Solar cell and manufacturing method thereof, and photovoltaic system

Patent metadata

Field	Value
Publication number	US-12396290-B2
Application number	US-202418757670-A
Country	US
Kind code	B2
Filing date	Jun 28, 2024
Priority date	Nov 22, 2023
Publication date	Aug 19, 2025
Grant date	Aug 19, 2025

Abstract

A solar cell and a manufacturing method thereof, and a photovoltaic system. The solar cell includes: a substrate layer including a first surface and a second surface arranged oppositely along a thickness direction thereof; a tunnel oxide layer, a first doped polysilicon layer, and a first passivation layer sequentially arranged on the first surface of the substrate layer in a direction gradually away from the substrate layer; and a first finger electrode layer, at least one of the first fingers being arranged in first connection holes, bottoms of the first connection holes being located in the first doped polysilicon layer, and the first fingers passing through the first connection holes corresponding thereto to be electrically connected to the first doped polysilicon layer; and in the first direction, widths of the first connection holes being all less than widths of the first fingers corresponding to the first connection holes. While ensuring good electrical connection, the solar cell causes less damage and recombination to a passivation structure of the solar cell, and has high photoelectric conversion efficiency.

First claim

The invention claimed is:

1. A solar cell, comprising:
a substrate layer comprising a first surface and a second surface arranged oppositely along a thickness direction thereof;
a tunnel oxide layer, a first doped polysilicon layer, and a first passivation layer sequentially arranged on the first surface of the substrate layer in a direction gradually away from the substrate layer; and
a first finger electrode layer, the first finger electrode layer comprising a plurality of first fingers sequentially arranged at intervals along a first direction;
at least one first connection hole being provided in the first passivation layer and the first doped polysilicon layer, along the thickness direction, the first connection hole running through all of the first passivation layer and running through part of the first doped polysilicon layer, bottoms of the first connection holes being located in the first doped polysilicon layer, and the first fingers passing through the first connection holes corresponding thereto to be electrically connected to the first doped polysilicon layer; and in the first direction, widths of the first connection holes being all less than widths of the first fingers corresponding to the first connection holes;
the projection area of each of the first connection holes on the first surface independently ranges from 10 nm 2 to 10 μm 2 .

2. The solar cell according to claim 1 , wherein based on a projection area on the first surface, the first fingers per 1 mm 2 are electrically connected to the first doped polysilicon layer through 1 to 100,000 first connection holes.

3. The solar cell according to claim 1 , wherein at least one second connection hole is provided in the first passivation layer, and the first fingers pass through the second connection holes and the first connection holes corresponding thereto to be electrically connected to the first doped polysilicon layer; and in the first direction, widths of the second connection holes are all less than or equal to widths of the first fingers corresponding to the second connection holes; and
projections of the first connection holes on the first surface all fall within a projection range of the second connection holes on the first surface.

4. The solar cell according to claim 3 , wherein a number of the second connection holes is less than that of the first connection holes.

5. The solar cell according to claim 3 , further comprising: a boron doped layer, a second passivation layer, and a second finger electrode layer;
the boron doped layer and the second passivation layer being sequentially arranged on the second surface of the substrate layer in a direction gradually away from the substrate layer, and the second finger electrode layer comprising a plurality of second fingers arranged at intervals along a second direction; and
at least one third connection hole being provided in the second passivation layer and the boron doped layer, along the thickness direction, the third connection hole running through all of the second passivation layer and running through part of the boron doped layer, bottoms of the third connection holes being located in the boron doped layer, and the second fingers passing through the third connection holes corresponding thereto to be electrically connected to the boron doped layer; and in the second direction, widths of the third connection holes being all less than widths of the second fingers corresponding to the third connection holes.

6. The solar cell according to claim 5 , wherein a projection area of each of the third connection holes on the second surface is independently from a square nanometer level to a square micron level.

7. The solar cell according to claim 6 , wherein the projection area of each of the third connection holes on the second surface independently ranges from 10 nm 2 to 10 μm 2 .

8. The solar cell according to claim 5 , wherein based on a projection area on the second surface, the second fingers per 1 mm 2 are electrically connected to the boron doped layer through 1 to 100,000 third connection holes.

9. The solar cell according to claim 5 , wherein at least one fourth connection hole is provided in the second passivation layer, and the second fingers pass through the fourth connection holes and the third connection holes corresponding thereto to be electrically connected to the boron doped layer; and in the second direction, widths of the fourth connection holes are all less than or equal to widths of the second fingers corresponding to the third connection holes; and
projections of the third connection holes on the second surface all fall within a projection range of the fourth connection holes on the second surface.

10. The solar cell according to claim 5 , wherein a thickness of the second passivation layer ranges from 2 nm to 20 nm.

11. The solar cell according to claim 1 , wherein a combination of one or more of the following (1) to (2) is satisfied:
(1) a thickness of the first passivation layer ranges from 40 nm to 100 nm; and
(2) a thickness of the first doped polysilicon layer ranges from 10 nm to 200 nm.

12. The solar cell according to claim 5 , further comprising: an antireflection layer;
the antireflection layer being arranged on a side of the second passivation layer away from the substrate layer.

13. The solar cell according to claim 12 , wherein a thickness of the antireflection layer ranges from 40 nm to 100 nm.

14. The solar cell according to claim 1 , wherein the substrate layer is an N-type monocrystalline silicon wafer.

15. A photovoltaic system, comprising the solar cell according to claim 1 .

16. A manufacturing method for a solar cell, comprising the following steps:
sequentially forming a tunnel oxide layer, a first doped polysilicon layer, and a first passivation layer on a first surface of a substrate layer;
printing a first pattern on a surface of the first passivation layer away from the substrate layer, a material of the first pattern comprising a first metal slurry; the first pattern comprising a plurality of first finger bars sequentially arranged at intervals along a first direction;
drying the first pattern; and
sintering the dried first pattern, and manufacturing a first finger electrode layer, the first finger electrode layer comprising a plurality of first fingers sequentially arranged at intervals along the first direction, each of the first fingers corresponding to one of the first finger bars;
wherein, in the sintering, the material of the first pattern corrodes the first passivation layer and the first doped polysilicon layer, at least one first connection hole is etched in the first passivation layer and the first doped polysilicon layer at a position corresponding to at least one of the first finger bars, bottoms of the first connection holes are located in the first doped polysilicon layer, and the manufactured first fingers pass through the first connection holes corresponding thereto to be in contact with the first doped polysilicon layer; and in the first direction, widths of the first connection holes being all less than widths of the first fingers corresponding to the first connection holes;
a projection area of each of the first connection holes on the first surface independently ranging from 10 nm 2 to 10 μm 2 .

17. The manufacturing method for the solar cell according to claim 16 , wherein a peak temperature of the sintering ranges from 700° C. to 900° C.

Assignees

• Trina Solar Co Ltd

Inventors

• Liu Chengfa
• Zou Yang
• Wang Kunzhou
• Li Wanli
• Zhang Yaqian
• Wu Xiaopeng
• Zhang Shuai
• Lu Yugang
• Chen Hong

Classifications

• H10F77/1642

  including only Group IV materials · CPC title

• H10F77/1223

  characterised by the dopants · CPC title

• H10F77/315

  the coatings being antireflective or having enhancing optical properties · CPC title

• H10F71/1221

  comprising polycrystalline silicon · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title