Sam formulations and cleaning to promote quick depositions

Patent metadata

Field	Value
Publication number	US-12387937-B2
Application number	US-202117542563-A
Country	US
Kind code	B2
Filing date	Dec 6, 2021
Priority date	Dec 6, 2021
Publication date	Aug 12, 2025
Grant date	Aug 12, 2025

Abstract

Embodiments of the invention provide self-assembled monolayers (SAM) formulations and cleaning to promote quick depositions. A hydrogen-based plasma clean is performed on a structure, the structure including a metal layer and a dielectric layer. A self-assembled monolayers (SAM) solution is dispensed on the structure, the SAM solution including SAMs and a solvent, the SAMs being configured to assemble on the metal layer. The structure is rinsed with a rinse solution including the solvent.

First claim

What is claimed is:

1. A method comprising:
performing a hydrogen-based plasma clean on both a metal layer and a dielectric layer of a structure;
in response to performing the hydrogen-based plasma clean on both the metal layer and the dielectric layer, dispensing a self-assembled monolayers (SAM) solution on the structure to puddle for about 1 minute prior to rinsing with a rinse solution and prior to baking, the SAM solution comprising SAMs and a solvent, the SAMs being configured to assemble on the metal layer, wherein the solvent of the SAM solution comprises didrolevoglucosenone;
rinsing the structure with the rinse solution comprising the solvent having the didrolevoglucosenone; and
in response to the SAMs having remained on the structure for about 1 minute prior to the rinsing the rinse solution and prior to baking, baking the structure in a gas.

2. The method of claim 1 , further comprising:
baking the structure in the gas comprising nitrogen.

3. The method of claim 1 , wherein the gas excludes oxygen.

4. The method of claim 1 , wherein the solvent is a high boiling point solvent, the high boiling point solvent boils at about 131° Celsius (C) to about 230° C.

5. The method of claim 1 , wherein the SAMs remain on the metal layer and are rinsed from the dielectric layer.

6. The method of claim 1 further comprising:
depositing a material on the dielectric layer, while the SAMs prevent the material from being deposited on the metal layer.

7. The method of claim 1 , wherein the SAMs are removed from the metal layer.

8. The method of claim 1 , wherein the solvent comprises a boiling point such that the solvent prevents the structure from precipitating subsequent to the rising.

9. The method of claim 1 , further comprising:
performing a first filtering of the SAM solution using a first filter comprising a first pore size; and
performing a second filtering of the SAM solution using a second filter comprising a second pore size smaller than the first pore size, responsive to the first filtering.

10. A method of forming a structure, the method comprising:
performing a hydrogen-based plasma clean on both a metal layer and a dielectric layer of the structure;
in response to performing the hydrogen-based plasma clean on both the metal layer and the dielectric layer, puddling a SAM solution on the structure for about 1 minute prior to rinsing with a rinse solution and prior to baking, the SAM solution comprising SAMs that assemble on the metal layer and a solvent, wherein the solvent of the SAM solution is selected from the following comprising 4-methyl-2-pentanol, gamma-butyrolactone, n-butyl acetate, n-methylpyrollidone, and didrolevoglucosenone;
in response to the SAMs having remained on the structure for about 1 minute prior to the rinsing the rinse solution and prior to baking, baking the structure in a gas;
removing the SAMs from the dielectric layer using the rinse solution comprising the solvent;
depositing another dielectric layer on the dielectric layer, the SAMs inhibiting the another dielectric layer from forming on the metal layer; and
removing the SAMs from the metal layer.

11. The method of claim 10 , further comprising:
baking the structure in the gas prior to depositing the another dielectric layer.

12. The method of claim 10 , further comprising:
baking the structure in the gas comprising nitrogen.

13. The method of claim 10 , wherein the gas excludes oxygen.

14. The method of claim 10 , wherein the solvent is a high boiling point solvent, the high boiling point solvent boils at about 131° C. to about 230° C.

15. The method of claim 10 , wherein the SAMs remain on the metal layer subsequent to removing the SAMs from the dielectric layer.

16. The method of claim 10 ,
wherein the solvent for rinsing excludes methanol and isopropyl.

17. The method of claim 10 , further comprising:
performing a first filtering of the SAM solution using a first filter comprising a first pore size; and
performing a second filtering of the SAM solution using a second filter comprising a second pore size smaller than the first pore size, responsive to the first filtering.

Assignees

• IBM

Inventors

• Wojtecki Rudy J
• Lanzillo Nicholas Anthony
• Bhosale Prasad
• Nguyen Son

Classifications

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P14/6504

  In-situ cleaning · CPC title

• H10P14/272

  using mask materials other than SiO2 or SiN · CPC title

• H10P14/271

  characterised by the preparation of substrate for selective deposition · CPC title

• H10P14/61 Primary

  using masks · CPC title