Optoelectronic device and the manufacturing method thereof

US10580937B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10580937-B2
Application numberUS-201816228575-A
CountryUS
Kind codeB2
Filing dateDec 20, 2018
Priority dateFeb 9, 2010
Publication dateMar 3, 2020
Grant dateMar 3, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

First claim

Opening claim text (preview).

What is claimed is: 1. An optoelectronic device comprising: a semiconductor structure having a first side and a second side opposite to the first side; a first pad at the first side; a first finger connected to the electrode pad and having a first width; an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface; a contact layer covering the bottom surface and the side surface. 2. The optoelectronic device of claim 1 , wherein the contact layer comprises a plurality of dots arranged in a two-dimensional array. 3. The optoelectronic device of claim 2 , wherein the plurality of dots substantially does not overlap with the first pad and the first finger in vertical direction. 4. The optoelectronic device of claim 2 , wherein the plurality of dots is separated to each other and formed of a semiconductor material. 5. The optoelectronic device of claim 1 , further comprising a second finger directly extending from the first pad. 6. The optoelectronic device of claim 5 , wherein the second finger is substantially parallel to the first finger in a top view of the optoelectronic device. 7. The optoelectronic device of claim 5 , wherein the contact layer comprises a first contact area and a second contact area which are between the first finger and the second finger. 8. The optoelectronic device of claim 5 , wherein the contact layer comprises a first contact area between the first finger and the second finger, and a distance between the first contact area and the second finger is between 10 μm and 30 μm. 9. The optoelectronic device of claim 7 , wherein the first contact area, the second contact area and both have a circular shape in a top view of the optoelectronic device. 10. The optoelectronic device of claim 7 , wherein the first contact area and the second contact area substantially do not overlap with the first pad and the first finger in a vertical direction. 11. The optoelectronic device of claim 5 , wherein the insulating layer further comprises a second part under the second finger. 12. The optoelectronic device of claim 11 , wherein the contact layer comprises a first contact area between the first part and a second part. 13. The optoelectronic device of claim 12 , wherein the first contact area has a third width smaller than the second width. 14. The optoelectronic device of claim 11 , wherein the insulating layer further comprises a third part between the first part and the second part, and the contact layer further comprises a second contact area between the second part and the third part. 15. The optoelectronic device of claim 1 , wherein the semiconductor structure comprises a window layer which has a roughened surface. 16. The optoelectronic device of claim 5 , wherein a distance between the second finger and the first finger is between 60 μm and 150 μm. 17. The optoelectronic device of claim 1 , further comprising a substrate having a first length and bonded to the contact layer. 18. The optoelectronic device of claim 17 , further comprising a second finger directly extending from the first pad, and a distance between the second finger and the first finger is between 5% and 15% of the first length. 19. The optoelectronic device of claim 17 , further comprising a second pad on the substrate. 20. The optoelectronic device of claim 17 , wherein the second width is between 0.8% and 8% of the first length.

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What does patent US10580937B2 cover?
An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the fi…
Who is the assignee on this patent?
Epistar Corp
What technology area does this patent fall under?
Primary CPC classification H01L33/387. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 03 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).