Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same

Patent metadata

Field	Value
Publication number	US-12356873-B2
Application number	US-202117322548-A
Country	US
Kind code	B2
Filing date	May 17, 2021
Priority date	May 18, 2020
Publication date	Jul 8, 2025
Grant date	Jul 8, 2025

Abstract

Disclosed is a method of forming a chalcogenide-based thin film using an atomic layer deposition (ALD) process including forming a Ge—Te-based material, the forming of the Ge—Te-based material may include a first operation of supplying, into a reaction chamber provided with a substrate, a first source gas including a Ge precursor with Ge having an oxidation state of +2, a second operation of supplying a first purge gas into the reaction chamber, a third operation of supplying, into the reaction chamber, a second source gas including a Te precursor and a first co-reactant gas for promoting a reaction between the Ge precursor and the Te precursor, and a fourth operation of supplying a second purge gas into the reaction chamber.

First claim

What is claimed is:

1. A method of forming a chalcogenide-based thin film using an atomic layer deposition (ALD) process, the method comprising:
forming a Ge—Te-based material,
wherein the forming of the Ge—Te-based material comprises:
a first operation of supplying, into a reaction chamber provided with a substrate, a first source gas including a Ge precursor with Ge having an oxidation state of +2;
a second operation of supplying a first purge gas into the reaction chamber;
a third operation of supplying, into the reaction chamber, a second source gas including a Te precursor and a first co-reactant gas for promoting a reaction as a catalyst between the Ge precursor and the Te precursor; and
a fourth operation of supplying a second purge gas into the reaction chamber,
wherein the second source gas and the first co-reactant gas are simultaneously supplied into the reaction chamber, and the first co-reactant gas includes NH 3 .

2. The method of claim 1 , wherein the Ge precursor includes Ge(II)-amido guanidinate.

3. The method of claim 1 , wherein the first co-reactant gas is configured to react with the Te precursor to generate TeH 2 .

4. The method of claim 1 , wherein the Te precursor includes Te(SiMe 3 ) 2 .

5. The method of claim 1 , wherein in the forming of the Ge—Te-based material, a deposition temperature is in a range of 70° C. to 200° C.

6. The method of claim 1 , further comprising:
forming a Sb—Te-based material,
wherein the forming of the Sb—Te-based material comprises:
a fifth operation of supplying, into the reaction chamber, a third source gas including a Sb precursor;
a sixth operation of supplying a third purge gas into the reaction chamber;
a seventh operation of supplying, into the reaction chamber, the fourth source gas including a second Te precursor and a second co-reactant gas; and
an eighth operation of supplying a fourth purge gas into the reaction chamber.

7. The method of claim 6 , wherein the fourth source gas is the same as the second source gas, the second co-reactant gas is the same as the first co-reactant gas, and the fourth source gas and the second co-reactant gas are simultaneously supplied into the reaction chamber.

8. The method of claim 6 ,
wherein the forming of the Ge—Te-based material is configured to form a GeTe material, and the forming of the Sb—Te-based material is configured to form a Sb 2 Te 3 material,
wherein the first to fourth operations for forming the Ge—Te-based material are repeatedly performed m times (m is an integer of 1 or more), and the fifth to eighth operations for forming the Sb—Te-based material are repeatedly performed n times (n is an integer of 1 or more),
wherein he forming of the Ge—Te-based material and the forming of the Sb—Te-based material are alternately and repeatedly performed.

9. A method of forming a phase change material layer, comprising:
forming a chalcogenide-based thin film by using the method of claim 1 .

10. A method of manufacturing a phase change memory device, comprising:
forming a phase change material layer by using the method of claim 9 ; and
forming an electrode structure for applying a voltage to the phase change material layer.

Assignees

• Seoul Nat Univ R&Db Foundation
• Seoul National Univ R&Dbfoundation

Inventors

• Hwang Cheol Seong
• Ha Manick

Classifications

• H10N70/8828

  Tellurides, e.g. GeSbTe · CPC title

• H10N70/231

  based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect · CPC title

• H10N70/041

  Modification of switching materials after formation, e.g. doping (shaping H10N70/061) · CPC title

• H10B63/24

  of the Ovonic threshold switching type · CPC title

• C23C16/56

  After-treatment · CPC title