Defect-mitigation layers in electrochromic devices

Patent metadata

Field	Value
Publication number	US-9229291-B2
Application number	US-201514601141-A
Country	US
Kind code	B2
Filing date	Jan 20, 2015
Priority date	Sep 30, 2011
Publication date	Jan 5, 2016
Grant date	Jan 5, 2016

Abstract

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10 8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

First claim

What is claimed is:

1. An electrochromic device comprising:
a substrate;
a first electrode layer disposed on the substrate;
an electrochromic stack comprising an electrochromic layer of electrochromic material and a counter electrode layer of counter electrode material;
a second electrode layer disposed on the electrochromic stack;
a first defect-mitigating insulating layer comprising a substantially transparent and electronically insulating material disposed at (i) a location between an intermediate position within the electrochromic layer and the position of the electrode layer to which the electrochromic layer is in most direct electrical communication or (ii) a location between an intermediate position within the counter electrode layer and the position of the electrode layer to which the counter electrode layer is in the most direct electrical communication; and
a second defect-mitigating insulating layer comprising a substantially transparent and electronically insulating material disposed at (i) a location between an intermediate position within the electrochromic layer and the position of the electrode layer to which the electrochromic layer is in most direct electrical communication or (ii) a location between an intermediate position within the counter electrode layer and the position of the electrode layer to which the counter electrode layer is in the most direct electrical communication.

2. The electrochromic device of claim 1 , wherein at least one of the first and second defect-mitigating insulating layers is positioned proximate the first electrode layer.

3. The electrochromic device of claim 2 , wherein the first defect-mitigating insulating layer is positioned proximate the first electrode layer and the second defect-mitigating insulating layer is positioned proximate the second electrode layer.

4. The electrochromic device of claim 2 , wherein the first defect-mitigating insulating layer is positioned proximate the first electrode layer and the second defect-mitigating insulating layer is positioned at an intermediate position within either the counter electrode layer or the electrochromic layer, whichever is closer to the second electrode layer.

5. The electrochromic device of claim 4 , wherein the electrochromic layer is positioned proximate the second electrode layer, and wherein the second defect-mitigating insulating layer is positioned at an intermediate position within the electrochromic layer.

6. The electrochromic device of claim 4 , wherein the counter electrode layer is positioned proximate the second electrode layer, and wherein the second defect-mitigating insulating layer is positioned at an intermediate position within the counter electrode layer.

7. The electrochromic device of claim 1 , wherein the first defect-mitigating insulating layer is positioned at an intermediate position within the electrochromic layer and the second defect-mitigating insulating layer is positioned at an intermediate position within the counter electrode layer.

8. The electrochromic device of claim 1 , which:
a) is solid state and inorganic;
b) has an area of between about 20″×20″ and up to about 72″×120″; and
c) comprises fewer than about 0.04 pinhole defects, which are about 100 μm or larger along the largest transverse dimension of the pinholes, per square centimeter of the electrochromic device.

9. The electrochromic device of claim 1 , wherein at least one of the first and second defect-mitigating insulating layers has an electronic resistivity that is within an order of magnitude of the electrochromic material or the counter electrode material.

10. The electrochromic device of claim 1 , wherein a portion of either (i) the electrochromic layer, or (ii) the counter electrode layer comprises either the first or second defect-mitigating insulating layer, and wherein the portion has a composition that is a variant of the remainder of the electrochromic layer or the counter electrode layer.

11. The electrochromic device of claim 10 , wherein either the electrochromic layer or the counter electrode layer comprises a first portion and a second portion, wherein the first portion exhibits electrochromic properties and the second portion does not exhibit electrochromic properties, and wherein the second portion comprises either the first or second defect-mitigating insulating layer.

12. The electrochromic device of claim 1 , wherein (i) the counter electrode layer and (ii) either the first or second defect-mitigating insulating layer each comprise nickel tungsten oxide.

13. The electrochromic device of claim 12 , wherein the nickel tungsten oxide of the counter electrode layer is deposited using a first set of deposition conditions and the nickel tungsten oxide of the first or second defect-mitigating insulating layer is deposited using a second set of deposition conditions, the first set of deposition conditions being different than the second set of deposition conditions with respect to at least one variable selected from the group consisting of: pressure, oxygen concentration, power, and composition.

14. The electrochromic device of claim 13 , wherein the defect-mitigating insulating layer that comprises nickel tungsten oxide is positioned proximate the electrode to which the counter electrode layer is in the most direct electrical communication.

15. The electrochromic device of claim 1 , wherein the first and second defect-mitigating insulating layers do not physically contact one another.

16. A method of fabricating an electrochromic device, the method comprising:
forming an electrochromic layer comprising electrochromic material on a substrate which optionally comprises a first electrode layer and a first defect-mitigating insulating layer on the first electrode layer;
forming a counter electrode layer comprising counter electrode material, wherein the counter electrode layer is formed after the electrochromic layer is formed;
lithiating the counter electrode layer with lithium metal;
forming a second defect-mitigating insulating layer on the counter electrode layer; and
forming a second electrode layer after forming the defect-mitigating insulating layer.

17. The method of claim 16 , wherein the substrate comprises the first defect-mitigating insulating layer positioned on the first electrode layer such that the electrochromic layer forms on the first defect-mitigating insulating layer.

18. The method of claim 16 , further comprising depositing the first electrode layer and depositing the first defect-mitigating insulating layer.

19. The method of claim 16 , wherein forming the electrochromic layer comprises depositing an electrochromic material at a first composition and at a second composition, the second composition having a higher concentration of oxygen than the first composition, wherein the electrochromic material of the first composition is positioned proximate the first electrode layer and the electrochromic material of the second composition is positioned proximate the counter electrode layer.

20. The method of claim 16 , wherein the counter electrode layer and the second defect-mitigating insulating layer each comprise nickel tungsten oxide.

21. The method of claim 20 , wherein the nickel tungsten oxide of the counter electrode layer is deposited using a first set of deposition conditions and the nickel tungsten oxide of the second defect-mitigating insulating layer is deposited using a second set of deposition conditions, the first set of deposition conditions being dif

Assignees

• View Inc

Inventors

• Kailasam Sridhar K
• Friedman Robin
• Gillaspie Dane
• Pradhan Anshu A
• Rozbicki Robert
• Mehtani Disha

Classifications

• C23C14/081

  of aluminium, magnesium or beryllium · CPC title

• H01J37/3429

  Plural materials · CPC title

• C23C14/0676

  Oxynitrides · CPC title

• H01B5/14

  comprising conductive layers or films on insulating-supports · CPC title

• H01J37/3476

  Testing and control · CPC title