Use of heteroleptic indium hydroxides as precursors for INP nanocrystals

Patent metadata

Field	Value
Publication number	US-10029972-B2
Application number	US-201615348540-A
Country	US
Kind code	B2
Filing date	Nov 10, 2016
Priority date	Nov 13, 2015
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

The present invention is in the field of nanostructure synthesis. The present invention is directed to methods for producing nanostructures, particularly Group III-V semiconductor nanostructures. The present invention is also directed to preparing Group III inorganic compounds that can be used as precursors for nanostructure synthesis.

First claim

What is claimed is:

1. A method for preparing a compound of formula I:
X 1 —(O 2 CCH 3 ) 2 OH  (I)

wherein X 1 is B, Al, Ga, In, or Tl;

the method comprising:
(1) reacting:
X 1 —(O 2 CCH 3 ) 3-n (OH) n

wherein 0<n≤1; with an organic solvent and water; and
(2) drying at a temperature between about 10° C. and about 80° C.

2. The method of claim 1 , wherein 0<n<1.

3. The method of claim 1 , wherein the organic solvent is selected from the group consisting of methyl acetate, ethyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, acetone, methyl ethyl ketone, methyl isobutyl ketone, tetrahydrofuran, 2-methyltetrahydrofuran, acetonitrile, methyl t-butyl ether, diethyl ether, dibutyl ether, cyclopentyl methyl ether, anisole, toluene, xylene, heptanes, and mixtures thereof.

4. The method of claim 1 , wherein the temperature is between about 20° C. and about 60° C.

5. The method of claim 1 , wherein X 1 is In.

6. The method of claim 1 , wherein X 1 is In, the organic solvent is diethyl ether, the temperature is between about 35° C. and about 45° C., and the drying is for a time between about 1 hour and about about 15 hours.

7. A method of preparing a compound of formula III:
X 1 —(O 2 C(CH 2 ) b CH 3 ) 3-c (OH) c   (III)

wherein:
X 1 is B, Al, Ga, In, or Tl;
b is between 7 and 19; and
c is 1 or 2;

the method comprising reacting:
(1) a compound of formula IV:
X 1 —(OH) a (O 2 CCH 3 ) 3-a   (IV)

wherein:
X 1 is B, Al, Ga, In, or Tl; and
a is 1 or 2;

(2) with a compound of formula V:

wherein:
b is between 7 and 19.

8. The method of claim 7 , wherein X 1 is In.

9. The method of claim 7 , wherein c is 2.

10. The method of claim 7 , wherein b is between 7 and 12.

11. The method of claim 7 , wherein the molar ratio of the compound of formula (IV) to the compound of formula (V) is between about 1:2.0 to about 1:2.8.

12. The method of claim 7 , wherein X 1 is In, b is 10, c is 2, and wherein the molar ratio of the compound of formula (IV) to the compound of formula (V) is between about 1:2.0 to about 1:2.2.

13. A method for production of a Group III-V nanostructure, the method comprising:
(a) providing a Group III precursor prepared by the method of claim 7 ;
(b) providing a Group V precursor comprising a Group V atom; and

reacting the Group III and the Group V precursor to produce the nanostructure.

14. The method of claim 13 , wherein the Group V precursor comprises a Group V atom substituted with an acyl group.

15. The method of claim 13 , wherein the Group V precursor is a triacylphosphine.

16. The method of claim 13 , wherein the Group V precursor comprises a Group V atom substituted with three unsaturated groups.

17. The method of claim 13 , wherein the Group V precursor is tris(trimethylsilyl)phosphine.

18. A composition comprising:
a Group V precursor comprising a Group V atom;
a Group III precursor, wherein the Group III precursor is a compound of formula (III):
X 1 —(O 2 C(CH 2 ) b CH 3 ) 3-c (OH) c   (III)

wherein:
X 1 is B, Al, Ga, In, or Tl;
b is between 7 and 19; and
c is 1 or 2; and

one or more nanostructures comprising the Group III atom and the Group V atom.

19. The composition of claim 18 , wherein the Group V precursor comprises a tris(trialkylsilyl) substituted Group V atom.

20. The composition of claim 18 , wherein the Group V precursor is tris(trimethylsilyl)phosphine.

21. The composition of claim 18 , wherein X 1 is In.

22. The composition of claim 18 , wherein c is 2.

23. The composition of claim 18 , wherein b is between 7 and 12.

24. The composition of claim 18 , wherein X 1 is In, c is 2, and b is 10.

Assignees

• Nanosys Inc

Inventors

• Curley John J
• Slugocki Tim
• Hotz Charlie

Classifications

• H10P14/3418

  Phosphides · CPC title

• C09K11/0883

  Arsenides; Nitrides; Phosphides · CPC title

• C07F5/00

  Compounds containing elements of Groups 3 or 13 of the Periodic Table · CPC title

• C07F5/003 Primary

  without C-Metal linkages · CPC title

• C01B25/087

  of gallium or indium · CPC title