Semiconductor device

Patent metadata

Field	Value
Publication number	US-12364067-B2
Application number	US-202217860749-A
Country	US
Kind code	B2
Filing date	Jul 8, 2022
Priority date	Jul 9, 2021
Publication date	Jul 15, 2025
Grant date	Jul 15, 2025

Abstract

A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor stack comprising a first semiconductor structure, an active structure and a second semiconductor structure, wherein the first semiconductor structure includes a first surface, the first surface has a first area and comprising a first portion and a second portion;
a third semiconductor structure connected to the first portion and including a second surface with a second area;
a dielectric layer connected to the second portion, and comprising a plurality of openings having a third area; and
a reflecting layer located on one side of the third semiconductor structure opposite to the first semiconductor structure;
wherein a ratio of the second area of the third semiconductor structure to the first area of the first surface is in a range of 0.1 to 0.7, and a ratio of the third area of the openings to the first area of the first surface is less than 0.2.

2. The semiconductor device according to claim 1 , wherein the reflecting layer is filled in the openings to connect the third semiconductor structure.

3. The semiconductor device according to claim 1 , wherein the dielectric layer and the third semiconductor structure have the same thickness.

4. The semiconductor device according to claim 1 , further comprising a conductive structure filled in the openings to connect the third semiconductor structure.

5. The semiconductor device according to claim 4 , wherein the conductive structure is located between the third semiconductor structure and the dielectric layer, and the second surface of the third semiconductor structure contacts the conductive structure.

6. The semiconductor device according to claim 5 , wherein the conductive structure further contacts the first semiconductor structure, and a contacting area between the conductive structure and the first semiconductor structure is less than 10% of the first area.

7. The semiconductor device according to claim 4 , wherein the conductive structure has a fourth area, and the fourth area is substantially equal to the second area of the third semiconductor structure.

8. The semiconductor device according to claim 4 , wherein the conductive structure has a fourth area, and the fourth area is substantially equal to the third area of the openings.

9. The semiconductor device according to claim 4 , wherein the dielectric layer has a thickness substantially equal to a sum of thicknesses of the third semiconductor structure and the conductive structure.

10. The semiconductor device according to claim 4 , wherein the conductive structure is between the reflecting layer and the dielectric layer, and the reflecting layer and the dielectric layer are separated from each other.

11. The semiconductor device according to claim 4 , wherein the dielectric layer and the conductive structure respectively include a third surface and a fourth surface, and the third surface has a surface roughness smaller than that of the fourth surface.

12. The semiconductor device according to claim 1 , further comprising a conductive structure located between the first semiconductor structure and the dielectric layer.

13. The semiconductor device according to claim 1 , wherein the third semiconductor structure comprises a plurality of first parts separated from each other by a first distance, and the first distance is less than 20 μm.

14. The semiconductor device according to claim 1 , wherein the third semiconductor structure comprises a plurality of first parts and a plurality of second parts, and the first parts are connected by the second parts.

15. The semiconductor device according to claim 1 , further comprising a metal oxide layer, wherein the metal oxide layer is between the dielectric layer and the reflecting layer.

16. A semiconductor device, comprising:
a semiconductor stack comprising a first semiconductor structure, an active structure and a second semiconductor structure, wherein the first semiconductor structure includes a first surface, the first surface comprising a first portion and a second portion;
a third semiconductor structure connected to the first portion and including a plurality of first parts;
a dielectric layer connected to the second portion, and comprising a plurality of openings;
a reflecting layer located on one side of the third semiconductor structure opposite to the first semiconductor structure; and
a first transparent conductive layer located between the third semiconductor structure and the dielectric layer and connecting the third semiconductor structure;
wherein the first transparent conductive layer connects one of the first parts, and the first transparent conductive layer has a width smaller than that of the one of the first parts.

17. The semiconductor device according to claim 16 , further comprising a second transparent conductive layer located between the first transparent conductive layer and the reflecting layer, wherein the second transparent conductive layer connects the dielectric layer.

18. The semiconductor device according to claim 17 , wherein the reflecting layer fills the openings.

19. The semiconductor device according to claim 16 , further comprising a second transparent conductive layer located between the first transparent conductive layer and the reflecting layer, wherein the second transparent conductive layer fills the openings to connect the first transparent conductive layer.

20. The semiconductor device according to claim 19 , wherein the dielectric layer has a sidewall covered by the second transparent conductive layer.

Assignees

• Epistar Corp

Inventors

• Lin Chun-Yu
• Li jun-yi
• Chiu Yi-Yang
• Chang Chun-Wei
• Chen Yi-Ming
• Wu Chang-Hsiu
• Liao Wen-Luh
• Ou Chen
• Jheng Wei-Wun

Classifications

• H10H20/8316

  Multi-layer electrodes comprising at least one discontinuous layer · CPC title

• H10H20/833

  Transparent materials · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/82

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title