acids, methyl ammonium phosphonic acid, ethyl ammonium phosphonic acid, (12-dodecylphosphonic acid) methyltriazolium bromide, (6-hexylphosphonic acid) imidazolium, pyridine alkyl phosphonic acids, (1-amino-1-phenylmethyl) phosphonic acid, fluorinated or chlorinated derivatives thereof, derivatives thereof; or any combination thereof.

17. The sensor of claim 15 , wherein the positively charged functional group is derived from a heterocyclic amine including pyrrolidine, pyrrole, imidazole, piperidine, pyridine, triazole, pyrimidine, purine, or combinations thereof.

Assignees

• Life Technologies Corp

Inventors

• Cicero Ronald L
• Glazer Marc
• Wang Yufang
• Inman Christina E
• Gray Jeremy
• Koscinski Joseph
• Ball James A
• Waggoner Phil
• Mastroianni Alexander

Classifications

• G01N27/4145 Primary

  specially adapted for biomolecules, e.g. gate electrode with immobilised receptors · CPC title