Display panel, manufacturing method thereof, and display device

Patent metadata

Field	Value
Publication number	US-11502133-B2
Application number	US-201916759197-A
Country	US
Kind code	B2
Filing date	Apr 25, 2019
Priority date	Apr 25, 2019
Publication date	Nov 15, 2022
Grant date	Nov 15, 2022

Abstract

The present disclosure provides a display panel, a manufacturing method thereof and a display device. The display panel includes a substrate, a pixel structure layer on the substrate, and a sensor layer on a side of the pixel structure layer away from the substrate. The pixel structure layer includes a plurality of sub-pixels. At least one of the plurality of sub-pixels is configured to emit a first light. The sensor layer includes a photoelectric conversion device. The photoelectric conversion device is configured to receive a second light produced after the first light is reflected by an external object, and convert the second light into an electrical signal.

First claim

What is claimed is:

1. A display panel, comprising:
a substrate;
a pixel structure layer on the substrate, wherein the pixel structure layer comprises a plurality of sub-pixels, at least one of which is configured to emit a first light; and
a sensor layer on a side of the pixel structure layer away from the substrate, wherein the sensor layer comprises a photoelectric conversion device configured to receive a second light produced after the first light is reflected by an external object and convert the second light into an electrical signal, wherein the photoelectric conversion device comprises an organic photoelectric triode, the organic photoelectric triode comprising a thin film transistor and an organic photoelectric structure electrically connected to the thin film transistor.

2. The display panel according to claim 1 , wherein:
the pixel structure layer further comprises a pixel defining layer;
each of the plurality of sub-pixels comprises a functional layer, wherein functional layers of different sub-pixels are spaced apart by the pixel defining layer; and
an orthographic projection of the photoelectric conversion device on the substrate is inside an orthographic projection of the pixel defining layer on the substrate.

3. The display panel according to claim 2 , wherein:
the plurality of sub-pixels comprise a green sub-pixel, and
the photoelectric conversion device is above a pixel defining layer adjacent to the functional layer of the green sub-pixel.

4. The display panel according to claim 1 , further comprising an encapsulation layer between the sensor layer and the pixel structure layer, wherein the thin film transistor comprises:
a gate;
a first insulating layer covering the gate;
a first organic semiconductor layer on the first insulating layer;
a first protective layer on the first organic semiconductor layer;
a source and a drain each connected to the first organic semiconductor layer, the source covering a portion of the first protective layer and a portion of the first organic semiconductor layer, and the drain covering another portion of the first protective layer and another portion of the first organic semiconductor layer;
a second insulating layer between the encapsulation layer and the gate; and
a third insulating layer on the source, the drain, and the first protective layer.

5. The display panel of claim 4 , wherein the organic photoelectric structure comprises:
a first electrode layer electrically connected to the source or the drain;
an organic photoelectric conversion layer on the first electrode layer; and
a second protective layer on the organic photoelectric conversion layer.

6. The display panel of claim 4 , wherein the sensor layer further comprises a touch device, the touch device comprising a touch electrode layer above the encapsulation layer, the touch electrode layer comprising a first touch electrode and a second touch electrode spaced apart from the first touch electrode, wherein:
the first touch electrode and the second touch electrode are both in a same layer as the gate; or
the first touch electrode is in a same layer as the gate, and the second touch electrode is above or below the first touch electrode.

7. The display panel according to claim 6 , wherein the touch device further comprises:
a fourth insulating layer on the encapsulation layer, the fourth insulating layer being in a same layer as the second insulating layer;
a fifth insulating layer on the fourth insulating layer, the fifth insulating layer being in a same layer as the first insulating layer;
a second organic semiconductor layer on the fifth insulating layer, the second organic semiconductor layer being in a same layer as the first organic semiconductor layer;
a third protective layer on the second organic semiconductor layer, the third protective layer being in a same layer as the first protective layer; and
a sixth insulating layer covering the third protective layer, the sixth insulating layer being in a same layer as the third insulating layer.

8. The display panel according to claim 4 , wherein the sensor layer further comprises a touch device, the touch device comprising a touch electrode layer above the encapsulation layer, the touch electrode layer comprising a first touch electrode and a second touch electrode spaced apart from the first touch electrode, wherein:
the first touch electrode and the second touch electrode are both in a same layer as the source and the drain; or
the first touch electrode is in a same layer as the source and the drain, and the second touch electrode is above or below the first touch electrode.

9. A display device, comprising: the display panel according to claim 1 .

10. A manufacturing method of a display panel, comprising:
forming a pixel structure layer on the substrate, wherein the pixel structure layer comprises a plurality of sub-pixels, at least one of which is configured to emit a first light; and
forming a sensor layer on a side of the pixel structure layer away from the substrate, wherein the sensor layer comprises a photoelectric conversion device configured to receive a second light produced after the first light is reflected by an external object and convert the second light into an electrical signal, wherein:
the photoelectric conversion device comprises an organic photoelectric triode, the organic photoelectric triode comprising a thin film transistor and an organic photoelectric structure electrically connected to the thin film transistor;
the sensor layer further comprises a touch device; and
the forming of the sensor layer comprises: forming the thin film transistor and the organic photoelectric structure of the organic photoelectric triode, and forming the touch device.

11. The manufacturing method according to claim 10 , further comprising forming an encapsulation layer on the pixel structure layer before forming the sensor layer, wherein the photoelectric conversion device is formed on a side of the encapsulation layer away from the pixel structure layer; and
the forming the thin film transistor of the organic photoelectric triode comprises:
forming a second insulating layer on the encapsulation layer;
forming a gate on the second insulating layer;
forming a first insulating layer covering the gate;
forming a first organic semiconductor layer on the first insulating layer;
forming a first protective layer on the first organic semiconductor layer;
forming a source and a drain each connected to the first organic semiconductor layer, the source covering a portion of the first protective layer and a portion of the first organic semiconductor layer, and the drain covering another portion of the first protective layer and another portion of the first organic semiconductor layer; and
forming a third insulating layer on the source, the drain, and the first protective layer.

12. The manufacturing method according to claim 11 , wherein the forming of the organic photoelectric structure of the organic photoelectric triode comprises:
forming a first electrode layer electrically connected to the source or the drain;
forming an organic photoelectric conversion layer on the first electrode layer; and
forming a second protective layer on the organic photoelectric conversion layer.

13. The manufacturing method according to claim 11 , wherein the forming of the touch device comprises forming a touch electrode layer above the encapsulation layer, the touch electrode layer comprising a first touch electrode and a second touch electrode spaced apart from the first touch electrode wherein:
the first touch electrode, the second touch electrode, and t

Assignees

• Chengdu Boe Optoelect Tech Co
• Boe Technology Group Co Ltd
• Beijing Boe Technology Dev Co Ltd

Inventors

• Wang Yang
• Tang Guoqiang
• Gai Renrong
• Wang Yangpeng

Classifications

• G06F2203/04103

  Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

• G06F3/0446

  using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• G06F3/0445

  using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer · CPC title

• G06F3/0443

  using a single layer of sensing electrodes · CPC title