Ru liner above a barrier layer

Patent metadata

Field	Value
Publication number	US-12387978-B2
Application number	US-202217970872-A
Country	US
Kind code	B2
Filing date	Oct 21, 2022
Priority date	Oct 21, 2022
Publication date	Aug 12, 2025
Grant date	Aug 12, 2025

Abstract

A method to produce a layered substrate, which includes the steps of depositing a diffusion barrier layer on the substrate; depositing an underlayer comprising a Group 6 metal on the barrier layer; and depositing a ruthenium layer comprising ruthenium on the underlayer, to produce the layered substrate. A layered substrate is also disclosed.

First claim

The invention claimed is:

1. A method to produce a layered substrate, comprising:
depositing a diffusion barrier layer on the substrate;
depositing an underlayer comprising a Group 6 metal on the barrier layer; and
depositing a ruthenium layer comprising ruthenium on the underlayer, to produce the layered substrate;
wherein the method further comprises annealing of the layered substrate by heating of the layered substrate at a temperature of greater than or equal to about 800° C. in an oxygen free environment, for a period of time of greater than or equal to about 5 seconds and less than or equal to about 500 seconds; and
wherein an upper surface of the annealed layered substrate has an average roughness Ra of less than or equal to about 10 nm, and/or the upper surface of the annealed layered substrate has a root mean square roughness Rq of less than or equal to about 10 nm.

2. The method of claim 1 , wherein the diffusion barrier layer comprises titanium nitride Ti a N x , tantalum nitride, Ta a N x , zirconium nitride Zr a N x , wherein each a is independently from 1 to 3 and x is from 1 to 5 to result in a neutral compound; titanium zirconium nitride Ti c Zr d N x , wherein c+d equals an integer from 1 to 3 and x is from 1 to 5 to result in a neutral compound; or a combination thereof.

3. The method of claim 1 , wherein the diffusion barrier layer further comprises less than or equal to about 1 weight percent of the Group 6 metal present in the underlayer.

4. The method of claim 1 , wherein the underlayer has a thickness which is less than a thickness of the ruthenium layer.

5. The method of claim 1 , wherein the underlayer has a thickness of greater than or equal to about 0.5 nm, and less than or equal to about 10 nm.

6. The method of claim 1 , wherein the underlayer comprises molybdenum.

7. The method of claim 1 , wherein the underlayer consists essentially of molybdenum.

8. The method of claim 1 , wherein the ruthenium layer consists essentially of ruthenium.

9. The method of claim 1 , wherein the ruthenium layer has a thickness of greater than or equal to about 5 nm, and less than or equal to about 1000 nm.

10. The method of claim 1 , wherein the underlayer and the ruthenium layer are individually deposited via physical vapor deposition.

11. The method of claim 1 , wherein the oxygen free environment comprises nitrogen, argon, neon, krypton, hydrogen, or a combination thereof.

12. A method to produce a layered substrate, comprising:
depositing a diffusion barrier layer on the substrate;
depositing an underlayer comprising a Group 6 metal on the barrier layer; and
depositing a ruthenium layer comprising ruthenium on the underlayer, to produce the layered substrate;
wherein the method further comprises annealing of the layered substrate by heating of the layered substrate at a temperature of greater than or equal to about 800° C., in an oxygen free environment, for a period of time of greater than or equal to about 5 seconds and less than or equal to about 500 seconds; and
wherein the ruthenium layer has a center point resistivity of less than or equal to about 10 ohm-cm.

13. A method to produce a layered substrate, comprising:
depositing a diffusion barrier layer on the substrate;
depositing an underlayer comprising a Group 6 metal on the barrier layer; and
depositing a ruthenium layer comprising ruthenium on the underlayer, to produce the layered substrate;
wherein the method further comprises annealing of the layered substrate by heating of the layered substrate at a temperature of greater than or equal to about 800° C., in an oxygen free environment, for a period of time of greater than or equal to about 5 seconds and less than or equal to about 500 seconds; and further comprising depositing a nitride capping layer on an upper surface of the annealed layered substrate.

14. The method of claim 13 , wherein the nitride capping layer comprises silicon nitride.

Assignees

• Applied Materials Inc

Inventors

• Wang Zhaoxuan
• Lei Jianxin
• Hou Wenting
• Kang Sung-Kwan
• Iyer Anand Nilakantan

Classifications

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/074

  of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers · CPC title

• H10W20/032 Primary

  of conductive barrier, adhesion or liner layers · CPC title

• H10W20/077 Primary

  on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence) · CPC title

• H01L23/53266

  Electricity · mapped topic