Method for growing long-seed DKDP crystal by two-dimensional motion

Patent metadata

Field	Value
Publication number	US-12378690-B2
Application number	US-202318189054-A
Country	US
Kind code	B2
Filing date	Mar 23, 2023
Priority date	Mar 30, 2021
Publication date	Aug 5, 2025
Grant date	Aug 5, 2025

Abstract

A method for growing long-seed DKDP crystal by two-dimensional motion grows the crystal along the cylindrical surface, and there is no cylinder-cone interface with low optical quality, while avoiding three flow regions which are inevitable in the crystal growth process by rotating crystal method, including incident flow, side flow and wake flow, and easily cause inclusion formation. The long seed crystal moves periodically in the fresh solution, four cylindrical surfaces can achieve reversible shear flow in one cycle, and any point on the cylindrical surface experiences the same hydrodynamic conditions in one movement cycle, so that the solute supply is sufficient and uniform, the growth velocity is improved, and the stability of morphology is ensured. The method facilitates rapid growth of high quality DKDP crystals and provides a better solution for the large-size, high-quality DKDP crystal growth required by the ICF laser device.

First claim

We claim:

1. A method for growing a long-seed DKDP crystal by two-dimensional motion, comprising:
mounting a two-dimensional motion motor on an upper part of a growth tank and connecting a lower end of the two-dimensional motion motor to a connecting rod of a crystal carrying frame,
placing a long-seed DKDP crystal on the crystal carrying frame,
driving the crystal carrying frame with the long-seed DKDP crystal to periodically translating on a horizontal plane according to a square motion track in a growth solution in the growth tank by the two-dimensional motion motor in a motion mode, and
growing the long-seed DKDP crystal along all cylindrical surfaces in the growth tank to obtain a DKDP crystal with no quality restriction of a cylinder-cone interface until growth of the long-seed DKDP crystal ends,
wherein the motion mode is performing uniformly accelerated linear motion at an acceleration velocity a from 0—maintaining a uniform linear motion after a velocity reaches V—performing uniformly decelerated linear motion at an acceleration a until the velocity decreases to 0 on all four sides of the square motion track,
the accelerated velocity a of the uniformly accelerated linear motion is in a range of 0.01 to 1 m/s 2 , and the velocity V of the maintained uniformly linear motion is in a range of 0.01 to 1 m/s.

2. The method of claim 1 , wherein a length of each single side of the square motion track is in 50 mm, the accelerated velocity a of the uniformly accelerated linear motion is 0.01 m/s 2 , and the velocity V of the maintained uniformly linear motion is 0.01 m/s.

3. The method of claim 1 , wherein a length of each single side of the square motion track is 500 mm, the accelerated velocity a of the uniformly accelerated linear motion is 1 m/s 2 , and the velocity V of the maintained uniformly linear motion is 1 m/s.

4. The method of claim 1 , wherein a length of each single side of the square motion track in 500 mm, the accelerated velocity a of the uniformly accelerated linear motion is 0.01 m/s 2 , and the velocity V of the uniformly maintained linear motion is 0.1 m/s.

5. The method of claim 1 , wherein a cross-section of the growth tank is square.

Assignees

• Shanghai Inst Optics & Fine Mech Cas
• Univ Chongqing

Inventors

• Chen Duanyang
• Li Mingwei
• Qi Hongji
• Shao Jianda
• Wang Bin
• Liu Hang
• Yin Huawei
• Zhou Chuan

Classifications

• C30B29/16

  Oxides · CPC title

• C30B7/08

  by cooling of the solution · CPC title

• C30B29/14 Primary

  Phosphates · CPC title

• C30B7/00 Primary

  Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B9/00; by normal or gradient freezing C30B11/00; under a protective fluid C30B27/00) · CPC title