Solvent annealing of an organic planarization layer

Patent metadata

Field	Value
Publication number	US-12362168-B2
Application number	US-202117554738-A
Country	US
Kind code	B2
Filing date	Dec 17, 2021
Priority date	Dec 17, 2021
Publication date	Jul 15, 2025
Grant date	Jul 15, 2025

Abstract

A method for forming a planarization layer is provided that can include depositing an organic planarization layer on a deposition surface using a spin on deposition method; and treating the deposited organic planarization layer with a solvent anneal. In some embodiments, a vapor of solvent is passed over the deposited organic planarization layer to increase uniformity of the deposited organic planarization layer. The method may further include curing the deposited organic planarization layer with a thermal anneal.

First claim

What is claimed is:

1. A method for forming a planarization layer comprising:
depositing an organic planarization layer on a deposition surface using a spin on deposition method;
treating the deposited organic planarization layer with a solvent anneal, wherein a vapor of solvent is passed over the deposited organic planarization layer to increase uniformity of the deposited organic planarization layer; and
curing the deposited organic planarization layer with a thermal anneal.

2. The method of claim 1 , wherein a composition of the organic planarization layer is a C x H y polymer.

3. The method of claim 1 , wherein the organic planarization layer has a composition selected from the group consisting of polyacrylate resin, epoxy resin, phenol resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylenether resin, polyphenylenesulfide resin, benzocyclobutene (BCB) and combinations thereof.

4. The method of claim 1 further comprising an anneal to remove solvent from the organic planarization layer before the solvent anneal.

5. The method of claim 1 , wherein the anneal to remove the solvent from the organic planarization layer before the solvent annal has an anneal temperature ranging from 80° C. to 180° C.

6. The method of claim 1 , wherein the solvent anneal comprises producing the vapor of solvent by passing a carrier gas through a liquid solvent, and passing the vapor of solvent over the deposited organic planarization layer.

7. The method of claim 6 , wherein the liquid solvent has a solution selected from the group consisting of propylene glycol methyl ether acetate (PGMEA, I-methoxy-2-propanol acetate), ethyl acetate, benzene, toluene, acetone, tetrahydrofuran and combinations thereof.

8. The method of claim 6 , wherein the carrier gas has a composition selected from the group consisting of nitrogen (N 2 ), argon (Ar), helium (He) and combinations thereof.

9. The method of claim 1 , wherein a temperature of the solvent anneal ranges from 20° C. to 80° C.

10. The method of claim 1 , wherein the curing of the deposited organic planarization layer with the thermal anneal comprises a thermal anneal temperature that is greater than 200° C.

11. The method of claim 1 , wherein the solvent from the vapor of solvent is absorbed by the organic planarization layer and increases mobility of a material of the organic planarization layer.

Assignees

• IBM
• Screen Spe Usa Llc

Inventors

• Guo Jing
• Xu Wenyu
• Seshadri Indira
• Meli-Thompson Luciana
• Janes Dustin Wayne
• Fayad Jon
• Evans Eric
• Dipaola Domenico

Classifications

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10W74/134

  the encapsulations being in grooves in the semiconductor body · CPC title

• H10W74/137

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title

• H10P14/683 Primary

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10P72/0434

  mainly by convection · CPC title