Sputtering target, method for producing same, and method for producing sputtering film using sputtering target

Patent metadata

Field	Value
Publication number	US-12385126-B2
Application number	US-202218698353-A
Country	US
Kind code	B2
Filing date	Oct 5, 2022
Priority date	Oct 7, 2021
Publication date	Aug 12, 2025
Grant date	Aug 12, 2025

Abstract

A sputtering target includes crystal grains, has a content of an amorphous phase of 3% by volume or less, and contains at least one metal selected from the group consisting of chromium, molybdenum, and chromium-molybdenum alloys.

First claim

The invention claimed is:

1. A sputtering target of chromium, molybdenum, or chromium molybdenum alloys, wherein the sputtering target comprises crystal grains, the sputtering target has a content of an amorphous phase of 3% by volume or less, and a combined concentration of chromium and molybdenum of the sputtering target exceeds 99.6%.

2. The sputtering target according to claim 1 , wherein an oxygen content is 100 mass ppm or less, and an average crystal grain size of the crystal grains is 150 μm or less.

3. The sputtering target according to claim 2 , wherein a maximum deviation of the average crystal grain size of the crystal grains in a depth direction is 30 μm or less.

4. The sputtering target according to claim 1 , wherein a crystal orientation of the crystal grains is a random orientation.

5. The sputtering target according to claim 1 , wherein a sputtering surface has an area of 200 cm2 or more.

6. The sputtering target according to claim 1 , wherein an average KAM value is 2° or less.

7. The sputtering target according to claim 1 , wherein a relative density exceeds 99.6%.

8. The sputtering target according to claim 1 , wherein the crystal grains have an average aspect ratio of 1 or more and 1.8 or less.

9. A method for producing a sputtering film, the method comprising performing sputtering using the sputtering target according to claim 1 to produce a sputtering film.

10. A method for producing the sputtering target according to claim 1 , the method comprising:
a refining step including a plastic working step of subjecting an ingot containing at least one metal selected from the group consisting of chromium, molybdenum, and chromium-molybdenum alloys to plastic working treatment to obtain a plastically worked product and a heat treatment step of subjecting the plastically worked product to heating treatment.

11. The method for producing the sputtering target according to claim 10 , wherein the refining step is repeated.

12. The sputtering target according to claim 1 , wherein the combined concentration of chromium and molybdenum is 99.9% or more.

13. The sputtering target according to claim 1 , wherein the combined concentration of chromium and molybdenum is 99.99% or more.

14. The sputtering target according to claim 1 , wherein the sputtering target has the content of the amorphous phase of 0.5% by volume or less.

15. The sputtering target according to claim 1 , wherein the sputtering target has the content of the amorphous phase of 0.1% by volume or more.

16. The sputtering target according to claim 1 , wherein the sputtering target has the content of the amorphous phase of 0.01% by volume or more.

Assignees

• Tosoh Corp
• Tosoh Speciality Mat Corporation

Inventors

• Shono Daiki
• KONDO Taiga
• Mesuda Masami
• Itoh Kenichi
• Hanawa Koichi

Classifications

• H01J37/3426

  Material · CPC title

• B21B3/00

  Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences {; Rolling of aluminium, copper, zinc or other non-ferrous metals}(altering special metallurgical properties of alloys, other than structure consolidation or mechanical properties resulting therefrom C21D, C22F) · CPC title

• B21B1/026

  Rolling · CPC title

• C23C14/54

  Controlling or regulating the coating process · CPC title

• C22C2200/00

  Crystalline structure · CPC title