Photoelectric detection circuit and driving method therefor, and detection substrate and ray detector

Patent metadata

Field	Value
Publication number	US-12360261-B2
Application number	US-202117921589-A
Country	US
Kind code	B2
Filing date	May 25, 2021
Priority date	Jun 3, 2020
Publication date	Jul 15, 2025
Grant date	Jul 15, 2025

Abstract

A photoelectric detection circuit and a driving method therefor, and a detection substrate and a ray detector. The photoelectric detection circuit includes a storage circuit ( 101 ), an amplification circuit ( 102 ), a first reading circuit ( 103 ) and a second reading circuit ( 104 ), where the storage circuit ( 101 ), the amplification circuit ( 102 ) and the first reading circuit ( 103 ) cooperate with one another to realize a photoelectric detection function in an active mode; and the storage circuit ( 101 ) and the second reading circuit ( 104 ) cooperate with each other to realize a photoelectric detection function in a passive mode.

First claim

What is claimed is:

1. A detection substrate, comprising:
a base substrate;
photoelectric detection circuits arranged on the base substrate in an array; and
photoelectric sensors arranged on sides, facing away from the base substrate, of the photoelectric detection circuits and coupled with the photoelectric detection circuits in a one-to-one correspondence mode;
wherein the photoelectric detection circuit comprises:
a storage circuit, coupled with an output end of a photoelectric sensor; wherein the storage circuit is configured to store a first photocurrent signal generated by the photoelectric sensor according to a received ray with a first radiation dosage, and store a second photocurrent signal generated by the photoelectric sensor according to a received ray with a second radiation dosage, and the first radiation dosage of the ray is smaller than the second radiation dosage of the ray;
an amplification circuit, coupled with the storage circuit; wherein the amplification circuit is configured to amplify and then output the first photocurrent signal written;
a first reading circuit, coupled with an output end of the amplification circuit and a detection signal receiving end respectively; wherein the first reading circuit is configured to write, under a control of a first scanning signal end, the first photocurrent signal amplified by the amplification circuit into the detection signal receiving end; and
a second reading circuit, coupled with the storage circuit and the detection signal receiving end receptively; wherein the second reading circuit is configured to write, under a control of a second scanning signal end, the second photocurrent signal into the detection signal receiving end;

wherein each of the photoelectric sensors comprises: a first electrode coupled with a corresponding photoelectric detection circuit; a second electrode arranged on the same layer as the first electrode; a dielectric layer arranged on a side, facing away from the base substrate, of the layer where the first electrode and the second electrode are arranged; and a semiconductor layer arranged on a side, facing away from the base substrate, of the dielectric layer; wherein the first electrode and the second electrode constitute an interdigital electrode.

2. The detection substrate according to claim 1 , wherein the detection signal receiving end is unique.

3. The detection substrate according to claim 1 , wherein the detection signal receiving end comprises a first detection signal end and a second detection signal end;
the first detection signal end is coupled with the first reading circuit; and
the second detection signal end is coupled with the second reading circuit.

4. The detection substrate according to claim 1 , wherein the storage circuit comprises a capacitor, one end of the capacitor is grounded, and the other end of the capacitor is coupled with the output end of the photoelectric sensor.

5. The detection substrate according to claim 1 , wherein the amplification circuit comprises a first transistor, a gate of the first transistor is coupled with the output end of the photoelectric sensor, and a first electrode of the first transistor is coupled with a first power end.

6. The detection substrate according to claim 5 , wherein the first reading circuit comprises a second transistor;
wherein a gate of the second transistor is coupled with the first scanning signal end, a first electrode of the second transistor is coupled with a second electrode of the first transistor, and the second electrode of the second transistor is coupled with the detection signal receiving end.

7. The detection substrate according to claim 1 , wherein, the second reading circuit comprises a third transistor;
wherein a gate of the third transistor is coupled with the second scanning signal end, a first electrode of the third transistor is coupled with the output end of the photoelectric sensor, and the second electrode of the third transistor is coupled with the detection signal receiving end.

8. The detection substrate according to claim 1 , further comprising: a reset circuit;
wherein the reset circuit is coupled with the output end of the photoelectric sensor; and
the reset circuit is configured to reset, under a control of a third scanning signal end, the output end of the photoelectric sensor by using a second power end.

9. The detection substrate according to claim 8 , wherein the reset circuit comprises a fourth transistor;
wherein a gate of the fourth transistor is coupled with the third scanning signal end, a first electrode of the fourth transistor is coupled with the second power end, and the second electrode of the fourth transistor is coupled with the output end of the photoelectric sensor.

10. A driving method of the detection substrate according to claim 1 , comprising:
in an accumulating period, when the ray with the first radiation dosage is applied to the photoelectric sensor, storing the first photocurrent signal generated by the photoelectric sensor according to the ray with the first radiation dosage through the storage circuit; when the ray with the second radiation dosage is applied to the photoelectric sensor, storing the second photocurrent signal generated by the photoelectric sensor according to the ray with the second radiation dosage through the storage circuit; wherein the first radiation dosage of the ray is smaller than the second radiation dosage of the ray; and
in a reading period, when the storage circuit stores the first photocurrent signal, loading the first scanning signal to the first scanning signal end, so that the first reading circuit writes the first photocurrent signal amplified by the amplification circuit into the detection signal receiving end; and when the storage circuit stores the second photocurrent signal, loading the second scanning signal to the second scanning signal end, so that the second reading circuit writes the second photocurrent signal stored by the storage circuit into the detection signal receiving end.

11. The driving method according to claim 10 , wherein, before the accumulating period, further comprising:
in a reset period, loading a third scanning signal to a third scanning signal end, so that a reset circuit resets the output end of the photoelectric sensor by using a second power end.

12. The detection substrate according to claim 1 , wherein same film layers with same function of transistors comprised in each of the photoelectric detection circuits are arranged on the same layer;
one end of a capacitor and a gate of at least one of the transistors are arranged on the same layer, and the other end of the capacitor is arranged on the same layer as a first electrode and a second electrode of at least one of the transistors.

13. The detection substrate according to claim 12 , wherein each of the photoelectric sensors comprises:
a first electrode coupled with a corresponding photoelectric detection circuit;
a second electrode arranged on a side, facing away from the base substrate, of the first electrode; and
a P-type semiconductor layer, an intrinsic semiconductor layer and an N-type semiconductor layer stacked between the first electrode and the second electrode.

14. A ray detector, comprising the detection substrate according to claim 1 .

Assignees

• Boe Technology Group Co Ltd

Inventors

• Chen Jiangbo
• Meng Fanli
• Sun tuo
• Li Zeyuan
• Duan Liye

Classifications

• H10F39/1892 Primary

  Direct radiation image sensors · CPC title

• G01T1/247

  Detector read-out circuitry (for processing gain or off-set correction H04N) · CPC title

• H10F39/803

  Pixels having integrated switching, control, storage or amplification elements · CPC title

• G01T1/20

  with scintillation detectors · CPC title

• H10F39/1898

  Indirect radiation image sensors, e.g. using luminescent members · CPC title