Negative-type photosensitive resin composition and method for producing polyimide and cured relief pattern using same

US12386259B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12386259-B2
Application numberUS-201917260811-A
CountryUS
Kind codeB2
Filing dateJul 18, 2019
Priority dateJul 31, 2018
Publication dateAug 12, 2025
Grant dateAug 12, 2025

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Provided are a negative photosensitive resin composition and a method for forming a cured relief pattern using the same with which a high chemical resistance and resolution can be obtained and in which the occurrence of voids in the interface of a Cu layer contacting a resin layer after high-temperature storage evaluation can be suppressed. Provided is a negative photosensitive resin composition including (A) a polyimide precursor represented by general formula (1) below; (B) a compound having at least one selected from a urethane bond and a urea bond; and (C) a photopolymerization initiator. In the formula, X 1 , Y 1 , n 1 , R 1 , and R 2 are each as defined in the description of the present application.

First claim

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The invention claimed is: 1. A negative photosensitive resin composition, comprising: (A) a polyimide precursor represented by general formula (1) below, (B) a compound having at least one selected from a urethane bond and a urea bond, wherein the (B) compound further has a (meth)acrylic group, and a (meth)acrylic equivalent weight of 150 g/mol to 330 g/mol, and (C) a photopolymerization initiator: where X 1 is a tetravalent organic group, Y 1 is a divalent organic group, n 1 is an integer of 2 to 150, R 1 and R 2 are each independently a hydrogen atom or a monovalent organic group, and at least one of R 1 and R 2 is a monovalent organic group represented by general formula (2) below: where L 1 , L 2 , and L 3 are each independently a hydrogen atom or a C 1-3 organic group, and m 1 is an integer of 2 to 10; wherein the (B) compound contains a structure represented by general formula (3) below: where R 3 is a hydrogen atom or methyl group, A is a group selected from the group consisting of —O—, —NH—, and —NL 4 -, L 4 is a C 1-12 monovalent organic group, Z 1 is a C 2-24 organic group having a valency of m 2 and comprising one or more hetero atoms, Z 2 is a C 2-8 divalent organic group, and m 2 is an integer of 1 to 3. 2. The negative photosensitive resin composition according to claim 1 , wherein the (B) compound is a compound having a (meth)acrylic group and a urea bond. 3. The negative photosensitive resin composition according to claim 1 , wherein the (B) compound further has at least one functional group selected from a hydroxyl group, alkoxy group, and amino group. 4. The negative photosensitive resin composition according to claim 1 , wherein the (B) compound is a compound having a (meth)acrylic group and a urea bond, and the (meth)acrylic equivalent thereof is 150 to 330 g/mol. 5. The negative photosensitive resin composition according to claim 1 , wherein the (B) compound is a compound having a (meth)acrylic group and a urea bond, and the (meth)acrylic equivalent thereof is 210 to 330 g/mol. 6. The negative photosensitive resin composition according to claim 1 , wherein the (B) compound is a compound having a (meth)acrylic group and a urea bond, and the (meth)acrylic equivalent thereof is 220 to 330 g/mol. 7. The negative photosensitive resin composition according to claim 1 , wherein the (B) compound is at least one compound selected from the group consisting of general formulas (4) to (7), (11), (13), and (14) below: 8. The negative photosensitive resin composition according to claim 1 , further comprising (D) a corrosion inhibitor. 9. The negative photosensitive resin composition according to claim 8 , wherein the (D) corrosion inhibitor contains a nitrogen-containing heterocyclic compound. 10. The negative photosensitive resin composition according to claim 9 , wherein the nitrogen-containing heterocyclic compound is an azole compound. 11. The negative photosensitive resin composition according to claim 9 , wherein the nitrogen-containing heterocyclic compound is a purine derivative. 12. The negative photosensitive resin composition according to claim 1 , further comprising (E) a silane coupling agent. 13. The negative photosensitive resin composition according to claim 1 , wherein X 1 of the (A) polyimide precursor contains at least one selected from the group consisting of general formulas (20a), (20b), and (20c) below: where R 6 are each independently a monovalent group selected from the group consisting of a hydrogen atom, fluorine atom, C 1-10 hydrocarbon group, and C 1-10 fluorine-containing hydrocarbon group, l is an integer selected from 0 to 2, and m is an integer selected from 0 to 3. 14. The negative photosensitive resin composition according to claim 1 , wherein Y 1 of the (A) polyimide precursor contains at least one selected from the group consisting of general formulas (21a), (21b), and (21c) below: where R 6 are each independently a monovalent group selected from the group consisting of a hydrogen atom, fluorine atom, C 1-10 hydrocarbon group, and C 1-10 fluorine-containing hydrocarbon group, and n is an integer selected from 0 to 4. 15. The negative photosensitive resin composition according to claim 1 , wherein the (A) polyimide precursor comprises a polyimide precursor having a structural unit represented by general formula (8) below: where n 1 is an integer of 2 to 150 and R 1 and R 2 are each independently a hydrogen atom or a monovalent group. 16. The negative photosensitive resin composition according to claim 1 , wherein the (A) polyimide precursor comprises a polyimide precursor having a structural unit represented by general formula (9) below: where n 1 is an integer of 2 to 150, and R 1 and R 2 are each independently a hydrogen atom or a monovalent organic group. 17. The negative photosensitive resin composition according to claim 1 , wherein the (A) polyimide precursor is a copolymer of a structural unit represented by general formula (8) below: where n 1 is an integer of 2 to 150 and R 1 and R 2 are each independently a hydrogen atom or a monovalent organic group, and R 1 , R 2 , and n 1 may be the same as or different than R 1 , R 2 , and n 1 of general formula (9), and a structural unit represented by general formula (9) below: where n 1 is an integer of 2 to 150 and R 1 and R 2 are each independently a hydrogen atom or a monovalent organic group, and R 1 , R 2 , and n 1 may be the same as or different than R 1 , R 2 , and n 1 of general formula (8), or a mixture of a polyimide precursor having a structural unit represented by general formula (8) above, and a polyimide precursor having a structural unit represented by general formula (9) above. 18. The negative photosensitive resin composition according to claim 17 , wherein the (A) polyimide precursor is a copolymer of a structural unit represented by general formula (8) above and a structural unit represented by general formula (9) above. 19. The negative photosensitive resin composition according to claim 1 , comprising: 100 parts by weight of the (A) polyimide precursor, 0.1 to 30 parts by weight of the (B) compound relative to 100 parts by weight of the (A) polyimide precursor, and 0.1 to 20 parts by weight of the (C) photopolymerization initiator relative to 100 parts by weight of the (A) polyimide precursor. 20. A method for the production of a polyimid

Assignees

Inventors

Classifications

  • Treatment after imagewise removal, e.g. baking · CPC title

  • Non-aqueous compositions · CPC title

  • Polyamides or polyimides · CPC title

  • with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

  • Organic compounds not covered by group G03F7/029 · CPC title

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What does patent US12386259B2 cover?
Provided are a negative photosensitive resin composition and a method for forming a cured relief pattern using the same with which a high chemical resistance and resolution can be obtained and in which the occurrence of voids in the interface of a Cu layer contacting a resin layer after high-temperature storage evaluation can be suppressed. Provided is a negative photosensitive resin compositio…
Who is the assignee on this patent?
Asahi Chemical Ind
What technology area does this patent fall under?
Primary CPC classification G03F7/0382. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Aug 12 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).