Display apparatus and manufacturing method of the same
US-11108006-B2 · Aug 31, 2021 · US
US12369397B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12369397-B2 |
| Application number | US-202117368721-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 6, 2021 |
| Priority date | Jul 30, 2020 |
| Publication date | Jul 22, 2025 |
| Grant date | Jul 22, 2025 |
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A display apparatus includes a substrate, a first pixel, a second pixel, a first wire set, and a second wire set. The first pixel and the second pixel overlap the substrate and neighbor each other in a first direction. The first wire set extends in a second direction, includes a first conduction line and a first transmission line, and may transfer a first data signal. The first conduction line is positioned between the substrate and the first transmission line and is connected through the first transmission line to the first pixel. The second wire set extends in the second direction, includes a second conduction line and a second transmission line, and may transfer a second data signal. The second conduction line is positioned between the substrate and the second transmission line and electrically connects the second transmission line to the second pixel.
Opening claim text (preview).
What is claimed is: 1. A display apparatus comprising: a substrate; a first pixel on the substrate and comprising a first thin film transistor, the first thin film transistor comprising a first semiconductor layer and a first gate electrode; a second pixel adjacent to the first pixel in a first direction, the second pixel being on the substrate and comprising a second thin film transistor, the second thin film transistor comprising a second semiconductor layer and a second gate electrode; a first data line positioned on the substrate, lengthwise in a second direction that is different from the first direction, including a first lower line and a first upper line, and transfers a first data signal to the first pixel, wherein the first lower line is positioned between the substrate and the first upper line, and the first upper line of the first data line transferring the first data signal to the first pixel is positioned directly on a first end of the first semiconductor layer of the first pixel; a first sub-lower layer including a same material as the first semiconductor layer and disposed on a same layer as the first semiconductor layer, wherein the first lower line of the first data line is in direct contact with the first sub-lower layer; a second data line positioned on the substrate, lengthwise in the second direction, including a second lower line and a second upper line, and transfers a second data signal to the second pixel, wherein the second lower line is positioned between the substrate and the second upper line; a second sub-lower layer integrally formed with an extending portion of the second semiconductor layer, wherein the second lower line of the second data line is in direct contact with the second sub-lower layer; and an interlayer insulating layer disposed between the second lower line and the second upper line. 2. The display apparatus of claim 1 , wherein the first semiconductor layer of the first thin film transistor is formed of an oxide semiconductor material. 3. The display apparatus of claim 2 , wherein the second semiconductor layer is formed of the oxide semiconductor material. 4. The display apparatus of claim 3 , further comprising a semiconductor member formed of the oxide semiconductor material, wherein the first lower line is positioned directly on the semiconductor member. 5. The display apparatus of claim 1 , wherein the first thin film transistor and the second thin film transistor are switching thin film transistors. 6. The display apparatus of claim 1 , wherein a material of the first lower line is identical to a material of the second lower line. 7. The display apparatus of claim 1 , wherein a material of the first upper line is identical to a material in the second upper line. 8. The display apparatus of claim 1 , wherein the second pixel further comprises: a third thin film transistor including a third semiconductor layer and a third gate electrode; and a bridge line electrically connected to each of the second thin film transistor and the third thin film transistor, wherein a first end of the bridge line overlaps the third semiconductor layer, and wherein a second end of the bridge line overlaps the second semiconductor layer. 9. The display apparatus of claim 8 , wherein the second end of the bridge line is electrically connected through the first end of the bridge line to the third gate electrode, and wherein the first end of the bridge line is electrically connected through the second end of the bridge line to the second semiconductor layer. 10. The display apparatus of claim 9 , wherein a conductive member is positioned directly on a second end of the second semiconductor layer, and wherein the second end of the bridge line is directly connected to the conductive member. 11. The display apparatus of claim 10 , wherein a material of the conductive member is identical to a material of the second lower line. 12. The display apparatus of claim 9 , wherein the second end of the bridge line is directly connected to the second semiconductor layer. 13. The display apparatus of claim 1 , further comprising a back metal layer between the substrate and the second semiconductor layer, the back metal layer overlapping the second semiconductor layer. 14. The display apparatus of claim 1 , further comprising: a back metal layer; and a driving voltage line electrically connected to the back metal layer, wherein the second pixel further comprises a third thin film transistor, wherein the third thin film transistor includes a third semiconductor layer and a third gate electrode, and wherein the back metal layer is positioned between the substrate and the third semiconductor and overlaps the third semiconductor layer. 15. The display apparatus of claim 1 , further comprising: a first gate insulating layer between the first semiconductor layer and the first gate electrode; and a second gate insulating layer between the second semiconductor layer and the second gate electrode, wherein a shape of the first gate insulating layer is identical to a shape of the first gate electrode, and wherein a shape of the second gate insulating layer is identical to a shape of the second gate electrode.
Manufacture or treatment · CPC title
Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title
comprising structures specially adapted for lowering the resistance · CPC title
Forming conductive regions or layers, e.g. electrodes · CPC title
using selective deposition, e.g. using a mask · CPC title
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