Composite wavelength converter

Patent metadata

Field	Value
Publication number	US-12389725-B2
Application number	US-202017775772-A
Country	US
Kind code	B2
Filing date	Dec 1, 2020
Priority date	Dec 5, 2019
Publication date	Aug 12, 2025
Grant date	Aug 12, 2025

Abstract

The invention refers to a composite wavelength converter ( 1 ) for an LED ( 100 ), comprising a substrate ( 10 ) and an epitaxial film ( 20 ) formed by liquid phase epitaxy on the top and bottom of the substrate ( 10 ). Furthermore, the invention refers to a method of preparation of a composite wavelength converter ( 1 ) for an LED ( 100 ). Furthermore, the invention refers to a white LED light source comprising an LED ( 100 ) and an inventive composite wavelength converter ( 1 ) mounted on a light emitting surface of the LED ( 100 ).

First claim

The invention claimed is:

1. A composite wavelength converter for an LED, comprising
a substrate ( 10 ) formed by a first layer of single crystalline garnet phosphor presenting first emission and excitation spectra, having a cubic crystal structure, a first lattice parameter and oriented crystal planes, wherein the substrate ( 10 ) contains a first activator, and
an epitaxial film ( 20 ) formed by liquid phase epitaxy on the top and bottom of the substrate ( 10 ) as a second layer of single crystalline garnet phosphor with the first activator, presenting second emission and excitation spectra, having a cubic crystal structure and a second lattice parameter, wherein the epitaxial film ( 20 ) is arranged directly on the top and bottom of the substrate ( 10 ) on the oriented crystalline planes of the substrate ( 10 ),
wherein the second emission and excitation spectra are different from the first emission and excitation spectra,
wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of −2.0 to +2.0%, and
wherein the thickness of the epitaxial film ( 20 ) on the top of the substrate ( 10 ) is at least 2 μm and the thickness of the epitaxial film ( 20 ) on the bottom of the substrate ( 10 ) is at least 2 μm.

2. The converter according to claim 1 , wherein the converter ( 1 ) comprises one or two additional epitaxial films, namely a first ( 30 ) and optionally a second ( 40 ) additional epitaxial film,
wherein the first additional epitaxial film ( 30 ) is formed by liquid phase epitaxy as a third layer of single crystalline garnet phosphor with the first activator, arranged directly on the epitaxial film ( 20 ) on the top and bottom side of the substrate ( 10 ), presenting third emission and excitation spectra, having a cubic crystal structure and a third lattice parameter,
wherein the third emission and excitation spectra are different from the first emission and excitation spectra,
wherein the difference between the third lattice parameter and the second lattice parameter results in a lattice mismatch within a range of −2.0 to +2.0%, and wherein the thickness of the first additional epitaxial film ( 30 ) on the top side of the substrate ( 10 ) is at least 2 μm and the thickness of the first additional epitaxial film ( 30 ) on the bottom side of the substrate ( 10 ) is at least 2 μm,
wherein the second additional epitaxial film ( 40 ) is formed by liquid phase epitaxy as a fourth layer of single crystalline garnet phosphor with the first activator, arranged directly on the first additional epitaxial film ( 30 ) on the top and bottom side of the substrate ( 10 ), presenting fourth emission and excitation spectra, having a cubic crystal structure and a fourth lattice parameter,
wherein the fourth emission and excitation spectra are different from the first emission and excitation spectra, and
wherein the difference between the fourth lattice parameter and the third lattice parameter results in a lattice mismatch within a range of −2.0 to +2.0%, and wherein the thickness of the second additional epitaxial film ( 40 ) on the top side of the substrate ( 10 ) is at least 2 μm and the thickness of the second additional epitaxial film ( 40 ) on the bottom side of the substrate ( 10 ) is at least 2 μm.

3. The converter according to claim 1 , wherein the first activator is Ce 3+ ions.

4. The converter according to claim 1 , wherein the second activator is one from Eu 3+ , Pr 3+ , Tb 3+ and Mn 2+ ions.

5. The converter according to claim 4 , wherein the epitaxial film ( 20 ), first additional epitaxial film ( 30 ) and/or second additional epitaxial film ( 40 ) is/are formed by a mixed garnet compound having a composition
represented by a formula X=A 1 3 B 1 2 C 1 3 O 12 :Ce,R, wherein A 1 is Ca 2+ ions; B 1 is Sc 3+ or Al 3+ or Ga 3+ ions, C 1 is Si 4+ or Ge 4+ ions and R is the second dopant, or
represented by a formula Y=A 1 3-x A 2 x B 1 2-y B 2 y C 1 3-z C 2 z O 12 :Ce,R, wherein A 1 is Ca 2+ ions; A 2 is Y 3+ , Lu 3+ , La 3+ , Tb 3+ and Gd 3+ ions; B 1 is Mg 2+ ions, B 2 is Sc 3+ or Al 3+ or Ga 3+ ions, C 1 is Si 4+ ions, C 2 is Ge 4+ ions and R is the second dopant, wherein 0<x<1.0, 0<y<2, and 0<z<3.

6. The converter according to claim 1 , wherein the substrate ( 10 ) is Y 3 Al 5 O 12 :Ce garnet, Lu 3 Al 5-s Ga s O 12 :Ce garnet or Gd 3 Al 5-s Ga s O 12 :Ce garnet, wherein s is between 2.5 and 3.

7. The converter according to claim 1 , wherein the thickness of the substrate ( 10 ) is between 0.3 and 1 mm.

8. The converter according to claim 1 , wherein the thickness of the epitaxial film ( 20 ) on the top side of the substrate ( 10 ) is at most 200 μm, and/or the thickness of the epitaxial film ( 20 ) on the on the bottom side of the substrate ( 10 ) is at most 200 μm,
wherein the thickness of the first additional epitaxial film ( 30 ) on the top side of the substrate ( 10 ) is at most 200 μm, and/or the thickness of the epitaxial film ( 30 ) on the bottom side of the substrate ( 10 ) is at most 200 μm, and/or
wherein the thickness of the second additional epitaxial film ( 40 ) on the top side of the substrate ( 10 ) is at most 200 μm, and/or the thickness of the second additional epitaxial film ( 40 ) on the bottom side of the substrate ( 10 ) is at most 200 μm.

9. A white LED light source comprising an LED ( 100 ) and a composite wavelength converter ( 1 ) mounted on a light emitting surface of the LED ( 100 ), the converter ( 1 ) converting at least a portion of light having a wavelength lying within a first range emitted by the LED ( 100 ) into light having a wavelength lying in a second range, wherein the wavelength lying within the second range is higher than the wavelength lying within the first range
the composite wavelength converter comprising
a substrate ( 10 ) formed by a first layer of single crystalline garnet phosphor presenting first emission and excitation spectra, having a cubic crystal structure, a first lattice parameter and oriented crystal planes, wherein the substrate ( 10 ) contains a first activator, and
an epitaxial film ( 20 ) formed by liquid phase epitaxy on the top and bottom of the substrate ( 10 ) as a second layer of single crystalline garnet phosphor with the first activator, presenting second emission and excitation spectra, having a cubic crystal structure and a second lattice parameter, wherein the epitaxial film ( 20 ) is arranged directly on the top and bottom of the substrate ( 10 ) on the oriented crystalline planes of the substrate ( 10 ),
wherein the second emission and excitation spectra are different from the first emission and excitation spectra,
wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of −2.0 to +2.0%, and
wherein the thickness of the epitaxial film ( 20 ) on the top of the substrate ( 10 ) is at least 2 μm, and the thickness of the epitaxial film ( 20 ) on the bottom of the substrate ( 10 ) is at least 2 μm.

10. The white LED light source according to claim 9 , wherein the wavelength lying within the first range belongs to the blue wavelength range, and wherein the converter ( 1 ) is adapted to convert an appropriate portion of the light having the wavelength lying within the first range into light having the wavelength lying within the second range for creating a white light spectrum comprising the remaining portion of the light having the wavelength lying within the first range and the portion converted into light having the wavelength lying within the second range, or
wherein the wavelength lying within the first range belongs to the UV wavele

Assignees

• Univ Friedrich Alexander Er

Inventors

• Zorenko Yuriy
• Batentschuk Miroslaw
• Brabec Christoph
• Osvet Andres
• Gorbenko Vitalii
• Levchuk Ievgen
• Zorenko Tetiana
• Chepyga Liudmyla
• Markovskyi Anton
• Witkiewicz-Lukaszek Sandra

Classifications

• H10H20/0361

  of wavelength conversion means · CPC title

• G02B5/208

  for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation · CPC title

• C30B31/04

  by contacting with diffusion materials in the liquid state · CPC title

• C30B29/28

  with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets · CPC title

• C30B19/12

  characterised by the substrate · CPC title