Tungsten oxide material, tungsten oxide powder mass for electrochromic device, and slurry for producing electrochromic device

Patent metadata

Field	Value
Publication number	US-12384959-B2
Application number	US-202218069301-A
Country	US
Kind code	B2
Filing date	Dec 21, 2022
Priority date	Sep 28, 2020
Publication date	Aug 12, 2025
Grant date	Aug 12, 2025

Abstract

According to one embodiment, a tungsten oxide material containing potassium is provided. The tungsten oxide material has a shape of particles including a central section and a peripheral section adjacent to the central section, and having an average particle size of 100 nm or less. A periodicity of a crystal varies between the central section and the peripheral section. In addition, a tungsten oxide powder mass for an electrochromic device including 80% by mass to 100% by mass of the tungsten oxide material is provided. Moreover, a slurry for producing an electrochromic device containing the above tungsten oxide material is provided.

First claim

What is claimed is:

1. A tungsten oxide material comprising potassium, the tungsten oxide material having a shape of particles including a central section and a peripheral section adjacent to the central section and having an average particle size of 100 nm or less, a periodicity of a crystal varying between the central section and the peripheral section;
wherein the tungsten oxide material has a crystal structure in which plural phases intersecting with a direction from inside toward a surface of the particles and being parallel to each other are sequentially arranged in the direction, and an interatomic distance Ic between the plural phases adjacent to each other in the central section is different from an interatomic distance Ip between the plural phases adjacent to each other in the peripheral section, and
wherein a ratio I p /I c of the interatomic distance I p to the interatomic distance I c is within a range of 1.1 to 3.

2. The tungsten oxide material according to claim 1 , wherein a content of the potassium is within a range of 1 mol % to 50 mol %.

3. The tungsten oxide material according to claim 2 , wherein a ratio K XPS /K ICP of a content K XPS of the potassium according to X-ray photoelectron spectroscopy to a content K ICP of the potassium according to an inductively coupled plasma emission spectrometric analysis method is 1.05 or more.

4. The tungsten oxide material according to claim 2 , wherein the peripheral section has a maximum width of 1.5 nm to 5 nm.

5. The tungsten oxide material according to claim 1 , wherein a ratio K XPS /K ICP of a content K XPS of the potassium according to X-ray photoelectron spectroscopy to a content K ICP of the potassium according to an inductively coupled plasma emission spectrometric analysis method is 1.05 or more.

6. The tungsten oxide material according to claim 1 , wherein the peripheral section has a maximum width of 1.5 nm to 5 nm.

7. The tungsten oxide material according to claim 1 , wherein the interatomic distance Ic is within a range of 2.8 Å to 3.9 Å.

8. A tungsten oxide powder mass for an electrochromic device, the tungsten oxide powder mass comprising 80% by mass to 100% by mass of the tungsten oxide material according to claim 1 .

9. A slurry for producing an electrochromic device, the slurry comprising the tungsten oxide material according to claim 1 .

Assignees

• Toshiba Kk
• Toshiba Materials Co Ltd

Inventors

• Fukushi Daisuke
• Saito Shuichi

Classifications

• C01P2006/60

  Optical properties, e.g. expressed in CIELAB-values · CPC title

• C01P2006/40

  Electric properties · CPC title

• C01P2004/64

  Nanometer sized, i.e. from 1-100 nanometer · CPC title

• C01P2002/85

  by XPS, EDX or EDAX data · CPC title

• C01P2002/78

  by stacking-plane distances or stacking sequences · CPC title