Method for preventing line bending during metal fill process

Patent metadata

Field	Value
Publication number	US-12362188-B2
Application number	US-202217662220-A
Country	US
Kind code	B2
Filing date	May 5, 2022
Priority date	Aug 16, 2016
Publication date	Jul 15, 2025
Grant date	Jul 15, 2025

Abstract

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

First claim

What is claimed is:

1. A method comprising:
providing a substrate having a dielectric surface to a chamber; and
exposing the substrate to pulses of a molybdenum-containing precursor and a continuous flow of a reactant to deposit an elemental molybdenum film directly on the dielectric surface, wherein the molybdenum film is deposited at a chamber pressure of less than 10 torr, wherein the reactant is a borane, a germane, a phosphine, or any combination thereof, and wherein the wherein the molybdenum-containing precursor is a molybdenum chloride.

2. The method of claim 1 , wherein the molybdenum-containing precursor is a molybdenum halide.

3. The method of claim 1 , wherein the reactant comprises hydrogen (H 2 ).

4. The method of claim 3 , wherein nitrogen is flowed with the H 2 .

5. The method of claim 1 , wherein the reactant is other than H 2 .

6. The method of claim 1 , wherein the substrate comprises a feature and the molybdenum film is deposited in the feature.

7. The method of claim 6 , wherein the molybdenum film fills the feature.

8. The method of claim 1 , wherein the molybdenum-containing precursor is adsorbed on the dielectric surface.

9. The method of claim 8 , wherein the reactant reacts with the molybdenum-containing precursor.

10. The method of claim 1 , wherein the reactant is adsorbed on the dielectric surface.

11. The method of claim 10 , wherein the molybdenum-containing precursor reacts with the adsorbed reactant.

12. The method of claim 1 , further comprising purging the chamber between the pulses of the molybdenum-containing precursor and the reactant.

13. The method of claim 1 , wherein the deposition of the molybdenum film comprises a self-limiting reaction.

14. The method of claim 1 , wherein the deposition of the molybdenum film is not self-limiting.

Assignees

• Lam Res Corp

Inventors

• Jandl Adam
• Ermez Sema
• Schloss Lawrence
• Gopinath Sanjay
• Danek Michal
• Neo Siew
• Collins Joshua
• Bamnolker Hanna

Classifications

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/089

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title