Wafer processing method

Patent metadata

Field	Value
Publication number	US-12354902-B2
Application number	US-202217659103-A
Country	US
Kind code	B2
Filing date	Apr 13, 2022
Priority date	May 11, 2021
Publication date	Jul 8, 2025
Grant date	Jul 8, 2025

Abstract

A wafer processing method includes an affixing step of affixing a wafer to a sheet via a die attach layer having a diameter larger than a diameter of the wafer, to thereby form a protruding portion of the die attach layer on a periphery of the wafer, and a protruding portion removing step of removing the protruding portion from the sheet by bringing a removing member into contact with the protruding portion.

First claim

What is claimed is:

1. A wafer processing method comprising:
an affixing step of affixing a wafer to a sheet via a die attach layer having a diameter larger than a diameter of the wafer, to thereby form a protruding portion of the die attach layer on a periphery of the wafer;
a protruding portion removing step of removing the protruding portion from the sheet by bringing a removing member into contact with the protruding portion; and
an expanding step of expanding the sheet in a state in which the protruding portion has been removed from the sheet.

2. The wafer processing method according to claim 1 , wherein;
the removing member is formed by a tape having an adhesive layer laminated on a base material.

3. The wafer processing method according to claim 2 , further comprising:
a removing unit preparing step of preparing a removing unit including a first annular frame having an opening formed at a center thereof, the removing member covering the opening, and a protective layer formed on the removing member at a position corresponding to the wafer inside the opening,
wherein the protruding portion removing step removes the protruding portion by bringing the adhesive layer of the removing member into contact with the protruding portion while making the protective layer of the removing unit face the wafer.

4. The wafer processing method according to claim 1 , further comprising:
a division starting point forming step of forming, inside the wafer, division starting points to be used to divide the die attach layer, before or after the affixing step,
wherein, in the expanding step, the sheet is expanded in a state in which the division starting points have been formed inside the wafer and the protruding portion has been removed from the sheet, to thereby be formed a plurality of chips to each of which the die attach layer is laminated.

5. The wafer processing method according to claim 3 , wherein:
the sheet to which the wafer is affixed is fixed to a second annular frame for holding the wafer,
a positioning portion is formed in each of the second annular frame for holding the wafer and the first annular frame of the removing unit, and,
in the protruding portion removing step, the position of the protective layer is made to coincide with the position of the wafer by aligning the positioning portions of the first and second annular frames with each other.

6. The wafer processing method according to claim 1 , wherein a surface of the tubular member which contacts the protruding portion is made of a material which adheres to the protruding portion.

7. A wafer processing method comprising:
an affixing step of affixing a wafer to a sheet via a die attach layer having a diameter larger than a diameter of the wafer, to thereby form a protruding portion of the die attach layer on a periphery of the wafer; and
a protruding portion removing step of removing the protruding portion from the sheet by bringing a removing member, which is formed by a tape having an adhesive layer laminated on a base material, into contact with the protruding portion.

8. The wafer processing method according to claim 7 , further comprising:
a removing unit preparing step of preparing a removing unit including a first annular frame having an opening formed at a center thereof, the removing member covering the opening, and a protective layer formed on the removing member at a position corresponding to the wafer inside the opening,
wherein the protruding portion removing step removes the protruding portion by bringing the adhesive layer of the removing member into contact with the protruding portion while making the protective layer of the removing unit face the wafer.

9. A wafer processing method comprising:
an affixing step of affixing a wafer to a sheet via a die attach layer having a diameter larger than a diameter of the wafer, to thereby form a protruding portion of the die attach layer on a periphery of the wafer;
a protruding portion removing step of removing the protruding portion from the sheet by bringing a removing member into contact with the protruding portion;
a division starting point forming step of forming, inside the wafer, division starting points to be used to divide the die attach layer, before or after the affixing step; and
an expanding step of expanding the sheet in a state in which the division starting points have been formed inside the wafer and the protruding portion has been removed from the sheet, to thereby form a plurality of chips to each of which the die attach layer is laminated.

10. The wafer processing method according to claim 9 , wherein:
the sheet to which the wafer is affixed is fixed to a second annular frame for holding the wafer,
a positioning portion is formed in each of the second annular frame for holding the wafer and the first annular frame of the removing unit, and,
in the protruding portion removing step, the position of the protective layer is made to coincide with the position of the wafer by aligning the positioning portions of the first and second annular frames with each other.

Assignees

• Disco Corp

Inventors

• Zhao Jinyan
• Harada Shigenori

Classifications

• H10P72/742

  involving stretching of the auxiliary support post dicing · CPC title

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P72/7402 Primary

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/0442 Primary

  Apparatus for placing on an insulating substrate, e.g. tape · CPC title