Substrate processing apparatus and method
US-2018265974-A1 · Sep 20, 2018 · US
Substrate processing method and substrate processing apparatus
US12362156B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12362156-B2 |
| Application number | US-202017596129-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 26, 2020 |
| Priority date | Jun 7, 2019 |
| Publication date | Jul 15, 2025 |
| Grant date | Jul 15, 2025 |
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- Title
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Abstract
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A substrate processing method for performing a predetermined process on a substrate includes performing, a plurality of times, a cycle including (a) supplying a first processing gas into a processing container to which an exhaust pipe is connected and which accommodates the substrate and (b) supplying a second processing gas into the processing container, wherein at least one of (a) and (b) includes (c) introducing a ballast gas into the exhaust pipe and forming plasma of the processing gas supplied into the processing container.
First claim
Opening claim text (preview).
What is claimed is: 1. A substrate processing method for performing an Atomic Layer Deposition (ALD) process on a substrate, comprising: performing, a plurality of times, a cycle including (a) supplying a raw material gas as a first processing gas into a processing container to which an exhaust pipe is connected and which accommodates the substrate and (b) supplying a reaction gas as a second processing gas into the processing container, wherein (b) includes (c) introducing a ballast gas into the exhaust pipe to set a pressure in the processing container, forming plasma of the processing gas supplied into the processing container, and setting ratios of charged particles and neutral particles in the plasma of the processing gas contained in the processing container depending on an isotropically formed film or an anisotropically formed film. 2. The method of claim 1 , wherein the cycle includes supplying a replacement gas into the processing container to discharge the first processing gas after (a) and before (b), and supplying a replacement gas into the processing container to discharge the second processing gas after (b). 3. The method of claim 1 , wherein the pressure in the processing container in (b) is 1/2 or less or twice or more of a pressure in the processing container in (a). 4. The method of claim 3 , wherein a flow rate of the ballast gas in (c) is made different between the cycles, a pressure in the processing container in (c) is increased in one of the cycles, and the pressure in the processing container in (c) is lowered in another cycle. 5. The method of claim 1 , wherein a flow rate of the ballast gas in (c) is made different between the cycles, a pressure in the processing container in (c) is increased in one of the cycles, and the pressure in the processing container in (c) is lowered in another cycle.
Assignees
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Classifications
the material being a silicon oxide, e.g. SiO2 · CPC title
deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title
in the presence of a plasma [PECVD] · CPC title
of Group IV materials · CPC title
of insulating materials · CPC title
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- What does patent US12362156B2 cover?
- A substrate processing method for performing a predetermined process on a substrate includes performing, a plurality of times, a cycle including (a) supplying a first processing gas into a processing container to which an exhaust pipe is connected and which accommodates the substrate and (b) supplying a second processing gas into the processing container, wherein at least one of (a) and (b) inc…
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification C23C16/45536. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jul 15 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).