Thin-film devices and fabrication

Patent metadata

Field	Value
Publication number	US-12370624-B2
Application number	US-202318491638-A
Country	US
Kind code	B2
Filing date	Oct 20, 2023
Priority date	Dec 12, 2011
Publication date	Jul 29, 2025
Grant date	Jul 29, 2025

Abstract

Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.

First claim

We claim:

1. A method of fabricating an electrochromic device comprising a first transparent conductor layer, an electrochromic stack, a second transparent conductor layer, and a vapor barrier layer and/or an encapsulation layer disposed, in order, on a substantially transparent substrate, the vapor barrier layer and/or the encapsulation layer disposed over the second transparent conductor layer, the method comprising:
punching through the vapor barrier layer and/or the encapsulation layer to form at least one hole down to, or into, the second transparent conductor layer; and
applying a bus bar material through the at least one hole to make electrical contact with the second transparent conductor layer,
wherein at least a portion of the second transparent conductor layer is disposed between the bus bar material and the substantially transparent substrate.

2. The method of claim 1 , wherein the electrochromic stack comprises an electrochromic layer and a counter electrode layer.

3. The method of claim 2 , wherein the electrochromic stack further comprises at least one defect mitigation insulating layer.

4. The method of claim 1 , wherein the at least one hole includes a plurality of holes that are spaced apart from each other along a side of the substantially transparent substrate.

5. The method of claim 1 , wherein the at least one hole is punched through using electromagnetic radiation.

6. The method of claim 5 , wherein the electromagnetic radiation has a wavelength of 248 nm, 355 nm, 1030 nm, 1064 nm, or 532 nm.

7. The method of claim 5 , wherein the electromagnetic radiation is laser radiation applied from a film side or from a substrate side.

8. The method of claim 1 , further comprising tapering an edge of the first transparent conductor layer.

9. An electrochromic device comprising:
a substantially transparent substrate;
a first transparent conductor layer disposed on the substantially transparent substrate;
an electrochromic stack disposed on the first transparent conductor layer;
a second transparent conductor layer disposed on the electrochromic stack;
a vapor barrier layer and/or an encapsulation layer disposed on the second transparent conductor layer;
at least one hole through the vapor barrier layer and/or the encapsulation layer down to, or into, the second transparent conductor layer; and
a bus bar material in the at least one hole configured to make electrical contact with the second transparent conductor layer,
wherein at least a portion of the second transparent conductor layer is disposed between the bus bar material and the substantially transparent substrate.

10. The electrochromic device of claim 9 , wherein the electrochromic stack comprises an electrochromic layer and a counter electrode layer.

11. The electrochromic device of claim 10 , wherein the electrochromic stack further comprises at least one defect mitigation insulating layer.

12. The electrochromic device of claim 9 , wherein the at least one hole includes a plurality of holes that are spaced apart from each other along a side of the substantially transparent substrate.

13. The electrochromic device of claim 9 , wherein the bus bar material is a conductive ink, a solder material, or a metal foil.

14. The electrochromic device of claim 9 , wherein the vapor barrier layer and/or the encapsulation layer comprises (I) one or more of an aluminum zinc oxide, a tin oxide, a silicon oxide, a silicon aluminum oxide, a silicon oxynitride, or a silicon dioxide or (II) an amorphous morphology, a crystalline morphology, or a mixed amorphous crystalline morphology.

15. The electrochromic device of claim 9 , wherein the first transparent conductor layer comprises a tapered edge.

Assignees

• View Inc
• View Operating Corp

Inventors

• Dixit Abhishek Anant
• Martin Todd William
• Pradhan Anshu A
• Strong Fabian
• Rozbicki Robert T

Classifications

• H10F39/103 Primary

  the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors · CPC title

• G02F1/1523

  comprising inorganic material · CPC title

• G02F1/155

  Electrodes · CPC title

• B23K2103/54

  Glass · CPC title

• B23K2101/40

  Semiconductor devices · CPC title