Method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-12360451-B2
Application number	US-202217696030-A
Country	US
Kind code	B2
Filing date	Mar 16, 2022
Priority date	Mar 19, 2021
Publication date	Jul 15, 2025
Grant date	Jul 15, 2025

Abstract

A method of manufacturing a semiconductor device, the method including forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule having a molecular weight of about 1,000 to about 4,000; exposing a partial region of the photoresist material layer; removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and processing the lower film using the photoresist pattern, wherein the crosslinking molecule includes a perfluoro alkyl moiety, the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule having a molecular weight of 1,000 to 4,000;
exposing a partial region of the photoresist material layer;
removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and
processing the lower film using the photoresist pattern,
wherein the crosslinking molecule includes a perfluoro alkyl moiety, the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer, wherein the photoresist material layer is free of photoacid generator.

2. The method as claimed in claim 1 , wherein:
the crosslinking molecule includes a compound represented by Formula 1, Formula 2, or Formula 3,

in Formulae 1 to 3,
M is tin (Sn), zinc (Zn), lithium (Li), sodium (Na), potassium (K), beryllium (Be), magnesium (Mg), calcium (Ca), barium (Ba), aluminum (Al), silicon (Si), cadmium (Cd), mercury (Hg), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), germanium (Ge), palladium (Pd), platinum (Pt), lead (Pb), strontium (Sr), or manganese (Mn), and
R and R f are each independently —C a F b H c (N,P) d (S,O) e , in which a is an integer of 1 to 20, d and e are each independently an integer of 0 to 5, c is an integer of 0 to 20, b≥(a+c), and (b+c)=2a+2+d.

3. The method as claimed in claim 2 , wherein:
the crosslinking molecule is represented by Formula 1, and
R is —C a F b H c (S,O) e , in which a is an integer of 5 to 10, e is an integer of 1 or 2 and c is an integer of 0 to 2.

4. The method as claimed in claim 2 , wherein
the crosslinking molecule is represented by Formula 2,
M is tin (Sn) or zinc (Zn),
R is —C a F b H c (S,O) e , in which a is an integer of 5 to 10, e is an integer of 1 or 2, and c is an integer of 0 to 2.

5. The method as claimed in claim 4 , wherein:
R is —CF 2 CHF—O—R′, and
R′ is —C 3 F 7 , —C 3 OF 7 , —C 4 F 9 , —C 4 OF 9 , —C 5 F 11 , —C 5 OF 11 , —C 6 F 13 , —C 6 OF 13 , —C 7 F 15 , or —C 7 OF 15 .

6. The method as claimed in claim 4 , wherein:
R is —CF 2 CHF—O—R′, and
R′ is —C m F 2m —O—C n F 2n+1 , m and n are each independently an integer of 1 to 6, and (m+n) is an integer of 3 to 7.

7. The method as claimed in claim 6 , wherein R is —CF 2 CHF—O—CF 2 C(CF 3 )F—O—(CF 2 ) 2 CF 3 or —CF 2 CHF—O—(CF 2 ) 3 —O—CF 3 .

8. The method as claimed in claim 2 , wherein:
the crosslinking molecule is represented by Formula 3, and
R f is —(CH 2 ) p (CF 2 ) q CF 3 , in which p is an integer of 0 to 3 and q is an integer of 2 to 9.

9. A method of manufacturing a semiconductor device, the method comprising:
forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule represented by Formula 1, Formula 2, or Formula 3;
exposing a partial region of the photoresist material layer;
removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and
processing the lower film using the photoresist pattern,

wherein, in Formulae 1 to 3,
M is tin (Sn), zinc (Zn), lithium (Li), sodium (Na), potassium (K), beryllium (Be), magnesium (Mg), calcium (Ca), barium (Ba), aluminum (Al), silicon (Si), cadmium (Cd), mercury (Hg), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), germanium (Ge), palladium (Pd), platinum (Pt), lead (Pb), strontium (Sr), or manganese (Mn), and
R and R f are each independently —C a F b H c (N,P) d (S,O) e , in which a is an integer of 1 to 20, each of d and e is independently an integer of 0 to 5, c is an integer of 0 to 20, b≥(a+c), and (b+c)=2a+2+d.

10. The method as claimed in claim 9 , wherein
the crosslinking molecule is represented by Formula 2,
M is tin (Sn) or zinc (Zn),
R is —C a F b H c (S,O) e , in which a is an integer of 5 to 10, e is an integer of 1 or 2, and c is an integer of 0 to 2.

11. The method as claimed in claim 10 , wherein:
R is —CF 2 CHF—O—R′, and
R′ is —C 3 F 7 , —C 3 OF 7 , —C 4 F 9 , —C 4 OF 9 , —C 5 F 11 , —C 5 OF 11 , —C 6 F 13 , —C 6 OF 13 , —C 7 F 15 , or —C 7 OF 15 .

12. The method as claimed in claim 10 , wherein:
R is —CF 2 CHF—O—R′, and
R′ is —C m F 2m —O—C n F 2n+1 , in which m and n are each independently an integer of 1 to 6, and (m+n) is an integer of 3 to 7.

13. The method as claimed in claim 12 , wherein R is —CF 2 CHF—O—CF 2 C(CF 3 )F—O—(CF 2 ) 2 CF 3 or —CF 2 CHF—O—(CF 2 ) 3 —O—CF 3 .

14. The method as claimed in claim 9 , wherein:
the crosslinking molecule is represented by Formula 1,
R is —C a F b H c (S,O) e , in which a is an integer of 5 to 10, e is 1 or 2, and c is an integer of 0 to 2.

15. The method as claimed in claim 14 , wherein:
R is —CF 2 CHF—O—R′,
R′ is —C m F 2m —O—C n F 2n+1 , in which each of m and n is an integer of 1 or more, and (m+n) is an integer of 3 to 7.

16. The method as claimed in claim 9 , wherein:
the crosslinking molecule is represented by Formula 3, and
R f is —(CH 2 ) p (CF 2 ) q CF 3 , in which p is an integer of 0 to 3, and q is an integer of 2 to 9.

17. The method as claimed in claim 9 , wherein:
the photoresist pattern includes a line-and-space pattern,
a pitch of the line-and-space pattern is 36 nm or less, and
a difference in width between two adjacent line patterns is 3 nm or less.

18. A method of manufacturing a semiconductor device, the method comprising:
forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule represented by Formula 1, Formula 2-1, Formula 2-2, or Formula 3-1;
exposing a partial region of the photoresist material layer;
baking the photoresist material layer;
removing an unexposed portion of the baked photoresist material layer to form a photoresist pattern; and
processing the lower film using the photoresist pattern,

wherein, in Formulae 1 to 3-1, R is —CF 2 CHF—O—R′, in which R′ is —C 3 F 7 , —C 3 OF 7 , —C 4 F 9 , —C 4 OF 9 , —C 5 F 11 , —C 5 OF 11 , —C 6 F 13 , —C 6 OF 13 , —C 7 F 15 , or —C 7 OF 15 , R f is —(CH 2 ) p (CF 2 ) q CF 3 , in which p is an integer of 0 to 3, and q is an integer of 2 to 9.

19. The method as claimed in claim 18 , wherein the crosslinking molecule is represented by Formula 1, Formula 2-1, or Formula 2-2.

20. The method as claimed in claim 18 , wherein the photoresist material layer including the crosslinking molecule does not include a photoacid generator (PAG).

Assignees

• Samsung Electronics Co Ltd
• Inha Ind Partnership Inst

Inventors

• Koh Chawon
• Nishi Tsunehiro
• Kim Hyunwoo
• Lee Jinkyun
• Kim Junil
• Oh Hyuntaek
• Woo Jihoon
• Choi Seungsoo

Classifications

• G03F7/2006

  using coherent light; using polarised light · CPC title

• G03F7/325

  Non-aqueous compositions · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/26

  Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title