Display panel, manufacturing method thereof, and display device
US-11502133-B2 · Nov 15, 2022 · US
US12379798B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12379798-B2 |
| Application number | US-202117915920-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 18, 2021 |
| Priority date | Mar 31, 2020 |
| Publication date | Aug 5, 2025 |
| Grant date | Aug 5, 2025 |
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The present disclosure relates to display assemblies, display apparatus, and driving methods. One example display assembly includes a display panel and a function module located on a light-emitting surface of the display panel. A function unit in the function module includes at least one phototransistor and one switch transistor. The phototransistor includes a first active layer, a first gate, a first source, and a first drain. A material for making the first active layer includes an organic semiconductor material. The first active layer is located on a side of the first gate away from the display panel. The first drain and the first gate partially overlap to form a first capacitor. The switch transistor includes a second active layer, a second gate, a second source, and a second drain. The function unit includes a transparent electrode located on the first active layer and overlapping the first active layer.
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What is claimed is: 1. A display assembly, comprising a display panel and a function module located on a light-emitting surface of the display panel, wherein: the function module comprises a plurality of function units, and each function unit comprises at least one phototransistor and one switch transistor; the phototransistor comprises a first active layer, a first gate, a first source, and a first drain, a material for making the first active layer comprises an organic semiconductor material, the first active layer is located on a side of the first gate away from the display panel, and the first drain and the first gate partially overlap in a direction perpendicular to the display assembly to form a first capacitor; the switch transistor comprises a second active layer, a second gate, a second source, and a second drain, and the second source is connected to the first drain; and each function unit comprises a transparent electrode, the transparent electrode is located on a side of the first active layer away from the first gate, the transparent electrode overlaps the first active layer in the direction perpendicular to the display assembly, and a dielectric layer is disposed between the transparent electrode and the first active layer. 2. The display assembly according to claim 1 , wherein a thickness of the dielectric layer is d 1 , and 500 nm≤d 1 ≤1000 nm. 3. The display assembly according to claim 1 , wherein: the display assembly further comprises a planarization layer and a protective cover, the planarization layer is located on a side of the function module away from the display panel, and the protective cover is located on a side of the planarization layer away from the function module; and a sum of a thickness of the planarization layer on the top of the transparent electrode and a thickness of the protective cover is d 2 , and 300 nm≤d 2 ≤1.5 μm. 4. The display assembly according to claim 1 , wherein a material for making the dielectric layer comprises any one or more of silicon oxide, aluminum oxide, hafnium oxide, silicon nitride, poly(vinyl cinnamate), polyvinyl alcohol, and polymethyl methacrylate. 5. The display assembly according to claim 1 , wherein the function module comprises a first metal layer, and the first source, the first drain, the second source, and the second drain are all located at the first metal layer. 6. The display assembly according to claim 5 , wherein: the function module further comprises a second metal layer and a first insulation layer, the second metal layer is located on a side of the first metal layer close to the display panel, and the first insulation layer is located between the first metal layer and the second metal layer; and the first gate is located at the second metal layer. 7. The display assembly according to claim 6 , wherein both the first active layer and the second active layer are located on a side of the first insulation layer away from the second metal layer, and are in contact with the first insulation layer. 8. The display assembly according to claim 6 , wherein the first source is connected to the first gate through a via in the first insulation layer. 9. The display assembly according to claim 6 , wherein the second gate is located at the second metal layer. 10. The display assembly according to claim 9 , wherein the second active layer and the first active layer are made of a same material at a same layer. 11. The display assembly according to claim 10 , wherein the function unit further comprises a light shielding part, the light shielding part is located on a side of the second active layer away from the display panel, and an orthographic projection of the light shielding part on a plane on which the second active layer is located covers the second active layer. 12. The display assembly according to claim 1 , wherein the second gate is located on a side of the second active layer away from the display panel, and the dielectric layer is spaced between the second gate and the second active layer. 13. The display assembly according to claim 1 , wherein: the display panel comprises a plurality of pixel areas and a non-pixel area located between the adjacent pixel areas; and an orthographic projection of the function unit on the display panel is located in the non-pixel area. 14. The display assembly according to claim 2 , wherein the function module comprises a first metal layer, and the first source, the first drain, the second source, and the second drain are all located at the first metal layer. 15. The display assembly according to claim 3 , wherein the function module comprises a first metal layer, and the first source, the first drain, the second source, and the second drain are all located at the first metal layer. 16. The display assembly according to claim 4 , wherein the function module comprises a first metal layer, and the first source, the first drain, the second source, and the second drain are all located at the first metal layer. 17. The display assembly according to claim 2 , wherein the second gate is located on a side of the second active layer away from the display panel, and the dielectric layer is spaced between the second gate and the second active layer. 18. A display apparatus, comprising a display assembly, wherein the display assembly comprises a display panel and a function module located on a light-emitting surface of the display panel, and wherein: the function module comprises a plurality of function units, and each function unit comprises at least one phototransistor and one switch transistor; the phototransistor comprises a first active layer, a first gate, a first source, and a first drain, a material for making the first active layer comprises an organic semiconductor material, the first active layer is located on a side of the first gate away from the display panel, and the first drain and the first gate partially overlap in a direction perpendicular to the display assembly to form a first capacitor; the switch transistor comprises a second active layer, a second gate, a second source, and a second drain, and the second source is connected to the first drain; and each function unit comprises a transparent electrode, the transparent electrode is located on a side of the first active layer away from the first gate, the transparent electrode overlaps the first active layer in the direction perpendicular to the display assembly, and a dielectric layer is disposed between the transparent electrode and the first active layer. 19. A driving method for a display assembly, wherein the display assembly comprises a display panel and a function module located on a light-emitting surface of the display panel, and wherein: the function module comprises a plurality of function units, and each function unit comprises at least one phototransistor and one switch transistor; the phototransistor comprises a first active layer, a first gate, a first source, and a first drain, a material for making the first active layer comprises an organic semiconductor material, the first active layer is located on a side of the first gate away from the display panel, and the first drain and the first gate partially overlap in a direction perpendicular to the display assembly to form a first capacitor; the switch transistor comprises a second active layer, a second gate, a second source, and a second drain, and the second source is connected to the first drain; and each function unit comprises a transparent electrode, the transparent electrode is located on a sid
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