Pulsed laser deposition method

Patent metadata

Field	Value
Publication number	US-12378660-B2
Application number	US-202318516292-A
Country	US
Kind code	B2
Filing date	Nov 21, 2023
Priority date	Nov 28, 2022
Publication date	Aug 5, 2025
Grant date	Aug 5, 2025

Abstract

A pulsed laser deposition method is provided. The method includes emitting a plurality of groups of femtosecond pulses, focusing the plurality of groups of femtosecond pulses into a plurality of groups of femtosecond filaments by lenses, and cross-coupling the plurality of groups of femtosecond filaments to form n beams of plasma gratings; exciting a target material by using a first plasma grating; and adjusting angles of the lenses and time delay between a plurality of beams of femtosecond pulses; coupling and splicing a second plasma grating with the first plasma grating along a grating pattern of the first plasma grating, until a n th plasma grating is coupled and spliced with a (n−1) th plasma grating along a grating pattern of the (n−1) th plasma grating to form a plasma grating channel; and exciting the target material by using the plasma grating channel to complete deposition on a substrate.

First claim

What is claimed is:

1. A pulsed laser deposition method, comprising:
emitting a plurality of groups of femtosecond pulses, focusing the plurality of groups of femtosecond pulses into a plurality of groups of femtosecond filaments by lenses, and cross-coupling the plurality of groups of femtosecond filaments to form n beams of one-dimensional or two-dimensional plasma gratings, where n is a natural number greater than 1, wherein each group of femtosecond pulses comprises two or three beams of femtosecond pulses;
exciting a target material by using a first plasma grating in the n beams of one-dimensional or two-dimensional plasma gratings as a pre-pulse; and
adjusting angles of the lenses and time delay between a plurality of beams of femtosecond pulses: coupling and splicing a second plasma grating in the n beams of one-dimensional or two-dimensional plasma gratings with the first plasma grating along a grating pattern of the first plasma grating, and successively coupling and splicing a third plasma grating in the n beams of one-dimensional or two-dimensional plasma gratings with the second plasma grating along a grating pattern of the second plasma grating until a n th plasma grating is coupled and spliced with a (n−1) th plasma grating along a grating pattern of the (n−1) th plasma grating to form a plasma grating channel; and exciting the target material by using the plasma grating channel to complete deposition on a substrate.

2. The pulsed laser deposition method of claim 1 , wherein the femtosecond pulses have a laser energy of more than 0.5 mJ, a repetition frequency of 1 Hz to 1 MHz, and a pulse width of 5 to 1000 fs.

3. The pulsed laser deposition method of claim 1 , wherein an included angle between pulses in each group of femtosecond pulses is 5 to 20°, and included angles between pulses and the plasma grating channel are equal.

4. The pulsed laser deposition method of claim 3 , wherein an optical power density of the plasma grating is 8 to 12×10 13 W/cm 2 .

5. The pulsed laser deposition method of claim 1 , wherein a distance between the target material and the substrate is 2 to 5 mm.

6. The pulsed laser deposition method of claim 5 , wherein the time delay between femtosecond pulses is 50 to 100 ps.

7. The pulsed laser deposition method of claim 1 , wherein pulse delay between plasma gratings is 0 to 20 ps.

8. The pulsed laser deposition method of claim 7 , wherein the plasma gratings are coupled and spliced in such a way that two adjacent plasma gratings are coupled and spliced along grating stripes of each other to form the plasma grating channel.

9. The pulsed laser deposition method of claim 1 , wherein the deposition is completed by using a pulsed laser deposition apparatus, wherein the pulsed laser deposition apparatus comprises:
a femtosecond pulsed laser configured to emit laser;
a target material platform, on which the target material is placed;
a substrate platform, on which the substrate is placed; and
a plurality of mirrors and a plurality of focusing lenses configured for time delay.

Assignees

• Chongqing Huapu Information Tech Co Ltd
• Chongqing Huapu Quantum Tech Co Ltd
• Chongqing Huapu New Energy Co Ltd
• Chongqing Menghe Biotechnology Co Ltd
• Yunnan Huapu Quantum Mat Co Ltd
• Roi Optoelectronics Tech Co Ltd
• Guangdong Roi Optoelectronics Tech Co Ltd
• Chongqing Institute Of East China Normal Univ
• Univ East China Normal

Inventors

• Zeng Heping
• Hu Mengyun
• Qiao Yu

Classifications

• C23C14/542

  Controlling the film thickness or evaporation rate · CPC title

• C23C14/048

  using irradiation by energy or particles · CPC title

• C23C14/0635

  Carbides · CPC title

• C23C14/28 Primary

  by wave energy or particle radiation (C23C14/32 - C23C14/48 take precedence) · CPC title